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CY7C1034DV33
6-Mbit (256K X 24) Static RAM
Features Functional Description
■ High speed The CY7C1034DV33 is a high performance CMOS static RAM
organized as 256K words by 24 bits. This device has an
❐ t = 10 ns
AA
automatic power down feature that significantly reduces power
■ Low active power
consumption when deselected.
❐ I = 175 mA at 10 ns
CC
To write to the device, enable the chip (CE LOW, CE HIGH,
1 2
■ Low CMOS standby power and CE LOW) while forcing the Write Enable (WE) input LOW.
3
❐
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CY7C1034DV33 Selection Guide Description –10 Unit Maximum Access Time 10 ns Maximum Operating Current 175 mA Maximum CMOS Standby Current 25 mA Pin Configuration [1] Figure 1. 119-Ball PBGA Top View 1 2 3 4 5 6 7 A NC AA AA A NC B NC A A CE AA NC 1 C IO NC CE ACE NC IO 12 2 3 0 D IO V V V V V IO 13 DD SS SS SS DD 1 E IO V V V V V IO 14 SS DD SS DD SS 2 F IO V V V V V IO 15 DD SS SS SS DD 3 G IO V V V V V IO 16 SS DD SS DD SS 4 H IO V V V V V IO 17 DD SS SS SS DD 5 J NC V V V V V NC SS DD SS DD
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CY7C1034DV33 [2] DC Input Voltage ............................... –0.5V to V + 0.5V Maximum Ratings CC Current into Outputs (LOW) ........................................ 20 mA Exceeding maximum ratings may impair the useful life of the Static Discharge Voltage............. ...............................>2001V device. These user guidelines are not tested. (MIL-STD-883, Method 3015) Storage Temperature ................................. –65 °C to +150 °C Latch up Current.........................
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CY7C1034DV33 [4] Figure 2. AC Test Loads and Waveform 50 Ω R1 317 Ω 3.3V OUTPUT = 1.5V V TH OUTPUT Z = 50 Ω 30 pF* 0 R2 5 pF* 351 Ω *Including jig (a) and scope (b) *Capacitive Load consists of all components of the test environment All input pulses 3.0V 90% 90% 10% 10% GND Fall Time:> 1V/ns Rise Time > 1V/ns (c) AC Switching Characteristics [5] Over the operating range –10 Parameter Description Unit Min Max Read Cycle [6] V (Typical) to the First Access 100 μs t power CC Read Cycle Time
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CY7C1034DV33 AC Switching Characteristics (continued) [5] Over the operating range –10 Parameter Description Unit Min Max [9, 10] Write Cycle t Write Cycle Time 10 ns WC [3] t CE Active LOW to Write End 7ns SCE t Address Setup to Write End 7 ns AW t Address Hold from Write End 0 ns HA t Address Setup to Write Start 0 ns SA t WE Pulse Width 7 ns PWE t Data Setup to Write End 5.5 ns SD t Data Hold from Write End 0 ns HD [7] t WE HIGH to Low Z 3ns LZWE [7] t WE LOW to High Z 5ns HZWE Data Reten
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CY7C1034DV33 Switching Waveforms [13, 14] Figure 4. Read Cycle No. 1 (Address Transition Controlled) tRC RC ADDRESS t AA t OHA DATA OUT PREVIOUS DATA VALID DATA VALID [3, 14, 15] Figure 5. Read Cycle No. 2 (OE Controlled) ADDRESS t RC CE t ACE OE t HZOE t DOE t HZCE t LZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA OUT DATA VALID t LZCE t PD V t ICC CC PU SUPPLY 50% 50% CURRENT ISB [3, 16, 17] Figure 6. Write Cycle No. 1 (CE Controlled) t WC ADDRESS t SCE CE t SA t SCE t t AW HA t PWE WE t t SD
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CY7C1034DV33 Switching Waveforms (continued) [3, 16, 17] Figure 7. Write Cycle No. 2 (WE Controlled, OE HIGH During Write) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE OE t t SD HD DATA VALID IN DATA IO NOTE 18 t HZOE [3, 17] Figure 8. Write Cycle No. 3 (WE Controlled, OE LOW) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE t t SD HD DATA IO NOTE 18 DATA VALID t t LZWE HZWE Truth Table CE CE CE OE WE IO – IO Mode Power 1 2 3 0 23 H XXXX High Z Power Down Standby (I ) SB X L X X X High Z Powe
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CY7C1034DV33 Ordering Information Speed Package Operating Ordering Code Package Type (ns) Name Range 10 CY7C1034DV33-10BGXI 51-85115 119-Ball Plastic Ball Grid Array (14 x 22 x 2.4 mm) (Pb-Free) Industrial Package Diagram Figure 9. 119-Ball PBGA (14 x 22 x 2.4 mm) 51-85115-*B Document Number: 001-08351 Rev. *C Page 8 of 9 [+] Feedback
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CY7C1034DV33 Document History Page Document Title: CY7C1034DV33 6-Mbit (256K X 24) Static RAM Document Number: 001-08351 Orig. of Submission REV. ECN NO. Description of Change Change Date ** 469517 NXR See ECN New data sheet *A 499604 NXR See ECN Added note 1 for NC pins Changed I specification from 150 mA to 185 mA CC Updated Test Condition for I in DC Electrical Characteristics table CC Added note for t , t , t , t , t , t in AC Switching Characteristics ACE LZCE HZCE PU PD SCE Table on p
