Instrukcja obsługi Panasonic Schottky Barrier Diodes MA2Z785 (MA785)

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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2Z785 (MA785)
Silicon epitaxial planar type
Unit: mm
1.25±0.1 0.7±0.1
For super high speed switching
0.35±0.1
For small current rectification
1
■ Features
0 to 0.1
•
High-density mounting is possible
•
Forward current (Average) I = 100 mA rectification is
F(AV)
possible
•
Optimum for high frequency rectification because of its short
2
+0.1
0.16
0.5±0.1 –0.06
reverse recovery time t
rr
5˚
•
Low forward

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This product complies with the RoHS Directive (EU 2002/95/EC). MA2Z785 I  V I  V V  T F F R R F a 3 4 10 10 0.8 T = 125°C a 2 3 10 10 0.6 T = 125°C 75°C a 75°C 2 10 10 25°C I = 100 mA F 0.4 −20°C 25°C 1 10 0.2 −1 10 1 10 mA 3 mA −2 −1 10 10 0 −40 0 40 80 120 160 200 0 0.2 0.4 0.6 0 1020304050 60 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V R a t R 4 10 60 V = 50 V R 30 V 3 10 5 V 40 2 10 10 20 1 −1 10 0 020 40 60 −40 0 40 80 120 160 200 Ambien

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application