Краткое содержание страницы № 1
PRELIMINARY CY7C1336H
2-Mbit (64K x 32) Flow-Through Sync SRAM
[1]
Features Functional Description
The CY7C1336H is a 64K x 32 synchronous cache RAM
• 64K x 32 common I/O
designed to interface with high-speed microprocessors with
• 3.3V core power supply
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
• 3.3V I/O supply
first address in a burst and increments the address automati-
• Fast clock-to-output times
cally for t
Краткое содержание страницы № 2
PRELIMINARY CY7C1336H Selection Guide 133 MHz 100 MHz Unit Maximum Access Time 6.5 8.0 ns Maximum Operating Current 225 205 mA Maximum Standby Current 40 40 mA Pin Configuration 100-pin TQFP Pinout NC 1 80 NC DQ 2 C 79 DQ B DQ 3 DQ C 78 B V 4 V DDQ 77 DDQ V 5 V SSQ 76 SSQ DQ 6 C 75 DQ B DQ 7 C 74 DQ B DQ 8 BYTE C C 73 DQ BYTE B B DQ 9 C 72 DQ B V 10 SSQ 71 V SSQ V 11 DDQ 70 V DDQ DQ 12 C 69 DQ B DQ 13 C 68 DQ B NC 14 67 V SS CY7C1336H V 15 NC DD 66 NC 16 65 V DD V 17 ZZ SS 64 DQ 18 DQ D 63 A D
Краткое содержание страницы № 3
PRELIMINARY CY7C1336H Pin Definitions Name I/O Description A0, A1, Input- Address Inputs used to select one of the 64K address locations. Sampled at the rising edge of the A Synchronous CLK if ADSP or ADSC is active LOW, and CE , CE , and CE are sampled active. A feed the 2-bit 1 2 3 [1:0] counter. BW , Input- Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM. A Synchronous Sampled on the rising edge of CLK. BW B BW , C BW D GW Input- Global Write
Краткое содержание страницы № 4
PRELIMINARY CY7C1336H indicate a write access. ADSC is ignored if ADSP is active Functional Overview LOW. All synchronous inputs pass through input registers controlled The addresses presented are loaded into the address register by the rising edge of the clock. Maximum access delay from and the burst counter/control logic and delivered to the the clock rise (t ) is 6.5 ns (133-MHz device). CDV memory core. The information presented to DQ will be [D:A] The CY7C1336H supports secondary cache in
Краткое содержание страницы № 5
PRELIMINARY CY7C1336H ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min. Max. Unit I Sleep mode standby current ZZ > V – 0.2V 40 mA DDZZ DD t Device operation to ZZ ZZ > V – 0.2V 2t ns ZZS DD CYC t ZZ recovery time ZZ < 0.2V 2t ns ZZREC CYC t ZZ Active to sleep current This parameter is sampled 2t ns ZZI CYC t ZZ Inactive to exit sleep current This parameter is sampled 0 ns RZZI [2, 3, 4, 5, 6] Truth Table ADDRESS Cycle Description Used CE CE CE ZZ ADSP ADSC ADV WRITE
Краткое содержание страницы № 6
PRELIMINARY CY7C1336H [2, 3] Truth Table for Read/Write Function GW BWE BW BW BW BW D C B A Read H H XXXX Read H L HHHH Write Byte (A, DQP) H L HHH L A Write Byte (B, DQP)HLHHLH B Write Bytes (B, A, DQP , DQP)H L H H L L A B Write Byte (C, DQP) H LH LH H C Write Bytes (C, A, DQP , DQP) H LH LH L C A Write Bytes (C, B, DQP , DQP)H L H L L H C B Write Bytes (C, B, A, DQP , DQP , DQP) H L H LLL C B A Write Byte (D, DQP) H L L HHH D Write Bytes (D, A, DQP , DQP)H L L H H L D A Write Bytes (D, B, DQP
Краткое содержание страницы № 7
PRELIMINARY CY7C1336H Current into Outputs (LOW)......................................... 20 mA Maximum Ratings Static Discharge Voltage........................................... >2001V (Above which the useful life may be impaired. For user guide- (per MIL-STD-883, Method 3015) lines, not tested.) Latch-up Current..................................................... >200 mA Storage Temperature .................................–65°C to +150°C Operating Range Ambient Temperature with Power Applie
Краткое содержание страницы № 8
PRELIMINARY CY7C1336H [9] Capacitance 100 TQFP Parameter Description Test Conditions Max. Unit C Input Capacitance T = 25°C, f = 1 MHz, 5pF IN A V = 3.3V, V = 3.3V DD DDQ C Clock Input Capacitance 5 pF CLK C Input/Output Capacitance 5 pF I/O [9] Thermal Resistance 100 TQFP Parameter Description Test Conditions Package Unit Θ Thermal Resistance Test conditions follow standard test 30.32 °C/W JA (Junction to Ambient) methods and procedures for measuring thermal impedance, per Θ Thermal Resistan
Краткое содержание страницы № 9
PRELIMINARY CY7C1336H [10, 11] Switching Characteristics Over the Operating Range 133 MHz 100 MHz Parameter Description Min. Max. Min. Max. Unit [12] t V (Typical) to the First Access 1 1 ms POWER DD Clock t Clock Cycle Time 7.5 10 ns CYC t Clock HIGH 2.5 4.0 ns CH t Clock LOW 2.5 4.0 ns CL Output Times t Data Output Valid after CLK Rise 6.5 8.0 ns CDV t Data Output Hold after CLK Rise 2.0 2.0 ns DOH [13, 14, 15] t Clock to Low-Z 0 0 ns CLZ [13, 14, 15] t Clock to High-Z 3.5 3.5 ns CHZ t OE L
Краткое содержание страницы № 10
PRELIMINARY CY7C1336H Timing Diagrams [16] Read Cycle Timing t CYC CLK t t CL CH t t ADS ADH ADSP t t ADS ADH ADSC t t AS AH ADDRESS A1 A2 t t WES WEH GW, BWE,BW [A:D] Deselect Cycle t t CES CEH CE t t ADVS ADVH ADV ADV suspends burst. OE t t t CDV OEV OELZ t t OEHZ CHZ t DOH t CLZ Q(A2) Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) Data Out (Q) Q(A1) High-Z t CDV Burst wraps around to its initial state Single READ BURST READ DON’T CARE UNDEFINED Note: 16. On this diagram, when CE is
Краткое содержание страницы № 11
PRELIMINARY CY7C1336H Timing Diagrams (continued) [16, 17] Write Cycle Timing t CYC CLK t t CL CH t t ADH ADS ADSP ADSC extends burst. t t ADS ADH t t ADH ADS ADSC t t AS AH ADDRESS A1 A2 A3 Byte write signals are ignored for first cycle when ADSP initiates burst. t t WEH WES BWE, BW[A:D] t t WES WEH GW t t CEH CES CE t t ADVS ADVH ADV ADV suspends burst. OE t t DH DS D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) Data in (D) D(A1) High-Z t OEHZ Data Out (Q) BURST
Краткое содержание страницы № 12
PRELIMINARY CY7C1336H Timing Diagrams (continued) [16, 18, 19] Read/Write Timing t CYC CLK t t CL CH t t ADH ADS ADSP ADSC t t AS AH ADDRESS A1 A2 A3 A4 A5 A6 t t WES WEH BWE, BW[A:D] t t CEH CES CE ADV OE t t DH DS t OELZ High-Z D(A3) D(A5) D(A6) Data In (D) t OEHZ t CDV Data Out (Q) Q(A1) Q(A2) Q(A4) Q(A4+1) Q(A4+2) Q(A4+3) Back-to-Back Back-to-Back READs Single WRITE BURST READ WRITEs DON’T CARE UNDEFINED Notes: 18. The data bus (Q) remains in High-Z following a Write cycle unless an ADSP,
Краткое содержание страницы № 13
PRELIMINARY CY7C1336H Timing Diagrams (continued) [20, 21] ZZ Mode Timing CLK t t ZZ ZZREC ZZ t ZZI I SUPPLY I DDZZ t RZZI ALL INPUTS DESELECT or READ Only (except ZZ) Outputs (Q) High-Z DON’T CARE Notes: 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Document #: 001-00210 Rev. *A Page 13 of 15 [+] Feedback
Краткое содержание страницы № 14
PRELIMINARY CY7C1336H Ordering Information Speed Package Operating (MHz) Ordering Code Diagram Package Type Range 133 CY7C1336H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1336H-133AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Industrial 100 CY7C1336H-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1336H-100AXI 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Industrial P
Краткое содержание страницы № 15
PRELIMINARY CY7C1336H Document History Page Document Title: CY7C1336H 2-Mbit (64K x 32) Flow-Through Sync SRAM Document Number: 001-00210 Orig. of REV. ECN NO. Issue Date Change Description of Change ** 347377 See ECN PCI New Data Sheet *A 428408 See ECN NXR Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Changed Three-State to Tri-State. Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the Electrical
