Resumo do conteúdo contido na página número 1
07B
CY7C107B
CY7C1007B
1M x 1 Static RAM
Writing to the devices is accomplished by taking Chip Enable
Features
(CE) and Write Enable (WE) inputs LOW. Data on the input pin
• High speed (D ) is written into the memory location specified on the ad-
IN
dress pins (A through A ).
0 19
—t = 12 ns
AA
Reading from the devices is accomplished by taking Chip En-
CMOS for optimum speed/power
able (CE) LOW while Write Enable (WE) remains HIGH. Under
Automatic power-down when deselected
these conditio
Resumo do conteúdo contido na página número 2
CY7C107B CY7C1007B Current into Outputs (LOW) ........................................ 20 mA Maximum Ratings Static Discharge Voltage ........................................... >2001V (Above which the useful life may be impaired. For user guide- (per MIL-STD-883, Method 3015) lines, not tested.) Latch-Up Current..................................................... >200 mA Storage Temperature ..................................... −65°C to +150°C Ambient Temperature with Operating Range Power A
Resumo do conteúdo contido na página número 3
CY7C107B CY7C1007B Electrical Characteristics Over the Operating Range (continued) 7C107B-25 7C107B-35 7C1007B-25 7C1007B-35 Parameter Description Test Conditions Min. Max. Min. Max. Unit V Output HIGH V = Min., I = −4.0 mA 2.4 2.4 V OH CC OH Voltage V Output LOW Voltage V = Min., I = 8.0 mA 0.4 0.4 V OL CC OL V Input HIGH Voltage 2.2 V + 0.3 2.2 V + 0.3 V IH CC CC [1] V Input LOW Voltage −0.3 0.8 −0.3 0.8 V IL I Input Load Current GND < V < V −1+1 −1+1 µ A IX I CC I Output Leakage GND < V <
Resumo do conteúdo contido na página número 4
CY7C107B CY7C1007B AC Test Loads and Waveforms R1 480Ω R1 480Ω 5V 5V ALL INPUT PULSES 3.0V OUTPUT OUTPUT 90% 90% 10% 10% GND R2 R2 30 pF 5pF 255Ω 255Ω ≤ 3 ns ≤ 3 ns INCLUDING INCLUDING JIG AND JIG AND 107-4 SCOPE SCOPE (a) (b) 107-3 Equivalentto: THÉVEN IN EQUIVALENT 167Ω OUTPUT 1.73V [5] Switching Characteristics Over the Operating Range 7C107B-12 7C107B-15 7C107B-20 7C107B-25 7C107B-35 7C1007B-12 7C1007B-15 7C1007B-20 7C1007B-25 7C1007B-35 Parameter Description Min. Max. Min. Max. Min. Max.
Resumo do conteúdo contido na página número 5
CY7C107B CY7C1007B Switching Waveforms [10, 11] Read Cycle No. 1 t RC ADDRESS t AA t OHA PREVIOUS DATA VALID DATA VALID DATA OUT 107-6 [11, 12] Read Cycle No. 2 ADDRESS t RC CE t ACE t t HZCE LZCE HIGH IMPEDANCE HIGH IMPEDANCE DATA OUT DATA VALID t PD t PU V CC I CC SUPPLY 50% 50% CURRENT I SB 107-7 [13] Write Cycle No. 1 (CE Controlled) t WC ADDRESS t SA t SCE CE t t HA AW t PWE WE t t SD HD DATA IN DATA VALID HIGH IMPEDANCE DATA OUT 107-8 Notes: 9. No input may exceed V + 0.5V. CC 10. Devic
Resumo do conteúdo contido na página número 6
CY7C107B CY7C1007B Switching Waveforms (continued) [13] Write Cycle No. 2 (WE Controlled) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE t t SD HD DATA IN DATA VALID t t HZWE LZWE HIGH IMPEDANCE DATA OUT DATA UNDEFINED 107-9 Note: 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05030 Rev. ** Page 6 of 9 [+] Feedback
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CY7C107B CY7C1007B Truth Table CE WE D Mode Power OUT H X High Z Power-Down Standby (I ) SB L H Data Out Read Active (I ) CC L L High Z Write Active (I ) CC Ordering Information Speed Package Operating (ns) Ordering Code Name Package Type Range 12 CY7C107B-12VC V28 28-Lead (400-Mil) Molded SOJ Commercial CY7C1007B-12VC V28 28-Lead (300-Mil) Molded SOJ Commercial 15 CY7C107B-15VC V28 28-Lead (400-Mil) Molded SOJ Commercial CY7C1007B-15VC V28 28-Lead (300-Mil) Molded SOJ Commercial 15 CY7C107B-1
Resumo do conteúdo contido na página número 8
CY7C107B CY7C1007B 28-Lead (300-Mil) Molded SOJ V21 Document #: 38-05030 Rev. ** Page 8 of 9 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as c
Resumo do conteúdo contido na página número 9
CY7C107B CY7C1007B Document Title: CY7C107B/CY7C1007B 1M x 1 Static RAM Document Number: 38-05030 Issue Orig. of REV. ECN NO. Date Change Description of Change ** 109950 12/02/01 SZV Change from Spec number: 38-01116 to 38-05030 Document #: 38-05030 Rev. ** Page 9 of 9 [+] Feedback
