Instrukcja obsługi Fairchild 2N4123

Streszczenie treści zawartej na stronie nr. 1

2N4123
[[]]]]]]]]]]]]]]]]]]]]]]]]]]]]]
2N4123
TO-92
C
B
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V Collector-Emitter Voltage 30 V
CEO
VCBO Collector-Base Voltage 40 V
V Emitter-Base Voltage 5.0 V
EBO
I Collector Current - Continuous 200 mA
C
Operating and Storage Junction Temperature Range -55 to +1

Streszczenie treści zawartej na stronie nr. 2

2N4123 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 30 V (BR)CEO C B μ V Collector-Base Breakdown Voltage I = 10 A, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage μ 5.0 V (BR)EBO I = 10 A, I = 0 E C I Collector Cutoff Current V = 20 V, I = 0 50 nA CBO CB E I Emitter Cutoff Current V = 3.0 V, I = 0 50 nA

Streszczenie treści zawartej na stronie nr. 3

2N4123 NPN General Purpose Amplifier (continued) Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 500 V = 5V CE 0.15 β = 10 400 125 °C 125 °C 300 0.1 25 °C 200 25 °C 0.05 - 40 °C 100 - 40 °C 0 0.1 1 10 100 0.1 1 10 100 I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C C Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current 1 β = 10 V = 5V 1 CE 0

Streszczenie treści zawartej na stronie nr. 4

2N4123 θ - DEGREES NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency Noise Figure vs Source Resistance 12 12 I = 1.0 mA C V = 5.0V I = 1.0 mA CE C R = 200Ω S 10 10 I = 50 µ A I = 5.0 mA C C Ω 8 R = 1.0 k S 8 I = 50 µ A C I = 0.5 mA C 6 R = 200Ω 6 S I = 100 A µ 4 4 C 2 2 I = 100 µ A, R = 500 Ω C S 0 0 0.1 1 10 100 0.1 1 10 100 f - FREQUENCY (kHz) R - SOURCE RESISTANCE ( k Ω ) S Power D

Streszczenie treści zawartej na stronie nr. 5

2N4123 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current Fall Time vs Collector Current 500 500 I I c c I = I = I = I = B1 B2 B1 B2 10 10 T = 25°C J T = 125°C V = 40V J CC 100 100 T = 125°C J T = 25°C J 10 10 5 5 1 10 100 1 10 100 I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C C Current Gain Output Admittance 500 100 V = 10 V V = 10 V CE CE f = 1.0 kHz f = 1.0 kHz o o µ T

Streszczenie treści zawartej na stronie nr. 6

2N4123 NPN General Purpose Amplifier (continued) Test Circuits 3.0 V 275 Ω ΩΩ 300 ns Ω Ω 10.6 V Duty Cycle = = = = = 2% 10 K ΩΩ ΩΩΩ 0 C < < < < < 4.0 pF - 0.5 V 1 < < < < < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V t 10 < < < < < t < < < < < 500 µµ µµµ s 1 1 10.9 V 275 ΩΩ ΩΩΩ Duty Cycle = = = = = 2% 10 K ΩΩ ΩΩΩ 0 C < < < < < 4.0 pF 1 1N916 - 9.1 V < < < < < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit

Streszczenie treści zawartej na stronie nr. 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.  PowerTrench SyncFET™ ACEx™ FASTr™ QFET™ TinyLogic™ Bottomless™ GlobalOptoisolator™ QS™ UHC™ CoolFET™ GTO™ QT Optoelectronics™ VCX™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ Quiet Series™ 2 TM  E CMOS MICROWIRE™ SILENT SWITCHER TM EnSigna OPTOLOGIC™ SMART START™ FACT™ OPTOPLANAR™ SuperSOT™-3 PACMAN™ SuperSOT™-6 FA