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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD906; BGD906MI
860 MHz, 21.5 dB gain power
doubler amplifier
Product specification 2001 Nov 01
Supersedes data of 2000 Mar 28
Resumo do conteúdo contido na página número 2
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI FEATURES PINNING - SOT115J • Excellent linearity DESCRIPTION PIN • Extremely low noise BGD906 BGD906MI • Excellent return loss properties 1 input output • Silicon nitride passivation 2, 3 common common • Rugged construction 5+V +V B B • Gold metallization ensures excellent reliability. 7, 8 common common 9 output input APPLICATIONS • CATV systems operating in the 40 to 900 MHz handbook, half
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI CHARACTERISTICS Bandwidth 40 to 900 MHz; V = 24 V; T =35 °C; Z =Z =75 Ω B mb S L SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G power gain f = 50 MHz 21.2 21.5 21.8 dB p f = 900 MHz 22 22.5 23 dB SL slope straight line f = 40 to 900 MHz 0.5 1 1.5 dB FL flatness straight line f = 40 to 900 MHz --± 0.35 dB s input return losses f = 40 to 80 MHz 22 25 - dB 11 f = 80 to 160 MHz 21 24 - dB f =
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT CSO composite second 49 chs flat; V = 47 dBmV; f = 860.5 MHz -- 63 - 59 dB o m order distortion 77 chs flat; V = 44 dBmV; f = 548.5 MHz -- 74 - 65 dB o m 110 chs flat; V = 44 dBmV; f = 746.5 MHz-- 66 - 58 dB o m 129 chs flat; V = 44 dBmV; f = 860.5 MHz-- 59 - 54 dB o m 110 chs; f = 150 MHz; -- 64 - 60 dB m V = 49 dBmV at 550 MHz; note 1 o 129 chs;
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI MGS661 MGS662 - 50 52 - 50 52 handbook, halfpage handbook, halfpage V X V CTB o mod o (dB) (1) (dBmV) (dB) (dBmV) (2) (2) (1) (3) (2) - 60 48 - 60 48 (4) (3) (3) (2) (4) (4) (3) (4) - 70 44 - 70 44 (1) (1) - 80 40 - 80 40 36 36 - 90 - 90 0 200 400 600 800 0 200 400 600 800 f (MHz) f (MHz) Z =Z =75 Ω; V = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); Z =Z =75 Ω; V = 24 V; 110 chs; tilt = 9 dB (
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI MGS664 MGS665 - 50 52 - 50 52 handbook, halfpage handbook, halfpage (2) V X V CTB mod o o (1) (dB) (dBmV) (dB) (3) (dBmV) (2) (4) (3) - 60 48 - 60 48 (4) (1) - 70 44 - 70 44 - 80 40 - 80 40 36 36 - 90 - 90 0 200 400 600 800 1000 0 200 400 600 800 1000 f (MHz) f (MHz) Z =Z =75 Ω; V = 24 V; 129 chs; Z =Z =75 Ω; V = 24 V; 129 chs; S L B S L B tilt = 12.5 dB (50 to 860 MHz). tilt = 12.5 dB (50 t
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI MGS667 MGS668 - 20 - 20 handbook, halfpage handbook, halfpage CTB CSO (dB) (dB) - 30 - 30 - 40 - 40 - 50 - 50 (1) (2) (1) - 60 - 60 (2) (3) (3) - 70 - 70 40 45 50 55 40 45 50 55 V (dBmV) V (dBmV) o o Z =Z =75 Ω; V = 24 V; 129 chs; f = 859.25 MHz. Z =Z =75 Ω; V = 24 V; 129 chs; f = 860.5 MHz. S L B m S L B m (1) Typ. +3 σ. (1) Typ. +3 σ. (2) Typ. (2) Typ. (3) Typ. - 3 σ. (3) Typ. - 3 σ. Fig.
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A 2 1 23 5 78 9 A L F S W e b w M c e 1 d q y M B U 2 Q 2 B q y M B 1 y M B p U q 1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) U A d A D E L Q Z 2 1 UNITbF c eep q q q S U W w y 1 1 2 2
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS (2) STATUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary d
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI NOTES 2001 Nov 01 10
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Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI NOTES 2001 Nov 01 11
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of
