Resumo do conteúdo contido na página número 1
INTEGRATED CIRCUITS
DATA SHEET
TDA8567Q
4 × 25 W BTL quad car radio power
amplifier
1998 Sep 23
Product specification
Supersedes data of 1997 Feb 12
File under Integrated Circuits, IC01
Resumo do conteúdo contido na página número 2
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier FEATURES GENERAL DESCRIPTION • Requires very few external components The TDA8567Q is an integrated class-B output amplifier in a 23-lead Single-In-Line (SIL) plastic power package. • High output power It contains four amplifiers in BTL configuration, each with a • Low output offset voltage gain of 26 dB. The output power is 4 × 25 W in a 4 Ω load. • Fixed gain • Diagnostic facility (distortion, short-
Resumo do conteúdo contido na página número 3
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier BLOCK DIAGRAM V V V V MODE handbook, full pagewidth P1 P2 P3 P4 15 1 8 16 23 10 IN1 + 2 OUT1+ - 30 kΩ + 4 OUT1- - V ref 11 IN2 + 7 OUT2+ - 30 kΩ + 5 OUT2- - 12 SGND 9 TDA8567Q DIAGNOSTIC V DIAG 13 IN3 + 17 OUT3+ - 30 kΩ + 19 OUT3- - V ref 14 IN4 + 22 OUT4+ - 30 kΩ + 20 OUT4- - 3 6 18 21 MGG153 PGND1 PGND2 PGND3 PGND4 Fig.1 Block diagram. 1998 Sep 23 3
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Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier PINNING SYMBOL PIN DESCRIPTION handbook, halfpage V 1 supply voltage 1 V P1 1 P1 OUT1+ 2 output 1+ OUT1+ 2 PGND1 3 power ground 1 PGND1 3 OUT1- 4 output 1- OUT1- 4 OUT2- 5 output 2- OUT2- 5 PGND2 6 power ground 2 PGND2 6 OUT2+ 7 output 2+ OUT2+ 7 V 8 supply voltage 2 P2 V 9 diagnostic output DIAG V 8 P2 IN1 10 input 1 V 9 DIAG IN2 11 input 2 IN1 10 SGND 12 signal ground IN2 11 IN3 13 input 3 TDA8567Q
Resumo do conteúdo contido na página número 5
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier FUNCTIONAL DESCRIPTION SHORT-CIRCUIT DIAGNOSTIC The TDA8567Q contains four identical amplifiers which When a short-circuit occurs at one or more outputs to can be used for bridge applications. The gain of each ground or to the supply voltage, the output stages are amplifier is fixed at 26 dB. switched off until the short-circuit is removed and the device is switched on again, with a delay of approxima
Resumo do conteúdo contido na página número 6
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier handbook, full pagewidthshort MGG156 circuit current t short-circuit over the load V 9 10 ms V P t 50 μs Fig.5 Short-circuit waveform. 1998 Sep 23 6
Resumo do conteúdo contido na página número 7
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V supply voltage operating - 18 V P non-operating - 30 V load dump protection; - 45 V during 50 ms; t ≥ 2.5 ms r V short-circuit safe voltage - 18 V sc(safe) V reverse polarity voltage - 6V rp I non-repetitive peak output current - 10 A OSM I repetitive peak output current - 7.5
Resumo do conteúdo contido na página número 8
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier DC CHARACTERISTICS V = 14.4 V; T =25 °C; measured in Fig.7; unless otherwise specified. P amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply V supply voltage note 1 6 14.4 18 V P I total quiescent current R =∞- 230 360 mA q(tot) L Operating condition V mode select switch level 8.5 - V V 15 P I mode select switch current V = 14.4 V - 30 80 μA 15 15 V output voltage note 2 - 7.0 - V O ⎪ΔV ⎪ outpu
Resumo do conteúdo contido na página número 9
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier AC CHARACTERISTICS V = 14.4 V; R =4 Ω; f = 1 kHz; T =25°C; measured in Fig.7; unless otherwise specified. P L amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT P output power THD = 0.5% 16 19 - W o THD = 10% 21 25 - W THD = 30% 28 35 - W V = 13.2 V; THD = 0.5% - 15 - W P V = 13.2 V; THD = 10% - 21 - W P THD total harmonic distortion P =1W - 0.05 - % o V ≤ 0.6 V; note 8 - 10 - % 9 B power bandwidth TH
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Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier TEST AND APPLICATION INFORMATION V handbook, full pagewidth P +14.4 V MODE 100 nF 2200 μF V V V V P1 P2 P3 P4 15 1 8 16 23 IN1 10 input 1 + 2 OUT1+ 470 nF - 30 kΩ R = 4 Ω L + OUT1- 4 - V ref IN2 11 input 2 + 7 OUT2+ 470 nF - 30 kΩ R = 4 Ω L + OUT2- 5 - 10 kΩ +V P SGND 12 V 9 DIAG TDA8567Q diagnostic DIAGNOSTIC output IN3 13 input 3 + 17 OUT3+ 470 nF - 30 kΩ R = 4 Ω L + 19 OUT3- - V ref IN4 14 input
Resumo do conteúdo contido na página número 11
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier Test information Figures 8 to 13 have the following conditions: V = 14.4 V; R =4 Ω; f = 1 kHz; 80 kHz filter used; unless otherwise P L specified. MGD922 60 MGD921 handbook, halfpage 300 handbook, halfpage P o I P (W) (mA) 40 200 (1) (2) 20 (3) 100 0 0 81 10 12 14 168 V (V) 0 4 812 16 20 P V (V) P (1) EIAJ. (2) 10%. (3) 0.5%. Fig.8 I as a function of V . Fig.9 P as a function of V . P P o P MGD923
Resumo do conteúdo contido na página número 12
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier MGD925 MGD926 - 30 - 30 handbook, halfpage handbook, halfpage α cs SVRR (dB) (dB) - 50 - 50 (1) - 70 - 70 (2) - 90 - 90 2 3 4 5 2 3 4 5 10 10 10 10 10 10 10 10 10 10 f (Hz) f (Hz) (1) channel 1 ⇔ channel 2, channel 3 ⇔ channel 4. (2) channels 1 and 2 ⇔ channels 3 and 4. Fig.13 Channel separation as a function of Fig.12 SVRR as a function of frequency. frequency. 1998 Sep 23 12
Resumo do conteúdo contido na página número 13
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier PCB layout 111.76 handbook, full pagewidth 78.74 Pgnd 100 nF 2200 μF V P - - - out1 out 4 + + 470 nF 470 nF - - out2 out 3 + + diag in sgnd in mode 10 kΩ 12 3 4 MGK079 Dimensions in mm. Fig.14 PCB layout (component side). 1998 Sep 23 13
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Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier 111.76 handbook, full pagewidth 78.74 Pgnd 100nF 2200 μF V P - - - out 4 out1 470 nF 470 nF - - out2 out 3 mode in sgnd in diag 10 kΩ 4 3 2 1 MGK080 Dimensions in mm. Fig.15 PCB layout (soldering side). 1998 Sep 23 14 + + + +
Resumo do conteúdo contido na página número 15
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier PACKAGE OUTLINE DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) SOT411-1 non-concave D h x D E h view B: mounting base side d A 2 β A 5 A 4 E B 2 j E E 1 L 2 L L 1 3 123 L Q c v M e w M 1 Z b p m e 2 e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) (1) (1) UNIT A A A b cDdeD E e e E E E jLL L L m Q v w x β Z 2 4 5 p h 1 2 h 1 2 1 23 4.6 1.15 1.65 0.7
Resumo do conteúdo contido na página número 16
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier SOLDERING The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the Introduction specified maximum storage temperature (T ). If the stg max printed-circuit board has been pre-heated, forced cooling There is no soldering method that is ideal for all IC may be necessary immediately after soldering to keep the packages. Wave soldering is often preferre
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Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier NOTES 1998 Sep 23 17
Resumo do conteúdo contido na página número 18
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier NOTES 1998 Sep 23 18
Resumo do conteúdo contido na página número 19
Philips Semiconductors Product specification 4 × 25 W BTL quad car radio power TDA8567Q amplifier NOTES 1998 Sep 23 19
Resumo do conteúdo contido na página número 20
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