Resumo do conteúdo contido na página número 1
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D454
BGY280
UHF amplifier module
Preliminary specification 2000 Nov 15
Resumo do conteúdo contido na página número 2
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 FEATURES PINNING - SOT559A • Dual band GSM amplifier PIN DESCRIPTION • 3.6 V nominal supply voltage 1,2,3,6,9,10,11,14 Ground • 33.5 dBm output power for GSM1800 4 RF output 2 (1800 MHz) • 35.5 dBm output power for GSM900 5V (1800 MHz) S2 • Easy output power control by DC voltage. 7V (900 MHz) S1 • Internal input and output matching. 8 RF output 1 (900 MHz) 12 RF input 1 (900 MHz) APPLICATIONS 13 V (900 MHz) C1 15 V (18
Resumo do conteúdo contido na página número 3
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 CHARACTERISTICS Z =Z =50 Ω ; P =0dBm; V =V = 3.6 V; V ≤ 2.2 V; T =25 °C; t = 575 µ s; δ=2:8; S L D1,2 S1 S2 C1,2 mb p f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I leakage current V =0.2V −− 10 µ A L C1,2 I , I peak control current −− 2mA CM1 CM2 V = 2.2 V 34.5 35.5 − dBm C1 P load power GSM 900 L1 V = 2.2 V; V =3.2 V; T =25 °C
Resumo do conteúdo contido na página número 4
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT T /R conversion P =34dBm; f = 915 MHz − 25 − dB X X L1 P (925 MHz) / P (905 MHz) L1 D P =32dBm; f = 1785 MHz L2 P (1765 MHz) / P (1805 MHz) L2 D control bandwidth P = 6 to 34 dBm; P = 4 to 32 dBm; 1 1.5 − MHz L1 L2 stability V = 3.2 to 5 V; V = 0 to 2.2 V; −− −60 dBc S1,2 C P =0to3dBm; P <34.8dBm; D1,2 L1 P < 32.5 dBm; L2 VSWR ≤ 6 : 1 through all phases ruggedness V =5V;
Resumo do conteúdo contido na página número 5
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 -20 -20 H 2 H 3 (dBc) (dBc) -30 -30 1710MHz -40 -40 915MHz 915MHz 880MHz 880MHz 1785MHz 1710MHz -50 -50 1785MHz -60 -60 20 25 30 35 40 20 25 30 35 40 P (dBm) L P (dBm) L Z =Z =50 Ω ; V =3.6 V; P =0 dBm; Z =Z =50 Ω ; V =3.6 V; P =0 dBm; S L S D S L S D T =25 °C; δ =2 :8; t = 575 µ s. T =25 °C; δ =2 :8; t = 575 µ s. mb p mb p Fig.4 Second harmonic as a function of load Fig.5 Third harmonic as a function of load power; po
Resumo do conteúdo contido na página número 6
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 40 8 output AM-PM AM (deg/dB) (%) 30 6 1800MHz 20 4 900MHz 10 2 1800MHz 900MHz 0 0 0 102030 40 -10 0 10 20 30 40 P (dBm) P (dBm) L L Z =Z =50 Ω ; V =3.6 V; P =0 dBm; T =25 °C; Z =Z =50 Ω ; V =3.6 V; P =0 dBm; T =25 °C; S L S D mb S L S D mb ∆ f = 100 kHz; input amplitude modulation = 5.4%; δ =2 :8; t =575 µ s. δ =2 :8; t =575 µ s. p p Fig.8 Output amplitude modulation as a function Fig.9 Output phase at P = +0.5 dBm, re
Resumo do conteúdo contido na página número 7
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 V RF input RF output S Z Z 2 3 BGY280 GSM900 12 8 V 7 C 13 15 V 5 C 16 4 GSM1800 Z Z 1 4 RF input RF output V S Fig.11 Test circuit List of components (See Fig 10 and 11) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C , C multilayer ceramic chip capacitor 100 µ F; 40 V 1 4 C , C electrolytic capacitor 100 nF 2 3 Z , Z , Z , Z stripline; note 1 50 Ω width 2.33 mm 1 2 3 4 R1, R metal film resistor 100 Ω ; 0.6 W 2
Resumo do conteúdo contido na página número 8
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 Fig.12 PCB testcircuit 2000 Nov 15 8
Resumo do conteúdo contido na página número 9
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PACKAGE OUTLINE SOT559A Leadless surface mounted package; plastic cap; 16 terminations SOT559A e e L (4×) 1 1 Z (12×) 1 Z (12×) 6 4 L (4×) L (12×) b (12×) Z (2×) 3 12 3 Z 5 4 (4×) 16 L 2 b 4 (4×) (4×) 5 15 e 2 e Z (2×) 1 b Z 6 3 2 14 (2×) (2×) Z (6×) e 7 b (4×) 7 e 2 7 Z (6×) 13 8 b (4×) 8 8 12 11 10 9 b (4×) Z (2×) 6 2 b (4×) b (2×)b (4×) 3 1 5 D Dimensions solderresist D 1 A c E E 1 pin 1 index Z Z Z Z Z Z Z Z 1 2 3
Resumo do conteúdo contido na página número 10
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS STATUS Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserv
Resumo do conteúdo contido na página número 11
Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Norway: Box 1, Manglerud 0612, OSL
