Resumo do conteúdo contido na página número 1
CY7C1516KV18, CY7C1527KV18
CY7C1518KV18, CY7C1520KV18
72-Mbit DDR-II SRAM 2-Word
Burst Architecture
Features Functional Description
■ 72-Mbit Density (8M x 8, 8M x 9, 4M x 18, 2M x 36) The CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and
CY7C1520KV18 are 1.8V Synchronous Pipelined SRAM
■ 333 MHz Clock for High Bandwidth
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry and
■ 2-word Burst for reducing Address Bus Frequency
a 1-bit
Resumo do conteúdo contido na página número 2
4M x 8 Array 4M x 9 Array 4M x 8 Array 4M x 9 Array CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Logic Block Diagram (CY7C1516KV18) Write Write 22 A Reg Reg (21:0) Address Register 8 LD K Output CLK R/W K Logic Gen. Control C DOFF Read Data Reg. C 16 CQ V 8 REF 8 Reg. Reg. CQ Control R/W Logic 8 NWS 8 [1:0] Reg. DQ 8 [7:0] Logic Block Diagram (CY7C1527KV18) Write Write 22 A Reg Reg (21:0) Address Register 9 LD K Output CLK R/W K Logic Gen. Control C DOFF Read Data Reg. C 18 CQ V 9 REF 9
Resumo do conteúdo contido na página número 3
1M x 36 Array 2M x 18 Array 1M x 36 Array 2M x 18 Array CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Logic Block Diagram (CY7C1518KV18) Burst A0 Logic Write Write 22 21 A Reg Reg (21:0) A Address (21:1) Register 18 LD K Output CLK R/W K Logic Gen. Control C DOFF Read Data Reg. C 36 CQ V 18 REF 18 Reg. Reg. Control CQ R/W Logic 18 18 BWS DQ [1:0] Reg. 18 [17:0] Logic Block Diagram (CY7C1520KV18) Burst A0 Logic Write Write 21 20 A Reg Reg (20:0) A Address (20:1) Register 36 LD K Output CL
Resumo do conteúdo contido na página número 4
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Pin Configuration [1] The pin configurations for CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1516KV18 (8M x 8) 1 2 3 4 5 6 7 8 9 10 11 A CQ AA R/W NWS K NC/144M LD AA CQ 1 B NC NC NC A NC/288M K NWS ANC NC DQ3 0 C NC NC NC V AAA V NC NC NC SS SS D NC NC NC V V V V V NC NC NC SS SS SS SS SS E NC NC DQ4 V V V V V NC NC DQ2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD
Resumo do conteúdo contido na página número 5
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Pin Configuration (continued) [1] The pin configurations for CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1518KV18 (4M x 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ AA R/W BWS K NC/144M LD AA CQ 1 B NC DQ9 NC A NC/288M K BWS ANC NC DQ8 0 C NC NC NC V AA0A V NC DQ7 NC SS SS D NC NC DQ10 V V V V V NC NC NC SS SS SS SS SS E NC NC DQ11 V V V V V NC NC DQ6 DDQ SS SS SS DDQ F NC DQ12 NC V V
Resumo do conteúdo contido na página número 6
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Pin Definitions Pin Name I/O Pin Description DQ Input Output- Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid write [x:0] Synchronous operations. These pins drive out the requested data when the read operation is active. Valid data is driven out on the rising edge of both the C and C clocks during read operations or K and K when in single clock mode. When read access is deselected, Q are aut
Resumo do conteúdo contido na página número 7
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Pin Definitions (continued) Pin Name I/O Pin Description CQ Output Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timing for the echo clocks is shown in the AC Timing table. CQ Output Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the inpu
Resumo do conteúdo contido na página número 8
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 are both asserted active. On the data register, provided BWS Functional Overview [1:0] subsequent rising edge of the Negative Input Clock (K) the infor- mation presented to D is also stored into the write data The CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and [17:0] register, provided BWS are both asserted active. The 36 bits CY7C1520KV18 are synchronous pipelined Burst SRAMs [1:0] of data are then written into the memory array at the specif
Resumo do conteúdo contido na página número 9
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Programmable Impedance PLL An external resistor, RQ, must be connected between the ZQ pin These chips use a PLL that is designed to function between on the SRAM and V to allow the SRAM to adjust its output 120 MHz and the specified maximum clock frequency. During SS driver impedance. The value of RQ must be 5x the value of the power up, when the DOFF is tied HIGH, the PLL is locked after intended line impedance driven by the SRAM. The allow
Resumo do conteúdo contido na página número 10
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Truth Table [2, 3, 4, 5, 6, 7] The truth table for the CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow. Operation K LD R/W DQ DQ Write Cycle: L-H L L D(A1) at K(t + 1) ↑ D(A2) at K(t + 1) ↑ Load address; wait one cycle; input write data on consecutive K and K rising edges. Read Cycle: L-H L H Q(A1) at C(t + 1)↑ Q(A2) at C(t + 2) ↑ Load address; wait one and a half cycle; read data on consecutive C and C rising edges. NOP:
Resumo do conteúdo contido na página número 11
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Write Cycle Descriptions [2, 8] The write cycle description table for CY7C1527KV18 follows. BWS K K 0 L L–H – During the data portion of a write sequence, the single byte (D ) is written into the device. [8:0] ) is written into the device. L – L–H During the data portion of a write sequence, the single byte (D [8:0] H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into the device
Resumo do conteúdo contido na página número 12
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions are serially loaded into the instruction These SRAMs incorporate a serial boundary scan Test Access register. This register is loaded when it is placed between the TDI Port (TAP) in the FBGA package. This part is fully compliant with and TDO pins, as shown in TAP Controller Block Diagram on IEEE Standard #1149.1-2001. The TAP operates using JEDEC page 15. Upon
Resumo do conteúdo contido na página número 13
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 IDCODE PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection The IDCODE instruction loads a vendor-specific, 32-bit code into of another boundary scan test operation. the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the The shifting of data for the SAMPLE and PRELOAD phases can device when the TA
Resumo do conteúdo contido na página número 14
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 TAP Controller State Diagram [9] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 0 SHIFT-DR SHIFT-IR 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-00437 Rev
Resumo do conteúdo contido na página número 15
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 TAP Controller Block Diagram 0 Bypass Register 2 1 0 Selection Selection TDI TDO Instruction Register Circuitry Circuitry 31 30 29 . . 2 1 0 Identification Register . 108 . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [10, 11, 12] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH Output HIGH Voltage I = −100 μA1.6 V V OH2 OH
Resumo do conteúdo contido na página número 16
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 TAP AC Switching Characteristics [13, 14] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capt
Resumo do conteúdo contido na página número 17
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Identification Register Definitions Value Instruction Field Description CY7C1516KV18 CY7C1527KV18 CY7C1518KV18 CY7C1520KV18 Revision Number 000 000 000 000 Version number. (31:29) Cypress Device ID 11010100010000100 11010100010001100 11010100010010100 11010100010100100 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1111 Indi
Resumo do conteúdo contido na página número 18
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P29 9G 57 5B85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N32 9F 60 5C88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43
Resumo do conteúdo contido na página número 19
~ ~ CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 PLL Constraints Power Up Sequence in DDR-II SRAM ■ PLL uses K clock as its synchronizing input. The input must DDR-II SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . KC Var predefined manner to prevent undefined operations. ■ The PLL functions at frequencies down to 120 MHz. Power Up Sequence ■ If the input clock is unstable and the PLL is enabled, then the ■ Apply power and drive DOFF eith
Resumo do conteúdo contido na página número 20
CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Current into Outputs (LOW) ........................................ 20 mA Maximum Ratings Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V Exceeding maximum ratings may impair the useful life of the Latch up Current..................................................... >200 mA device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Operating Range Ambient Temperature with Pow
