Resumo do conteúdo contido na página número 1
CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
18-Mbit DDR-II+ SRAM 2-Word Burst
Architecture (2.5 Cycle Read Latency)
Features Functional Description
■ 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) The CY7C1166V18, CY7C1177V18, CY7C1168V18, and
CY7C1170V18 are 1.8V Synchronous Pipelined SRAMs
■ 300 MHz to 400 MHz clock for high bandwidth
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with an advanced synchronous peripheral circuitry.
■ 2-Word burst for reduci
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1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Logic Block Diagram (CY7C1166V18) Write Write 20 A (19:0) Reg Reg Address Register LD 8 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 16 CQ V 8 REF 8 Reg. Reg. CQ Control R/W 8 Logic DQ [7:0] 8 NWS [1:0] Reg. 8 QVLD Logic Block Diagram (CY7C1177V18) Write Write 20 A (19:0) Reg Reg Address Register LD 9 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 18 CQ V 9 REF 9 Reg. Reg
Resumo do conteúdo contido na página número 3
256K x 36 Array 512K x 18 Array 256K x 36 Array 512K x 18 Array CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Logic Block Diagram (CY7C1168V18) Write Write 19 A (18:0) Reg Reg Address Register LD 18 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 36 CQ V 18 REF 18 Reg. Reg. CQ Control R/W Logic DQ [17:0] 18 BWS 18 [1:0] Reg. 18 QVLD Logic Block Diagram (CY7C1170V18) Write Write 18 A Reg Reg (17:0) Address Register LD 36 K Output CLK K Logic R/W Gen. Control DOFF Read Data Reg. 72 C
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CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Pin Configurations 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1166V18 (2M x 8) 1 2 3 4 567 89 10 11 NC/72M A NC/144M A NC/36M CQ A CQ R/W NWS K LD 1 NC NC NC A NC/288M K A NC NC DQ3 B NWS 0 C NC NC NC V AAA V NC NC NC SS SS NC NC V V V V NC NC D NC V NC SS SS SS SS SS NC NC V V V V NC DQ2 E DQ4 V NC DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC NC DQ5 V V V V V NC NC NC DDQ DD SS DD DDQ H V V V V V V V V V ZQ REF DDQ DDQ
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CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Pin Configurations (continued) 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1168V18 (1M x 18) 1 2 3 4 567 89 10 11 NC/72M A NC/144M A NC/36M CQ A K CQ R/W BWS LD 1 NC DQ9 NC A NC/288M K A NC NC DQ8 B BWS 0 C NC NC NC V ANC A V NC DQ7 NC SS SS NC NC V V V V NC NC D DQ10 V NC SS SS SS SS SS NC NC V V V V NC DQ6 E DQ11 V NC DDQ SS SS SS DDQ F NC DQ12 NC V V V V V NC NC DQ5 DDQ DD SS DD DDQ G NC NC DQ13 V V V V V NC NC NC DDQ DD SS DD DDQ V V V V V V
Resumo do conteúdo contido na página número 6
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Pin Definitions Pin Name IO Pin Description DQ Input Output- Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid [x:0] Synchronous write operations. These pins drive out the requested data when a read operation is active. Valid data is driven out on the rising edge of both the K and K clocks during read operations. When read access is deselected, Q[x:0] are automatically tri-stated. CY7C1166V18 − DQ
Resumo do conteúdo contido na página número 7
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Pin Definitions (continued) Pin Name IO Pin Description ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q output impedance are set to 0.2 x RQ, where RQ is a resistor [x:0] connected between ZQ and ground. Alternatively, this pin can be connected directly to V , which DDQ enables the minimum impedance mode. This pin cannot be connected directly to GND or le
Resumo do conteúdo contido na página número 8
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Byte Write Operations Functional Overview Byte Write operations are supported by the CY7C1168V18. A The CY7C1166V18, CY7C1177V18, CY7C1168V18, and Write operation is initiated as described in the Write Operations CY7C1170V18 are synchronous pipelined Burst SRAMs section. The bytes that are written are determined by BWS and 0 equipped with a DDR interface. BWS which are sampled with each set of 18-bit data word. 1 Accesses are initiated on the ri
Resumo do conteúdo contido na página número 9
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 echo clock and follows the timing of any data pin. This signal is DDR-I mode (with 1.0 cycle latency and a longer access time). asserted half a cycle before valid data arrives. For more information, refer to the application note, “DLL Consid- erations in QDRII/DDRII/QDRII+/DDRII+”. The DLL can also be DLL reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary for the DLL to be These chips use a
Resumo do conteúdo contido na página número 10
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Write Cycle Descriptions [2, 8] The write cycle descriptions of CY7C1166V18 and CY7C1168V18 follows. BWS / BWS / 0 1 K Comments K NWS NWS 0 1 L L L–H – During the Data portion of a write sequence: CY7C1166V18 − both nibbles (D ) are written into the device. [7:0] CY7C1168V18 − both bytes (D ) are written into the device. [17:0] L L – L-H During the Data portion of a write sequence: CY7C1166V18 − both nibbles (D ) are written into the device. [
Resumo do conteúdo contido na página número 11
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 [2, 8] The write cycle descriptions of CY7C1170V18 follows. BWS BWS BWS BWS K K Comments 0 1 2 3 LLLL L-H – During the data portion of a write sequence, all four bytes (D ) are written into [35:0] the device. LLLL – L-H During the data portion of a write sequence, all four bytes (D ) are written into [35:0] the device. L H H H L-H – During the data portion of a write sequence, only the lower byte (D ) is written [8:0] into the device. D remai
Resumo do conteúdo contido na página número 12
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 IEEE 1149.1 Serial Boundary Scan (JTAG) Instruction Register These SRAMs incorporate a serial boundary scan test access port (TAP) in the FBGA package. This part is fully compliant with Load three-bit instructions serially into the instruction register. IEEE Standard #1149.1-2001. The TAP operates using JEDEC This register is loaded when it is placed between the TDI and standard 1.8V IO logic levels. TDO pins as shown in “TAP Controller Block Dia
Resumo do conteúdo contido na página número 13
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 IDCODE PRELOAD enables an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells be- The IDCODE instruction causes a vendor-specific 32-bit code to fore the selection of another boundary scan test operation. be loaded into the instruction register. It also places the instruction register between the TDI and TDO pins and enables The shifting of data for the SAMPLE and PRELOAD phases can the IDCODE to
Resumo do conteúdo contido na página número 14
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 TAP Controller State Diagram [9] Figure 2 shows the tap controller state diagram. Figure 2. Tap Controller State Diagram TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 0 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-DR UPDATE-IR 1 1 0 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of T
Resumo do conteúdo contido na página número 15
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 TAP Controller Block Diagram Figure 3. Tap Controller Block Diagram 0 Bypass Register Selection Selection TDI 2 1 0 TDO Circuitry Circuitry Instruction Register 29 31 30 . . 2 1 0 Identification Register 106 . . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [10, 11, 12] The Tap Electrical Characteristics table over the operating range follows. Parameter Description Test Conditions Min Max Unit V Output HIG
Resumo do conteúdo contido na página número 16
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 TAP AC Switching Characteristics [13, 14] The Tap AC Switching Characteristics over the operating range follows. Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TD
Resumo do conteúdo contido na página número 17
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Identification Register Definitions Value Instruction Field Description CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 Revision Number 000 000 000 000 Version number. (31:29) Cypress Device ID 11010111000000101 11010111000001101 11010111000010101 11010111000100101 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1 1 1 1 Indicates
Resumo do conteúdo contido na página número 18
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 27 11H 54 7B 81 3G 1 6P 28 10G 55 6B 82 2G 26N 29 9G 56 6A 83 1J 3 7P 30 11F 57 5B 84 2J 4 7N 31 11G 58 5A 85 3K 57R 32 9F 59 4A 86 3J 6 8R 33 10F 60 5C 87 2K 7 8P 34 11E 61 4B 88 1K 8 9R 35 10E 62 3A 89 2L 9 11P 36 10D 63 1H 90 3L 10 10P 37 9E 64 1A 91 1M 11 10N 38 10C 65 2B 92 1L 12 9P 39 11D 66 3B 93 3N 13 10M 40 9C 67 1C 94 3M 14 11N 419D 68 1B 951N 15 9M 42 11B
Resumo do conteúdo contido na página número 19
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Power Up Sequence in DDR-II+ SRAM DLL Constraints DDR-II+ SRAMs must be powered up and initialized in a ■ DLL uses K clock as its synchronizing input. The input must predefined manner to prevent undefined operations. During have low phase jitter, which is specified as t . KC Var power up, when the DOFF is tied HIGH, the DLL gets locked after ■ The DLL functions at frequencies down to 120 MHz. 2048 cycles of stable clock. ■ If the input clock is u
Resumo do conteúdo contido na página número 20
CY7C1166V18, CY7C1177V18 CY7C1168V18, CY7C1170V18 Current into Outputs (LOW)......................................... 20 mA Maximum Ratings Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V Exceeding maximum ratings may shorten the useful life of the Latch up Current..................................................... >200 mA device. User guidelines are not tested. Storage Temperature ................................ –65°C to + 150°C Operating Range Ambient Temperature with Power Applie
