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INTEGRATED CIRCUITS
DATA SHEET
CGY2014TT
GSM/DCS/PCS power amplifier
Product specification 2000 Oct 16
Supersedes data of 2000 Apr 11
File under Integrated Circuits, IC17
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES GENERAL DESCRIPTION • Operating at 3.6 V battery supply The CGY2014TT is a dual-band GSM/DCS/PCS GaAs Monolithic Microwave Integrated Circuit (MMIC) power • Power Amplifier (PA) output power: amplifier. The circuit is specifically designed to operate at 35 dBm in GSM band and 32.5 dBm in DCS/PCS band 3.6 V battery supply voltage. • Input power: 0 dBm in GSM band and 3 dBm in The power amplifier requires onl
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT BLOCK DIAGRAM V V GND1 DD1LB DD2LB LB handbook, full pagewidth 6 8 7 9 13, 14 RFI RFO/V LB DD3LB 1, 10, 11, 12, 15 16, 19, 20 GND n.c. CGY2014TT 2 17, 18 RFI RFO/V HB DD3HB 3 4, 5 FCA180 V V DD1HB DD2HB Fig.1 Block diagram. 2000 Oct 16 3
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT PINNING SYMBOL PIN DESCRIPTION n.c. 1 not connected RFI 2 DCS/PCS power amplifier input HB V 3 DCS/PCS first stage supply voltage DD1HB V 4 DCS/PCS second stage supply voltage DD2HB V 5 DCS/PCS second stage supply voltage DD2HB V 6 GSM second stage supply voltage DD2LB V 7 GSM first stage supply voltage DD1LB GND1 8 GSM first stage ground LB RFI 9 GSM power amplifier input LB n.c. 10 not connected n.c. 11 not connected n
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MAX. UNIT V positive supply voltage 5.2 V DD T maximum operating junction temperature 150 °C j(max) T storage temperature 150 °C stg P total power dissipation note 1 2.0 W tot P GSM input power 10 dBm i(LB) P DCS/PCS input power 10 dBm i(HB) Note 1. The total power dissipation is measured under GSM pulse co
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT AC CHARACTERISTICS V = 3.5 V; T =25 °C; measured on the Philips demoboard (see Fig.8). DD amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Low band: GSM power amplifier P input power - 2 0 +2 dBm i(LB) f RF frequency range 880 - 915 MHz RF(LB) P maximum output power see Figs 3 and 4 34.5 35 - dBm o(LB)(max) η efficiency see Fig.3 50 55 - % LB P minimum output power V =0V; P = 0 dBm -- 35 - dBm o(LB)(min) DD i(LB) N
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT Performance characteristics in GSM band FCA176 FCA171 40 handbook, halfpage 37 60 handbook, halfpage (3) P o η efficiency (dBm) P o (2) (%) (1) (dBm) (1) (3) 30 (2) (3) (2) 40 35 (1) output power 20 33 20 10 0 31 0 0124 3 V (V) 800 850 900 950 1000 DD f (MHz) RF f = 900 MHz. RF(LB) P = 0 dBm. V =3V. (1) T =85 °C. i(LB) (1) T =85 °C. DD1(LB) amb amb V =3V. V =V = 3.5 V. (2) T =25 °C. DD1(LB) (2) T =25 °C. DD2(LB) D
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT APPLICATION INFORMATION V handbook, full pagewidth d23DCS 10 nF TRL2 RF DCS n.c. n.c. in 1 20 3.9 nH TRL3 RFI n.c. HB 2 19 TRL1 V RFO/V DD1HB DD3HB V 3 18 2.7 pF d1DCS 1 RF DCS 1 nF out V RFO/V pF DD2HB DD3HB 17 4 4.7 3 pF 5.6 pF pF 100 pF V (1) DD2HB n.c. 5 16 CGY2014TT V DD2LB BA891 GND 3.3 kΩ 6 15 100 pF V RFO/V DD1LB DD3LB Vpin V 7 14 d1GSM 3.3 nH 1 nF 6 pF GND1 RFO/V LB DD3LB 8 13 TRL4 TRL5 RFI n.c. LB RF GSM 9
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT handbook, full pagewidth 1 nF 1 nF 3.3 nH 3.9 nH 4.7 pF 6 pF 100 pF 1 pF 100 pF CGY2014TT 4 pF 56 pF 10 nF 3 pF 4.7 pF BA891 2.7 pF 9.1 pF 5.6 pF 3.3 kΩ 100 pF FCA175 Dimensions: approximately 19 mm × 19 mm. Fig.8 Part of layout of Philips demoboard. 2000 Oct 16 9
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT PACKAGE OUTLINE HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm SOT527-1 D E A X c y H v M heathsink side E A D Z h 20 11 (A ) A 3 2 A E h A 1 pin 1 index θ L p L 110 detail X w M b e p 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A (1) (2) (1) UNIT A A A b cD D E EeL H Lvwy Z θ 1 2 3 p h h E p max. o 0.15 0.95 0.30 0.20 6.6 4.3 4.5 3.1 6.6 0.75 0.5 8 mm 1.
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT SOLDERING If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a This text gives a very brief insight to a complex technology. turbulent wave with high upward pressure followed by a A more in-depth account of soldering ICs can be found in smooth laminar wave. our “Data Handbook IC26; I
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE (1) WAVE REFLOW BGA, LFBGA, SQFP, TFBGA not suitable suitable (2) HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable suitable (3) PLCC , SO, SOJ suitable suitable (3)(4) LQFP, QFP, TQFP not recommended suitable (5) SSOP, TSSOP, VSO not recommended suitable Notes 1. All surface mount (SMD) packages are moistu
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS STATUS Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves th
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT NOTES 2000 Oct 16 14
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Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT NOTES 2000 Oct 16 15
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