Streszczenie treści zawartej na stronie nr. 1
INTEGRATED CIRCUITS
DATA SHEET
TDA1519C
22 W BTL or 2 × 11 W
stereo power amplifier
Product specification 2004 Jan 28
Supersedes data of 2001 Aug 24
Streszczenie treści zawartej na stronie nr. 2
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier FEATURES GENERAL DESCRIPTION • Requires very few external components for Bridge-Tied The TDA1519C is an integrated class-B dual output Load (BTL) operation amplifier in a 9-lead plastic single in-line power package or 20-lead heatsink small outline package. • Stereo or BTL application For the TDA1519CTH (SOT418-3), the heatsink is • High output power positioned on top of the package, which allows an e
Streszczenie treści zawartej na stronie nr. 3
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply V supply voltage operating 6.0 14.4 17.5 V P non-operating -- 30 V load dump protected -- 45 V I repetitive peak output current -- 4A ORM I total quiescent current - 40 80 mA q(tot) I standby current - 0.1 100 μA stb I switch-on current -- 40 μA sw(on) Inputs ⎪Z ⎪ input impedance BTL 25 -- kΩ i stereo 50 -- kΩ Stereo applicati
Streszczenie treści zawartej na stronie nr. 4
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier BLOCK DIAGRAM handbook, full pagewidth mute switch 1 NINV C m 60 kΩ VA 4 OUT1 183 Ω power stage 18.1 kΩ V P 8 M/SS + standby switch - standby VA reference voltage 15 kΩ × 1 + mute + 3 switch - RR 15 kΩ mute reference voltage TDA1519C TDA1519CSP 18.1 kΩ power stage 183 Ω 6 OUT2 VA 9 INV C m 60 kΩ mute switch input reference power voltage signal ground ground (substrate) 2 7 5 MGL491 GND1 V GND2 P The p
Streszczenie treści zawartej na stronie nr. 5
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier PINNING PIN SYMBOL DESCRIPTION TDA1519C; TDA1519CTD TDA1519CTH TDA1519CSP NINV 1 19 19 non-inverting input GND1 2 20 20 ground 1 (signal) RR 3 1 1 supply voltage ripple rejection OUT1 4 3 3 output 1 GND2 5 5 5 ground 2 (substrate) OUT2 6 8 8 output 2 V 7 10 10 positive supply voltage P M/SS 8 11 11 mute/standby switch input INV 9 12 12 inverting input n.c. - 2, 4, 6, 7, 9 and 13 to 18 2, 4, 6, 7, 9 an
Streszczenie treści zawartej na stronie nr. 6
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier FUNCTIONAL DESCRIPTION • Low standby current (<100 μA) • Low mute/standby switching current (allows for low-cost The TDA1519C contains two identical amplifiers with supply switch) differential input stages. The gain of each amplifier is fixed at 40 dB. A special feature of this device is the • Mute condition. mute/standby switch which has the following features: LIMITING VALUES In accordance with the
Streszczenie treści zawartej na stronie nr. 7
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient; in free air 40 K/W th(j-a) TDA1519C, TDA1519CTH and TDA1519CTD R thermal resistance from junction to case; 3 K/W th(j-c) TDA1519C, TDA1519CTH and TDA1519CTD DC CHARACTERISTICS V = 14.4 V; T =25 °C; measured in circuit of Fig.6; unless otherwise specified. P amb SYMBOL PARAMETER CONDITIONS MIN.
Streszczenie treści zawartej na stronie nr. 8
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier AC CHARACTERISTICS V = 14.4 V; R =4 Ω; f = 1 kHz; T =25 °C; unless otherwise specified. P L amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Stereo application (see Fig.6) P output power note 1 o THD = 0.5 % 4 5 - W THD = 10 % 5.5 6.0 - W R =2 Ω; note 1 L THD = 0.5 % 7.5 8.5 - W THD = 10 % 10 11 - W THD total harmonic distortion P =1W - 0.1 - % o f low frequency roll-off - 3 dB; note 2 - 45 - Hz ro(
Streszczenie treści zawartej na stronie nr. 9
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT SVRR supply voltage ripple rejection on; notes 3 and 4 34 -- dB on; notes 3 and 5 48 -- dB mute; notes 3 and 6 48 -- dB standby; 80 -- dB notes 3 and 6 ⎪Z ⎪ input impedance 25 30 38 kΩ i V noise output voltage (RMS value) note 7 n(o)(rms) on; R =0Ω- 200 -μ V S on; R =10kΩ- 350 700 μV S mute; note 8 - 180 -μ V Notes 1. Output power is measured directly at
Streszczenie treści zawartej na stronie nr. 10
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier APPLICATION INFORMATION handbook, full pagewidth standby switch 100 μF V P 100 2200 μF 38 nF 7 input reference internal voltage 1/2 V P TDA1519C - + 60 kΩ 40 dB 40 dB 60 kΩ 220 nF + - 220 nF 1 9 non-inverting input inverting input 254 6 MGL493 signal power ground ground 1000 μF Fig.6 Stereo application diagram (TDA1519C). standby switch handbook, full pagewidth V P 2200 100 μF 38 7 nF input reference
Streszczenie treści zawartej na stronie nr. 11
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier MGR539 60 handbook, halfpage I q(tot) (mA) 50 40 30 02 4 8 12 160 V (V) P Fig.8 Total quiescent current as a function of the supply voltage. MGR540 30 handbook, halfpage P o (W) 20 THD = 10% 10 0.5% 0 02 4 8 12 160 V (V) P BTL application. R =4 Ω. L f = 1 kHz. i Fig.9 Output power as a function of the supply voltage. 2004 Jan 28 11
Streszczenie treści zawartej na stronie nr. 12
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier MGR541 12 handbook, halfpage THD (%) 8 4 0 - 1 2 10 110 10 P (W) o BTL application. R =4 Ω. L f = 1 kHz. i Fig.10 Total harmonic distortion as a function of the output power. MGU377 0.6 handbook, halfpage THD (%) 0.4 0.2 0 2 3 4 10 10 10 10 f (Hz) i BTL application. R =4 Ω. L P =1W. o Fig.11 Total harmonic distortion as a function of the operating frequency. 2004 Jan 28 12
Streszczenie treści zawartej na stronie nr. 13
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier PACKAGE OUTLINES SIL9P: plastic single in-line power package; 9 leads SOT131-2 non-concave D h x D E h view B: mounting base side d A 2 B E j A 1 b L c 19 e w M Q Z b p 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) A b 1 (1) (1) (1) UNIT A b cDde D E E j L Q w x Z 2 p h h max. max. 4.6 0.75 0.48 24.0 20.0 12.2 3.4 17.2 2.1 2.00 mm 2 1.1 10 2.54 6 0.25 0.03 4.4 0.60 0.38 23.6 19.6 11.8 3.
Streszczenie treści zawartej na stronie nr. 14
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier SMS9P: plastic surface mounted single in-line power package; 9 leads SOT354-1 D y d non-concave heatsink A D x h 2 heatsink E j h E Q A 1 L L p c 91 q e w M Z b p (A ) 3 A 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) (1) (1) UNIT A A A A b cDde D E E j L L Q wx y Z q 1 2 3 p h h p 4.9 0.35 4.6 0.75 0.48 24.0 20.0 12.2 3.4 7.4 3.4 2.1 2.00 3 6 mm 0.25 10 2.54 0.25 0.03 0.15 4.2 0.05
Streszczenie treści zawartej na stronie nr. 15
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier HSOP20: plastic, heatsink small outline package; 20 leads SOT397-1 E A D E 2 X c y H v M A E D 1 D 2 11 20 Q A A 2 E 1 (A ) 3 A A 1 4 pin 1 index q L p detail X 1 10 Z w M b p e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) A (1) (1) UNIT A A A A b c D D D E E E e H L Q v w yZ q 1 2 3 4 p 1 2 1 2 E p max. 0.32 13.0 6.2 2.9 14.5 1.1 1.5 2.5 8 0.3 3.3 0.1 0.53 16.0 1.1 11.1 mm 3.6 0.35 1.
Streszczenie treści zawartej na stronie nr. 16
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3 E A D x X c y E 2 H v M A E D 1 D 2 1 10 pin 1 index Q A A 2 (A ) 3 E 1 A 4 q L p detail X 20 11 Z w M b e p 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) A (1) (2) (2) A A A b c D D D E E E e H L Q v w x yZ q UNIT 2 3 4 p 1 2 1 2 E p max. +0.08 0.53 0.32 16.0 13.0 1.1 11.1 6.2 2.9 14.5 1.1 1.7 2.5 8
Streszczenie treści zawartej na stronie nr. 17
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier SOLDERING cooling) vary between 100 and 200 seconds depending on heating method. Introduction Typical reflow peak temperatures range from This text gives a very brief insight to a complex technology. 215 to 270 °C depending on solder paste material. The A more in-depth account of soldering ICs can be found in top-surface temperature of the packages should our “Data Handbook IC26; Integrated Circuit Pa
Streszczenie treści zawartej na stronie nr. 18
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. MANUAL SOLDERING Fi
Streszczenie treści zawartej na stronie nr. 19
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier 8. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 9. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm
Streszczenie treści zawartej na stronie nr. 20
Philips Semiconductors Product specification 22 W BTL or 2 × 11 W TDA1519C stereo power amplifier DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION (1) (2)(3) STATUS STATUS I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementar
