Руководство по эксплуатации Cypress CY7C1024DV33

Краткое содержание страницы № 1

CY7C1024DV33
3-Mbit (128K X 24) Static RAM
Features Functional Description
■ High speed The CY7C1024DV33 is a high performance CMOS static RAM
organized as 128K words by 24 bits. This device has an
❐ t = 10 ns
AA
automatic power down feature that significantly reduces power
■ Low active power
consumption when deselected.
❐ I = 175 mA at 10 ns
CC
To write to the device, enable the chip (CE LOW, CE HIGH,
1 2
■ Low CMOS standby power and CE LOW), while forcing the Write Enable (WE) input LOW.
3
❐

Краткое содержание страницы № 2

CY7C1024DV33 Selection Guide Description –10 Unit Maximum Access Time 10 ns Maximum Operating Current 175 mA Maximum CMOS Standby Current 25 mA Pin Configuration [1] Figure 1. 119-Ball PBGA Top View 1 2 3 4 5 6 7 A NC AA AA A NC B NC A A CE AA NC 1 C I/O NC CE NC CE NC I/O 12 2 3 0 D I/O V V V V V I/O 13 DD SS SS SS DD 1 E I/O V V V V V I/O 14 SS DD SS DD SS 2 F I/O V V V V V I/O 15 DD SS SS SS DD 3 G I/O V V V V V I/O 16 SS DD SS DD SS 4 H I/O V V V V V I/O 17 DD SS SS SS DD 5 J NC V V V V V

Краткое содержание страницы № 3

CY7C1024DV33 [2] DC Input Voltage ............................... –0.5V to V + 0.5V Maximum Ratings CC Current into Outputs (LOW) ........................................ 20 mA Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Static Discharge Voltage............. ...............................>2001V Storage Temperature ................................. –65 °C to +150 °C (MIL-STD-883, Method 3015) Ambient Temperature with Latch Up Current

Краткое содержание страницы № 4

CY7C1024DV33 [4] Figure 2. AC Test Loads and Waveform 50 Ω R1 317 Ω 3.3V OUTPUT = 1.5V V TH OUTPUT Z = 50 Ω 30 pF* 0 R2 5 pF* 351 Ω *Including jig (a) and scope (b) *Capacitive Load consists of all components of the test environment All input pulses 3.0V 90% 90% 10% 10% GND Fall Time:> 1V/ns Rise Time > 1V/ns (c) AC Switching Characteristics [5] Over the Operating Range –10 Parameter Description Unit Min Max Read Cycle [6] V (Typical) to the First Access 100 μs t power CC Read Cycle Time 10

Краткое содержание страницы № 5

CY7C1024DV33 AC Switching Characteristics (continued) [5] Over the Operating Range –10 Parameter Description Unit Min Max [9, 10] Write Cycle t Write Cycle Time 10 ns WC [3] t CE active LOW to Write End 7ns SCE t Address Setup to Write End 7 ns AW t Address Hold from Write End 0 ns HA t Address Setup to Write Start 0 ns SA t WE Pulse Width 7 ns PWE t Data Setup to Write End 5.5 ns SD t Data Hold from Write End 0 ns HD [7] t WE HIGH to Low Z 3ns LZWE [7] t WE LOW to High Z 5ns HZWE Data Reten

Краткое содержание страницы № 6

CY7C1024DV33 Switching Waveforms [13, 14] Figure 3. Read Cycle No. 1 (Address Transition Controlled) tRC RC ADDRESS t AA t OHA DATA OUT PREVIOUS DATA VALID DATA VALID [3, 14, 15] Figure 4. Read Cycle No. 2 (OE Controlled) ADDRESS t RC CE t ACE OE t HZOE t DOE t HZCE t LZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA OUT DATA VALID t LZCE t PD V t ICC CC PU SUPPLY 50% 50% CURRENT ISB [3, 16, 17] Figure 5. Write Cycle No. 1 (CE Controlled) t WC ADDRESS t SCE CE t SA t SCE t t AW HA t PWE WE t t SD

Краткое содержание страницы № 7

CY7C1024DV33 Switching Waveforms (continued) [3, 16, 17] Figure 6. Write Cycle No. 2 (WE Controlled, OE HIGH During Write) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE OE t t SD HD DATA VALID IN DATA I/O NOTE 18 t HZOE [3, 17] Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE t t SD HD DATA I/O NOTE 18 DATA VALID t t LZWE HZWE Truth Table CE CE CE OE WE I/O – I/O Mode Power 1 2 3 0 23 H XXXX High Z Power Down Standby (I ) SB X L X X X High Z

Краткое содержание страницы № 8

CY7C1024DV33 Ordering Information Speed Package Operating Ordering Code Package Type (ns) Name Range 10 CY7C1024DV33-10BGXI 51-85115 119-Ball Plastic Ball Grid Array (14 x 22 x 2.4 mm) (Pb-Free) Industrial Package Diagram Figure 8. 119-Ball PBGA (14 x 22 x 2.4 mm) 51-85115-*B Document Number: 001-08353 Rev. *C Page 8 of 9 [+] Feedback [+] Feedback

Краткое содержание страницы № 9

CY7C1024DV33 Document History Page Document Title: CY7C1024DV33, 3-Mbit (128K X 24) Static RAM Document Number: 001-08353 Orig. of Submission Rev. ECN No. Description of Change Change Date ** 469517 NXR See ECN New data sheet *A 499604 NXR See ECN Added note 1 for NC pins Changed I specification from 150 mA to 185 mA CC Updated Test Condition for I in DC Electrical Characteristics table CC Added note for t , t , t , t , t , t in AC Switching Characteristics Table ACE LZCE HZCE PU PD SCE on