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CY7C144 CY7C1458K x 8/9 Dual-Port Static RAM
with SEM, INT, BUSY
CY7C145, CY7C144
8K x 8/9 Dual-Port Static RAM
with SEM, INT, BUSY
Features Functional Description
■ True Dual-Ported memory cells that enable simultaneous The CY7C144 and CY7C145 are high speed CMOS 8K x 8
reads of the same memory location and 8K x 9 dual-port static RAMs. Various arbitration schemes
are included on the CY7C144/5 to handle situations when
■ 8K x 8 organization (CY7C144)
multiple processors access the same piece
Resumo do conteúdo contido na página número 2
CY7C145, CY7C144 Pin Configurations Figure 1. 68-Pin PLCC (Top View) 98 7 6 5 4 3 2 168 6766 65646362 61 I/O 2L A 10 60 5L I/O 3L A 11 59 4L I/O A 4L 12 58 3L I/O 5L 13 57 A 2L GND A 14 56 1L I/O 6L A 15 55 0L I/O 7L INT 16 54 L V CC 17 53 BUSY L CY7C144/5 GND 18 52 GND I/O 0R 19 51 M/S I/O 1R BUSY 20 50 R I/O 2R 49 21 INT R V CC 48 A 0R 22 I/O 3R 23 47 A 1R I/O 4R 24 46 A 2R I/O 5R 25 45 A 3R I/O 6R A 26 44 4R 2728 29 303132 3334 353637 3839 4041 4243 Figure 2. 64-Pin PLCC (Top View) Notes
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CY7C145, CY7C144 Pin Configurations (continued) Figure 3. 80-Pin TQFP NC 1 60 NC /O 2L A 2 5L 59 /O A 4L 3L 3 58 /O 4 A 4L 57 3L A /O 5 2L 5L 56 A GND 6 1L 55 /O A 0L 6L 7 54 /O INT 7L 8 53 L BUSY V L CC 9 52 GND NC 10 CY7C145 51 M/S GND 11 50 /O 0R BUSY 12 R 49 /O 1R INT 13 48 R /O 2R A 14 47 0R V CC A 15 1R 46 /O 3R 16 A 45 2R /O A 4R 17 3R 44 O A 5R 18 4R 43 /O 6R 19 NC 42 NC 20 NC 41 Table 1. Pin Definitions Left Port Right Port Description I/O Data bus Input/Output I/O 0L −7L(8L) 0R −7
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CY7C145, CY7C144 Output Current into Outputs (LOW)............................. 20 mA Maximum Ratings Static Discharge Voltage........................................... >2001V Exceeding maximum ratings may impair the useful life of the (per MIL-STD-883, Method 3015) [5] device. These user guidelines are not tested. Latch-Up Current.................................................... >200 mA Storage Temperature . .. ... .. .. .. .. ... .. .. .. ... .. .. .. .. ... −65 °C to +150 °C Ambient Tem
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CY7C145, CY7C144 Electrical Characteristics Over the Operating Range (continued) 7C144-35 7C144-55 7C145-35 7C145-55 Parameter Description Test Conditions Unit Min Max Min Max V Output HIGH Voltage V = Min., I = −4.0 mA 2.4 2.4 V OH CC OH V Output LOW Voltage V = Min., I = 4.0 mA 0.4 0.4 V OL CC OL V Input HIGH Voltage 2.2 2.2 V IH V Input LOW Voltage 0.8 0.8 V IL I Input Leakage Current GND < V < V −10 +10 −10 +10 μA IX I CC I Output Leakage Current Outputs Disabled, GND < V < V −10 +10 −10 +
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CY7C145, CY7C144 Figure 4. AC Test Loads and Waveforms 5V 5V R1 = 893 Ω R1 = 893 Ω R = 250 Ω TH OUTPUT OUTPUT OUTPUT C= 30 pF C = 30pF C= 5pF R = 347 Ω R2 = 347 Ω V = 1.4V TH (a) Normal Load (Load1) (b) Th évenin Equivalent (Load 1) (c) Three-State Delay (Load 3) ALL INPUT PULSES OUTPUT 3.0V 90% 90% 10% 10% C= 30pF GND ≤ 3 ns ≤ 3ns Load (Load 2) [9] Switching Characteristics Over the Operating Range 7C144-15 7C144-25 7C144-35 7C144-55 7C145-15 7C145-25 7C145-35 7C145-55 Parameter Description
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CY7C145, CY7C144 [9] Switching Characteristics Over the Operating Range (continued) 7C144-15 7C144-25 7C144-35 7C144-55 7C145-15 7C145-25 7C145-35 7C145-55 Parameter Description Unit Min Max Min Max Min Max Min Max t Data Set-Up to Write End 10 15 15 25 ns SD t Data Hold From Write End 0 0 0 0 ns HD [11,12] t R/W LOW to High Z 10 15 20 25 ns HZWE [11,12] t R/W HIGH to Low Z 3 3 3 3 ns LZWE [13] t Write Pulse to Data Delay 30 50 60 70 ns WDD [13] t Write Data Valid to Read Data 25 30 35 40 ns
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CY7C145, CY7C144 Switching Waveforms [15, 16] Figure 5. Read Cycle No. 1 (Either Port Address Access) t RC ADDRESS t AA t OHA DATA OUT PREVIOUS DATA VALID DATA VALID [15, 17, 18] Figure 6. Read Cycle No. 2 (Either Port CE/OE Access) SEM or CE t HZCE t ACE OE t HZOE t DOE t LZOE t LZCE DATA VALID DATA OUT t PU t PD I CC I SB [19, 20] Figure 7. Read Timing with Port-to-Port Delay (M/S=L) t WC ADDRESS R MATCH t PWE R/W R t t SD HD DATAIN VALID R ADDRESS L MATCH t DDD DATA VALID OUTL t WDD Not
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CY7C145, CY7C144 Switching Waveforms (continued) [21, 22, 23] Figure 8. Write Cycle No. 1: OE Three-State Data I/Os (Either Port) t WC ADDRESS t SCE SEM OR CE t t HA AW t PWE R/W t t t SA SD HD DATA IN DATA VALID OE t t HZOE LZOE HIGH IMPEDANCE DATA OUT [21, 23, 24] Figure 9. Write Cycle No. 2: R/W Three-State Data I/Os (Either Port) t WC ADDRESS t t SCE HA OR CE SEM t AW t SA t PWE R/W t t SD HD DATAVALID DATA IN t t LZWE HZWE HIGH IMPEDANCE DATA OUT Notes 21. The internal write time of th
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CY7C145, CY7C144 Switching Waveforms (continued) [25] Figure 10. Semaphore Read After Write Timing, Either Side t t AA OHA A −A VALID ADDRESS VALID ADDRESS 0 2 t AW t ACE t HA SEM t t SCE SOP t SD I/O 0 DATA VALID IN DATA VALID OUT t HD t t SA PWE R/W t t SWRD DOE t OE SOP WRITE CYCLE READ CYCLE [26, 27, 28] Figure 11. Semaphore Contention A −A 0L 2L MATCH R/W L SEM L t SPS A −A 0R 2R MATCH R/W R SEM R Notes 25. CE = HIGH for the duration of the above timing (both write and read cycle). 26.
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CY7C145, CY7C144 Switching Waveforms (continued) [20] Figure 12. Read with BUSY (M/S=HIGH) t WC ADDRESS R MATCH t PWE R/W R t t SD HD DATAIN VALID R t PS ADDRESS L MATCH t BLA t BHA BUSY L t BDD t DDD DATA VALID OUTL t WDD Figure 13. Write Timing with Busy Input (M/S=LOW) t PWE R/W t t WB WH BUSY Document #: 38-06034 Rev. *D Page 11 of 21 [+] Feedback
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CY7C145, CY7C144 Switching Waveforms (continued) [29] Figure 14. Busy Timing Diagram No. 1 (CE Arbitration) CE Valid First: L ADDRESS L,R ADDRESS MATCH CE L t PS CE R t t BLC BHC BUSY R CE Valid First: R ADDRESS ADDRESS MATCH L,R CE R t PS CE L t t BLC BHC BUSY L [29] Figure 15. Busy Timing Diagram No. 2 (Address Arbitration) Left Address Valid First: t or t RC WC ADDRESS L ADDRESS MATCH ADDRESS MISMATCH t PS ADDRESS R t t BLA BHA BUSY R Right Address Valid First: t or t RC WC ADDRESS R A
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CY7C145, CY7C144 Switching Waveforms (continued) Figure 16. Interrupt Timing Diagrams Left Side Sets INT : R t WC ADDRESS WRITE 1FFF L [30] t HA CE L R/W L INT R [31] t INS Right Side Clears INT : R t RC ADDRESS READ 1FFF R CE R [31] t INR R/W R OE R INT R Right Side Sets INT : L t WC ADDRESS R WRITE 1FFE [30] t HA CE R R/W R INT L [31] t INS Left Side Clears INT : L t RC ADDRESS R READ 1FFE CE L [31] t INR R/W L OE L INT L Notes 30. t depends on which enable pin (CE or R/W ) is deasserted f
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CY7C145, CY7C144 Master/Slave Architecture An M/S pin is provided in order to expand the word width by The CY7C144/5 consists of a an array of 8K words of 8/9 bits configuring the device as either a master or a slave. The BUSY each of dual-port RAM cells, I/O and address lines, and control output of the master is connected to the BUSY input of the signals (CE, OE, R/W). These control pins permit independent slave. This enables the device to interface to a master device access for reads or writ
Resumo do conteúdo contido na página número 15
CY7C145, CY7C144 Table 3. Non-Contending Read/Write Inputs Outputs CE R/W OE SEM I/O Operation 0 −7/8 H X X H High Z Power-Down H H L L Data Out Read Data in Semaphore X X H X High Z I/O Lines Disabled H X L Data In Write to Semaphore LH L H Data Out Read LL X H Data In Write L X X L Illegal Condition Table 4. Interrupt Operation Example (assumes BUSY = BUSY = HIGH) L R Function Left Port Right Port R/W CE OE A INT R/W CE OE A INT 0 −12 0 −12 Set Left INT X X X X L L L X 1FFE X Reset Left I
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CY7C145, CY7C144 Figure 17. Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT NORMALIZED SUPPLY CURRENT vs. OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE vs. SUPPLY VOLTAGE 200 1.4 1.2 I CC 1.2 1.0 I 160 CC 1.0 I 0.8 SB3 I SB3 120 0.8 0.6 V = 5.0V CC V = 5.0V CC 0.6 80 T = 25°C A V = 5.0V IN 0.4 0.4 40 0.2 0.2 0 0.6 0.0 5.0 4.0 4.5 5.0 5.5 6.0 −55 25 125 0 1.0 2.0 3.0 4.0 AMBIENT TEMPERATURE (°C) OUTPUT VOLTAGE (V) SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME OUTPUT
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CY7C145, CY7C144 Ordering Information 8K x8 Dual-Port SRAM Speed Package Operating (ns) Ordering Code Name Package Type Range 15 CY7C144-15AC A65 64-Pin Thin Quad Flat Pack Commercial CY7C144-15AXC A65 64-Pin Pb-Free Thin Quad Flat Pack CY7C144-15JC J81 68-Pin Plastic Leaded Chip Carrier CY7C144-15JXC J81 68-Pin Pb-Free Plastic Leaded Chip Carrier CY7C144-15AI A65 64-Pin Thin Quad Flat Pack Industrial CY7C144-15JXI J81 68-Pin Pb-Free Plastic Leaded Chip Carrier CY7C144-15AXI A65 64-Pin Pb-Free
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CY7C145, CY7C144 8K x9 Dual-Port SRAM Speed Package Operating (ns) Ordering Code Name Package Type Range 15 CY7C145-15AC A80 80-Pin Thin Quad Flat Pack Commercial CY7C145-15AXC A80 80-Pin Pb-Free Thin Quad Flat Pack CY7C145-15JC J81 68-Pin Plastic Leaded Chip Carrier 25 CY7C145-25AC A80 80-Pin Thin Quad Flat Pack Commercial CY7C145-25JC J81 68-Pin Plastic Leaded Chip Carrier CY7C145-25AI A80 80-Pin Thin Quad Flat Pack Industrial CY7C145-25JI J81 68-Pin Plastic Leaded Chip Carrier 35 CY7C145-35
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CY7C145, CY7C144 Package Diagrams Figure 18. 64-Pin Thin Plastic Quad Flat Pack (14 x 14 x 1.4 mm) A65 (51-85046) 51-85046-*C Document #: 38-06034 Rev. *D Page 19 of 21 [+] Feedback
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CY7C145, CY7C144 Figure 19. 80-Pin Thin Plastic Quad Flat Pack A80 (51-85065) 51-85065-*B Figure 20. 68-Pin Plastic Leaded Chip Carrier J81 (51-85005) 51-85005-*A Document #: 38-06034 Rev. *D Page 20 of 21 [+] Feedback
