Краткое содержание страницы № 1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD904L
860 MHz, 20 dB gain power
doubler amplifier
Product specification 2001 Nov 01
Supersedes data of 1999 Aug 17
Краткое содержание страницы № 2
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L FEATURES PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common • Rugged construction 5+V B • Gold metallization ensures excellent reliability 7 common • Low DC current consumption. 8 common 9 output APPLICATIONS • CATV systems operating in the 40 to 900 MHz handbook, halfpage frequency ran
Краткое содержание страницы № 3
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L CHARACTERISTICS Bandwidth 40 to 900 MHz; V = 24 V; T =35 °C; Z =Z =75 Ω. B mb S L SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G power gain f = 50 MHz 19.7 20 20.3 dB p f = 900 MHz 20.5 21 21.5 dB SL slope straight line f = 40 to 900 MHz 0.4 0.9 1.4 dB FL flatness straight line f = 40 to 900 MHz -± 0.15 ±0.3 dB S input return losses f = 40 to 80 MHz 21 25 - dB 11 f = 80 to 160 MHz 22 30 - dB f = 160
Краткое содержание страницы № 4
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT CSO composite second order 49 channels flat; V = 47 dBmV; -- 69 - 63 dB o distortion f = 860.5 MHz m 77 channels flat; V = 44 dBmV; -- 73 - 68 dB o f = 548.5 MHz m 110 channels flat; V = 44 dBmV; -- 69 - 63 dB o f = 746.5 MHz m 129 channels flat; V = 44 dBmV; -- 65 - 59 dB o f = 860.5 MHz m 110 channels; f = 150 MHz; -- 68 - 63 dB m V = 49 dBmV at 550 MHz; no
Краткое содержание страницы № 5
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L MGS452 MGS453 - 50 52 - 50 52 handbook, halfpage handbook, halfpage V X V CTB o mod o (2) (dB) (2) (1) (1) (dBmV) (dB) (dBmV) (3) (3) (4) - 60 48 - 60 48 (2) (4) (3) (4) - 70 44 - 70 44 (1) (1) - 80 40 - 80 40 36 36 - 90 - 90 0 200 400 600 800 0 200 400 600 800 f (MHz) f (MHz) Z =Z =75 Ω; V = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); Z =Z =75 Ω; V = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); S L B S
Краткое содержание страницы № 6
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L MGS455 MGS456 - 50 52 - 50 52 handbook, halfpage handbook, halfpage (2) V X V CTB (2) o mod o (3) (dB) (1) (dBmV) (dB) (dBmV) (1) (3) (4) - 60 48 - 60 48 (4) - 70 44 - 70 44 - 80 40 - 80 40 36 36 - 90 - 90 0 200 400 600 800 1000 0 200 400 600 800 1000 f (MHz) f (MHz) Z =Z =75 Ω; V = 24 V; 129 chs; Z =Z =75 Ω; V = 24 V; 129 chs; S L B S L B tilt = 12.5 dB; (50 to 860 MHz). tilt = 12.5 dB; (50 to 860 MHz
Краткое содержание страницы № 7
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L MGS458 MGS459 - 20 - 30 handbook, halfpage handbook, halfpage CTB CSO (dB) (dB) - 30 - 40 - 40 - 50 (1) - 50 - 60 (2) (1) (3) - 60 (2) - 70 (3) - 70 - 80 40 45 50 55 40 45 50 55 V (dBmV) V (dBmV) o o Z =Z =75 Ω; V = 24 V; 129 chs; f = 859.25 MHz. Z =Z =75 Ω; V = 24 V; 129 chs; f = 860.5 MHz. S L B m S L B m (1) Typ. +3 σ. (1) Typ. +3 σ. (2) Typ. (2) Typ. (3) Typ. - 3 σ. (3) Typ. - 3 σ. Fig.8 Composite
Краткое содержание страницы № 8
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A 2 1 23 5 78 9 A L F S W e b w M c e 1 d q y M B U 2 Q 2 B q y M B 1 y M B p U q 1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) U A d A D E L Q Z 2 1 UNITbF c eep q q q S U W w y 1 1 2 2 max. max. m
Краткое содержание страницы № 9
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS (2) STATUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be
Краткое содержание страницы № 10
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L NOTES 2001 Nov 01 10
Краткое содержание страницы № 11
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L NOTES 2001 Nov 01 11
Краткое содержание страницы № 12
Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of
