Руководство по эксплуатации Panasonic MA3SE01

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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3SE01
Silicon epitaxial planar type
Unit: mm
0.28±0.05
For cellular phone
+0.05
0.12
–0.02
3
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
F
12
0.28±0.05
• Small junction-capacitance
(0.51) (0.51)
(0.80) (0.80) +0.05
0.60
–0.03
+0.05
1.60
–0.03
3˚
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
Reverse voltage V 20 V
R
1 : Anode 1
Maximum peak rever

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This product complies with the RoHS Directive (EU 2002/95/EC). MA3SE01 I  V I  V C  V t R F F R R 3 3 10 1.2 10 T = 25°C a 2 10 75°C 25°C 2 10 T = 125°C T = 125°C a a 10 0.8 −20°C 10 75°C 1 1 −1 10 0.4 25°C −1 10 −2 10 −3 −2 10 0 10 010 20 010 20 0 0.2 0.4 0.6 0.8 1.0 1.2 Reverse voltage V (V) Reverse voltage V (V) ( ) Forward voltage V V R R F SKH00066CED 2 Forward current I (mA) F Reverse current I (µA) R Terminal capacitance C (pF) t

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application