Resumo do conteúdo contido na página número 1
CY7C1266V18, CY7C1277V18
CY7C1268V18, CY7C1270V18
36-Mbit DDR-II+ SRAM 2-Word
Burst Architecture (2.5 Cycle Read Latency)
Features Functional Description
■ 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36) The CY7C1266V18, CY7C1277V18, CY7C1268V18, and
CY7C1270V18 are 1.8V Synchronous Pipelined SRAMs
■ 300 MHz to 400 MHz clock for high bandwidth
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
■ 2-Word burst for reducing ad
Resumo do conteúdo contido na página número 2
2M x 8 Array 2M x 9 Array 2M x 8 Array 2M x 9 Array CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Logic Block Diagram (CY7C1266V18) Write Write 21 A (20:0) Reg Reg Address Register LD 8 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 16 CQ V 8 REF 8 Reg. Reg. CQ Control R/W 8 Logic DQ [7:0] 8 NWS [1:0] Reg. 8 QVLD Logic Block Diagram (CY7C1277V18) Write Write 21 A (20:0) Reg Reg Address Register LD 9 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 18 CQ V 9 REF 9 Reg. Reg
Resumo do conteúdo contido na página número 3
512K x 36 Array 1M x 18 Array 1M x 18 Array 512K x 36 Array CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Logic Block Diagram (CY7C1268V18) Write Write 20 A (19:0) Reg Reg Address Register LD 18 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 36 CQ V 18 REF 18 Reg. Reg. CQ Control R/W Logic DQ [17:0] 18 BWS 18 [1:0] Reg. 18 QVLD Logic Block Diagram (CY7C1270V18) Write Write 19 A (18:0) Reg Reg Address Register LD 36 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 72 CQ V
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CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Pin Configurations 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1266V18 (4M x 8) 1 23 4 5 6 7 89 10 11 NC/72M A NC/144M AA CQ A CQ R/W NWS K LD 1 NC NC NC A NC/288M K A NC NC DQ3 B NWS 0 C NC NC NC V AAA V NC NC NC SS SS NC NC V V V V NC NC D NC V NC SS SS SS SS SS NC NC DQ4 V V V V V NC NC DQ2 E DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC NC DQ5 V V V V V NC NC NC DDQ DD SS DD DDQ H V V V V V V V V V ZQ DOFF REF DDQ DDQ
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CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Pin Configurations (continued) 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1268V18 (2M x 18) 1 234 5 6 7 89 10 11 NC/72M A NC/144M AA CQ A CQ R/W BWS K LD 1 NC DQ9 NC A NC/288M K A NC NC DQ8 B BWS 0 NC NC NC ANCA NC DQ7 NC C V V SS SS NC NC DQ10 V V V V V NC NC NC D SS SS SS SS SS NC NC DQ11 V V V V V NC NC DQ6 E DDQ SS SS DDQ SS F NC DQ12 NC V V V V V NC NC DQ5 DDQ DD SS DD DDQ G NC NC DQ13 V V V V V NC NC NC DDQ DD SS DD DDQ H V V V V V V V V
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CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Pin Definitions Pin Name IO Pin Description Data Input/Output Signals. Inputs are sampled on the rising edge of K and K clocks during DQ Input/Output- [x:0] valid write operations. These pins drive out the requested data during a read operation. Valid Synchronous data is driven out on the rising edge of both the K and K clocks during read operations. When read access is deselected, Q are automatically tri-stated. [x:0] – CY7C1266V18 DQ [7:0]
Resumo do conteúdo contido na página número 7
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Pin Definitions (continued) Pin Name IO Pin Description ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q output impedance are set to 0.2 x RQ, where RQ is a [x:0] resistor connected between ZQ and ground. Alternatively, this pin can be connected directly to V , which enables the minimum impedance mode. This pin cannot be connected directly to DDQ GND or l
Resumo do conteúdo contido na página número 8
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Byte Write Operations Functional Overview Byte write operations are supported by the CY7C1268V18. A The CY7C1266V18, CY7C1277V18, CY7C1268V18, and write operation is initiated as described in the Write Operations CY7C1270V18 are synchronous pipelined Burst SRAMs section. The bytes that are written are determined by BWS and 0 equipped with a DDR interface. BWS , which are sampled with each set of 18-bit data words. 1 Accesses for both ports are i
Resumo do conteúdo contido na página número 9
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 the application note, DLL Considerations in Delay Lock Loop (DLL) QDRII/DDRII/QDRII+/DDRII+. The DLL can also be reset by These chips use a DLL that is designed to function between 120 slowing or stopping the input clocks K and K for a minimum of 30 MHz and the specified maximum clock frequency. The DLL may ns. However, it is not necessary for the DLL to be reset to lock to be disabled by applying ground to the DOFF pin. When the DLL the frequenc
Resumo do conteúdo contido na página número 10
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Write Cycle Descriptions [2, 8] The write cycle description table for CY7C1266V18 and CY7C1268V18 follows. BWS / BWS / 0 1 K Comments K NWS NWS 0 1 L L L–H – During the data portion of a write sequence: CY7C1266V18 − both nibbles (D ) are written into the device. [7:0] CY7C1268V18 − both bytes (D ) are written into the device. [17:0] L L – L-H During the data portion of a write sequence: CY7C1266V18 − both nibbles (D ) are written into the dev
Resumo do conteúdo contido na página número 11
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Write Cycle Descriptions [2, 8] The write cycle description table for CY7C1270V18 follows. BWS BWS BWS BWS K K Comments 0 1 2 3 LLLL L-H – During the data portion of a write sequence, all four bytes (D ) are written [35:0] into the device. LLLL – L-H During the data portion of a write sequence, all four bytes (D ) are written [35:0] into the device. L H H H L-H – During the data portion of a write sequence, only the lower byte (D ) is [8:0
Resumo do conteúdo contido na página número 12
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions can be serially loaded into the instruction These SRAMs incorporate a serial boundary scan test access register. This register is loaded when it is placed between the TDI port (TAP) in the FBGA package. This part is fully compliant with and TDO pins as shown in “TAP Controller Block Diagram” on IEEE Standard #1149.1-2001. The TAP operates using JEDEC page 15. Upon
Resumo do conteúdo contido na página número 13
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 IDCODE PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection The IDCODE instruction loads a vendor-specific, 32-bit code into of another boundary scan test operation. the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the The shifting of data for the SAMPLE and PRELOAD phases can device when the TAP co
Resumo do conteúdo contido na página número 14
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 TAP Controller State Diagram [9] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 0 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-DR UPDATE-IR 1 1 0 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-06347 Rev. *D
Resumo do conteúdo contido na página número 15
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 TAP Controller Block Diagram 0 Bypass Register Selection Selection Circuitry Circuitry 2 1 0 TDO TDI Instruction Register 29 31 30 . . 2 1 0 Identification Register . . . . 2 1 0 108 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [10, 11, 12] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH V Output HIGH Voltage I = −100 μA1.6 V OH2 OH V Out
Resumo do conteúdo contido na página número 16
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 TAP AC Switching Characteristics [13, 14] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capture H
Resumo do conteúdo contido na página número 17
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Identification Register Definitions Value Instruction Description Field CY7C1266V18 CY7C1277V18 CY7C1268V18 CY7C1270V18 Revision 000 000 000 000 Version number. Number (31:29) Cypress Device 11010111000000111 11010111000001111 11010111000010111 11010111000100111 Defines the type ID (28:12) of SRAM. Cypress JEDEC 00000110100 00000110100 00000110100 00000110100 Enables unique ID (11:1) identification of SRAM vendor. ID Register 1 1 1 1 Indicat
Resumo do conteúdo contido na página número 18
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P29 9G 57 5B85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N32 9F 60 5C88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43 11C
Resumo do conteúdo contido na página número 19
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 DLL Constraints Power Up Sequence in DDR-II+ SRAM ■ DLL uses K clock as its synchronizing input. The input must DDR-II+ SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . predefined manner to prevent undefined operations. During KC Var power up, when the DOFF is tied HIGH, the DLL gets locked after ■ The DLL functions at frequencies down to 120 MHz. 2048 cycles of stable clock. ■ If the input clock is u
Resumo do conteúdo contido na página número 20
CY7C1266V18, CY7C1277V18 CY7C1268V18, CY7C1270V18 Current into Outputs (LOW)......................................... 20 mA Maximum Ratings Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V Exceeding maximum ratings may impair the useful life of the Latch up Current..................................................... >200 mA device. These user guidelines are not tested. Storage Temperature ................................ –65°C to + 150°C Operating Range Ambient Temperature with Power
