Resumo do conteúdo contido na página número 1
MuxOneNAND2G(KFM2G16Q2A-DEBx)
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
KFM2G16Q2A
KFN4G16Q2A
2Gb MuxOneNAND A-die
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ON AS "AS IS" BASIS WITHOUT GUARANTEE
Resumo do conteúdo contido na página número 2
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) Revision History Document Title MuxOneNAND Revision History Revision No. History Draft Date Remark 0.0 1. Initial issue. Jul. 13, 2007 Advanced 0.1 1. Corrected errata. Sep. 06, 2007 Preliminary 2. Chapter 3.3.1 Cold Reset Mode Operation revised. 3. Chapter 6.17 Cold Reset Timing revised. 4. Chapter 5.9 AC Characteristics for Load/Program/Erase Performance revised. 0.2 1. Corrected errata. Oct. 26, 2007 Preliminary
Resumo do conteúdo contido na página número 3
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) Revision No. History Draft Date Remark 1.3 1. Corrected errata. Dec. 16, 2008 Final 2. Chapter 2.8.18 Command Register F220h (R/W) revised. 3. Chapter 3.4.3 NAND Array Write Protection states revised. 4. Chapter 3.4.3.3 Locked-tight NAND Array Write Protection State revised. - 3 -
Resumo do conteúdo contido na página número 4
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Company MuxOneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the MuxOneNAND device. Section 3.0 provides information about device operation. Electrical specifications and tim- ing waveforms are in Sections 4.0 through 6.0. Section 7.0
Resumo do conteúdo contido na página número 5
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 1.2 Ordering Information KF X XX 16 Q 2 A - D E X X Speed Samsung 6 : 66MHz MuxOneNAND Memory 8 : 83MHz Product Line designator Device Type B : Include Bad Block M : Single Chip D : Daisy Sample N : Dual Chip Operating Temperature Range Density E : Extended Temp. (-30 °C to 85 °C) 2G : 2Gb 4G : 4Gb Package D : FBGA(Lead Free) Organization Version 16 : x16 Organization A : 2nd Generation Page Arc
Resumo do conteúdo contido na página número 6
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 1.4 Product Features Device Architecture • Design Technology: A die • Supply Voltage: 1.8V (1.7V ~ 1.95V) • Host Interface: 16 bit • 5KB Internal BufferRAM: 1KB BootRAM, 4KB DataRAM • SLC NAND Array: (2K+64)B Page Size, (128K+4K)B Block Size Device Performance • Host Interface Type: Synchronous Burst Read
Resumo do conteúdo contido na página número 7
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 1.5 General Overview MuxOneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 4KB for data buffer- ing (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of ~76ns. The devi
Resumo do conteúdo contido na página número 8
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 2.0 DEVICE DESCRIPTION 2.1 Detailed Product Description The MuxOneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a one-time-programmable block. The combination of these memory areas enable high-speed pipelining of reads from host, B
Resumo do conteúdo contido na página número 9
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 2.3 Pin Configuration 2.3.1 2Gb Product (KFM2G16Q2A) NC NC NC NC NC NC NC VSS VSS WE RP ADQ1 ADQ2 VCC ADQ3 ADQ7 ADQ14 OE ADQ6 Core VCC ADQ8 ADQ11 ADQ4 ADQ5 ADQ12 IO NC ADQ0 NC ADQ15 ADQ10 ADQ9 CLK CE ADQ13 NC NC NC NC NC AVD NC NC NC INT NC NC NC NC NC RDY NC NC NC NC NC NC NC NC NC NC NC NC NC (TOP VIEW, Balls Facing Down) 63ball FBGA MuxOneNAND Chip 63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA - 9 -
Resumo do conteúdo contido na página número 10
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 2.3.2 4Gb Product (KFN4G16Q2A) NC NC NC NC NC NC NC VSS VSS WE RP ADQ1 ADQ2 VCC ADQ3 ADQ7 ADQ14 OE ADQ6 Core VCC ADQ8 ADQ11 ADQ4 ADQ5 ADQ12 IO NC ADQ0 NC ADQ15 ADQ10 ADQ9 CLK CE ADQ13 NC NC NC NC NC AVD NC NC NC INT NC NC NC NC NC RDY NC NC NC NC NC NC NC NC NC NC NC NC NC (TOP VIEW, Balls Facing Down) 63ball FBGA MuxOneNAND Chip 63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA - 10 -
Resumo do conteúdo contido na página número 11
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 2.4 Pin Description Pin Name Type Name and Description Host Interface Multiplexed Address/Data bus - Inputs for addresses during read operation, which are for addressing BufferRAM & Register. ADQ15~ADQ0 I/O - Inputs data during program and commands for all operations, outputs data during memory array/ register read cycles. Data pins float to high-impedance when the chip is deselected or outputs are disabled. Int
Resumo do conteúdo contido na página número 12
Host Interface MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 2.5 Block Diagram BufferRAM 1st Block OTP Bootloader ADQ15~ADQ0 (Block 0) BootRAM CLK StateMachine CE DataRAM0 OE DataRAM1 NAND Flash WE Array RP Error Correction AVD Logic Internal Registers INT (Address/Command/Configuration /Status Registers) RDY OTP (One Block) 2.6 Memory Array Organization The MuxOneNAND architecture integrates several memory areas on a single chip. 2.6.1 Internal (NAND Array) Memory
Resumo do conteúdo contido na página número 13
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) Internal Memory Array Information Area Block Page Sector Main 128KB 2KB 512B Spare 4KB 64B 16B Internal Memory Array Organization Sector Main Area Spare Area 512B 16B Page Main Area Spare Area 512B Sector0 512B Sector1 512B Sector3 512B Sector2 16B Sector0 16B Sector1 16B Sector2 16B Sector3 2KB 64B Block Main Area Spare Area 2KB Page0 64B Page0 Page 0 2KB Page63 64B Page63 Page 63 128KB 4KB - 13 -
Resumo do conteúdo contido na página número 14
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 2.6.2 External (BufferRAM) Memory Organization The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering. The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes it available to the host at start up. There are two independent 2KB bi-directional data buffers, DataRAM0 and DataRAM1. These dual buffers enable the host to execute simul- taneous Read-Whi
Resumo do conteúdo contido na página número 15
{ { MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) External Memory Array Organization Main area data Spare area data (512B) (16B) BootRAM 0 Sector: (512 + 16) Byte BootRAM BootRAM 1 DataRAM 0_0 DataRAM 0_1 DataRAM0 DataRAM 0_2 DataRAM 0_3 DataRAM 1_0 DataRAM 1_1 DataRAM1 DataRAM 1_2 DataRAM 1_3 - 15 -
Resumo do conteúdo contido na página número 16
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) 2.7 Memory Map The following tables are the memory maps for the MuxOneNAND. 2.7.1 Internal (NAND Array) Memory Organization The following tables show the Internal Memory address map in word order. Page and Sector Page and Sector Block Block Address Size Block Block Address Size Address Address Block0 0000h 0000h~00FFh 128KB Block32 0020h 0000h~00FFh 128KB Block1 0001h 0000h~00FFh 128KB Block33 0021h 0000h~00FFh 12
Resumo do conteúdo contido na página número 17
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) Page and Sector Page and Sector Block Block Address Size Block Block Address Size Address Address Block64 0040h 0000h~00FFh 128KB Block96 0060h 0000h~00FFh 128KB Block65 0041h 0000h~00FFh 128KB Block97 0061h 0000h~00FFh 128KB Block66 0042h 0000h~00FFh 128KB Block98 0062h 0000h~00FFh 128KB Block67 0043h 0000h~00FFh 128KB Block99 0063h 0000h~00FFh 128KB Block68 0044h 0000h~00FFh 128KB Block100 0064h 0000h~00FFh 128KB Block69
Resumo do conteúdo contido na página número 18
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) Page and Sector Page and Sector Block Block Address Size Block Block Address Size Address Address Block128 0080h 0000h~00FFh 128KB Block160 00A0h 0000h~00FFh 128KB Block129 0081h 0000h~00FFh 128KB Block161 00A1h 0000h~00FFh 128KB Block130 0082h 0000h~00FFh 128KB Block162 00A2h 0000h~00FFh 128KB Block131 0083h 0000h~00FFh 128KB Block163 00A3h 0000h~00FFh 128KB Block132 0084h 0000h~00FFh 128KB Block164 00A4h 0000h~00FFh 128K
Resumo do conteúdo contido na página número 19
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) Page and Sector Page and Sector Block Block Address Size Block Block Address Size Address Address Block192 00C0h 0000h~00FFh 128KB Block224 00E0h 0000h~00FFh 128KB Block193 00C1h 0000h~00FFh 128KB Block225 00E1h 0000h~00FFh 128KB Block194 00C2h 0000h~00FFh 128KB Block226 00E2h 0000h~00FFh 128KB Block195 00C3h 0000h~00FFh 128KB Block227 00E3h 0000h~00FFh 128KB Block196 00C4h 0000h~00FFh 128KB Block228 00E4h 0000h~00FFh 128K
Resumo do conteúdo contido na página número 20
MuxOneNAND2G(KFM2G16Q2A-DEBx) FLASH MEMORY MuxOneNAND4G(KFN4G16Q2A-DEBx) Page and Sector Page and Sector Block Block Address Size Block Block Address Size Address Address Block256 0100h 0000h~00FFh 128KB Block288 0120h 0000h~00FFh 128KB Block257 0101h 0000h~00FFh 128KB Block289 0121h 0000h~00FFh 128KB Block258 0102h 0000h~00FFh 128KB Block290 0122h 0000h~00FFh 128KB Block259 0103h 0000h~00FFh 128KB Block291 0123h 0000h~00FFh 128KB Block260 0104h 0000h~00FFh 128KB Block292 0124h 0000h~00FFh 128K
