Streszczenie treści zawartej na stronie nr. 1
INTEGRATED CIRCUITS
DATA SHEET
TDA8542
2 × 1 W BTL audio amplifier
1998 Apr 01
Product specification
Supersedes data of 1997 Feb 19
File under Integrated Circuits, IC01
Streszczenie treści zawartej na stronie nr. 2
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 FEATURES APPLICATIONS • Flexibility in use • Portable consumer products • Few external components • Personal computers • Low saturation voltage of output stage • Motor-driver (servo). • Gain can be fixed with external resistors • Standby mode controlled by CMOS compatible levels GENERAL DESCRIPTION • Low standby current The TDA8542(T) is a two channel audio power amplifier for an output power of 2 × 1 W with an 8 Ω lo
Streszczenie treści zawartej na stronie nr. 3
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 BLOCK DIAGRAM V V handbook, full pagewidth CCL CCR 16 9 - 15 14 INL- OUTL- - 13 INL+ + R V CCL R - 2 20 kΩ - OUTL+ + 20 kΩ STANDBY/MUTE LOGIC TDA8542 - 10 11 INR- - OUTR- 12 INR+ + R V CCR R - 7 20 kΩ - OUTR+ + 4 SVR 20 kΩ 3 MODE STANDBY/MUTE LOGIC 5 BTL/SE 18 MGB975 LGND RGND Fig.1 Block diagram. 1998 Apr 01 3
Streszczenie treści zawartej na stronie nr. 4
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 PINNING FUNCTIONAL DESCRIPTION The TDA8542(T) is a 2 × 1 W BTL audio power amplifier SYMBOL PIN DESCRIPTION capable of delivering 2 × 1 W output power to an 8 Ω load LGND 1 ground, left channel at THD = 10% using a 5 V power supply. Using the MODE OUTL+ 2 positive loudspeaker terminal, pin the device can be switched to standby and mute left channel condition. The device is protected by an internal thermal shutdown pro
Streszczenie treści zawartej na stronie nr. 5
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V supply voltage operating - 0.3 +18 V CC V input voltage - 0.3 V + 0.3 V I CC I repetitive peak output current - 1A ORM T storage temperature non-operating - 55 +150 °C stg T operating ambient temperature - 40 +85 °C amb V AC and DC short-circuit safe voltage - 10 V psc P total power dissipation
Streszczenie treści zawartej na stronie nr. 6
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 DC CHARACTERISTICS V =5V; T =25 °C; R =8 Ω; V = 0 V; measured in test circuit Fig.3; unless otherwise specified. CC amb L MODE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V supply voltage operating 2.2 5 18 V CC I quiescent current R = ∞; note 1 - 15 22 mA q L I standby current V =V -- 10 μA stb MODE CC V DC output voltage note 2 - 2.2 - V O ⎪V - V ⎪ differential output voltage offset -- 50 mV OUT+ OUT- I , I input
Streszczenie treści zawartej na stronie nr. 7
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 AC CHARACTERISTICS V =5V; T =25 °C; R =8 Ω; f = 1 kHz; V = 0 V; measured in test circuit Fig.3; unless otherwise specified. CC amb L MODE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT P output power THD = 10% 1 1.2 - W o THD = 0.5% 0.6 0.9 - W THD total harmonic distortion P = 0.5 W - 0.15 0.3 % o G closed loop voltage gain note 1 6 - 30 dB v Z differential input impedance - 100 - kΩ i V noise output voltage note 2 -
Streszczenie treści zawartej na stronie nr. 8
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 TEST AND APPLICATION INFORMATION SE application T =25°C if not specially mentioned, V = 7.5 V, Test conditions amb CC f = 1 kHz, R =4 Ω, G = 20 dB, audio band-pass L v Because the application can be either Bridge-Tied Load 22 Hz to 22 kHz. (BTL) or Single-Ended (SE), the curves of each application The SE application diagram is illustrated in Fig.14. are shown separately. If the BTL/SE pin (pin 5) is connected to groun
Streszczenie treści zawartej na stronie nr. 9
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 BTL APPLICATION handbook, full pagewidth V CC R2 50 kΩ 100 nF 100 μF 1 μF 16 9 R1 - INL 14 - OUTL 15 10 kΩ + INL V 13 iL C3 R L 47 μF + OUTL 2 - OUTR R4 50 kΩ TDA8542 1 μF R3 INR- 11 10 kΩ + OUTR- INR V 12 10 iR SVR R 4 L + MODE OUTR 3 7 BTL/SE 5 18 R2 Gain left = 2 × ------- - R1 GND MBH798 R4 Gain right = 2 × ------- - R3 Fig.3 BTL application. MGD891 MGD890 10 30 handbook, halfpage handbook, halfpage I q THD (%) (
Streszczenie treści zawartej na stronie nr. 10
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 MGD892 MGD893 10 - 60 handbook, halfpage handbook, halfpage α cs THD (dB) (%) (1) - 70 1 (2) (1) - 80 (3) (2) - 1 10 - 90 - 2 10 - 100 2 3 5 4 2 3 4 5 10 10 10 10 10 10 10 10 10 10 f (Hz) f (Hz) V = 5 V, V = 2 V, R =8 Ω. CC o L (1) G =30dB. v (2) G =20dB. v P = 0.5 W, G = 20 dB. o v (3) G = 6 dB. v (1) V = 5 V, R =8 Ω. CC L (2) V = 9 V, R =16 Ω. CC L Fig.7 Channel separation as a function of Fig.6 THD as a function o
Streszczenie treści zawartej na stronie nr. 11
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 MGD897 MGD896 3 3 handbook, halfpage handbook, halfpage (1) P P (W) (W) 2 2 (1) (2) (2) 1 1 0 0 0 0.5 1 1.5 2 2.5 0 48 12 V (V) P (W) CC o (1) R =8 Ω. L Sine wave of 1 kHz. (2) R =16 Ω. L (1) V = 9 V, R =16 Ω. CC L (2) V = 5 V, R =8 Ω. CC L Fig.10 Worst case power dissipation as a function of V . Fig.11 P as a function of P . CC dis o MGL070 MGD898 16 10 handbook, halfpage handbook, halfpage V o V ms (V) 1 (V) 12 - 1
Streszczenie treści zawartej na stronie nr. 12
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 SE APPLICATION handbook, full pagewidth V CC R2 100 kΩ 100 nF 100 μF 1 μF 16 9 R1 INL- 14 10 kΩ C4 + - INL OUTL 13 15 V iL C3 470 μF 47 μF R L OUTR- + OUTL 2 R4 100 kΩ TDA8542 1 μF R3 - INR 11 10 kΩ + INR 12 C5 V iR OUTR- 10 SVR 4 470 μF R MODE OUTR+ L 7 3 BTL/SE 5 18 R2 Gain left = ------- - R1 GND MBH799 R4 Gain right = ------- - R3 Fig.14 Single-ended application. MGD900 MGD899 10 10 handbook, halfpage handbook, h
Streszczenie treści zawartej na stronie nr. 13
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 MGD901 - 20 handbook, halfpage MGD902 α - 20 cs handbook, halfpage (dB) SVRR - 40 (dB) (1) - 40 - 60 (2) (1) (3) (2) (4) - 80 - 60 (5) (3) - 100 2 3 4 5 10 10 10 10 10 f (Hz) - 80 2 3 4 5 V = 1 V, G =20dB. 10 10 10 10 10 o v f (Hz) (1) V = 5 V, R =32 Ω, to buffer. CC L (2) V = 7.5 V, R =4 Ω. CC L (3) V = 9 V, R =8 Ω. CC L V = 7.5 V, R =4 Ω,R =0 Ω, V = 100 mV. CC L s r (4) V = 12 V, R =16 Ω. CC L (1) G =24dB. v (5) V =
Streszczenie treści zawartej na stronie nr. 14
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 MGD905 2.4 handbook, halfpage P (W) (1) 1.6 (2) (3) 0.8 0 0 0.4 0.8 1.2 1.6 P (W) o Sine wave of 1 kHz. (1) V = 12 V, R =16 Ω. CC L (2) V = 7.5 V, R =4 Ω. CC L (3) V = 9 V, R =8 Ω. CC L Fig.21 Power dissipation as a function of P . o 1998 Apr 01 14
Streszczenie treści zawartej na stronie nr. 15
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 handbook, full pagewidth a. Top view. GND +V CC 100 μF + - OUT1 OUT1 12 kΩ 12 kΩ 100 nF 56 kΩ IN1 116 1 μF MODE P3 11 kΩ TDA8542 11 kΩ 47 μF B/S 1 μF 89 56 kΩ IN2 +OUT2 - OUT2 MBH921 b. Component side. Fig.22 Printed-circuit board layout (BTL and SE). 1998 Apr 01 15
Streszczenie treści zawartej na stronie nr. 16
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 PACKAGE OUTLINES SO16: plastic small outline package; 16 leads; body width 7.5 mm SOT162-1 D E A X c H v M A y E Z 16 9 Q A 2 A (A ) 3 A 1 pin 1 index θ L p L 1 8 detail X e w M b p 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) A (1) (1) (1) UNIT A A A b cD E eH LL Q v w y θ 1 2 3 p E p Z max. 0.30 2.45 0.49 0.32 10.5 7.6 10.65 1.1 1.1 0.9 mm 2.65 0.25 1.27 1.4 0.25 0.25 0.1
Streszczenie treści zawartej na stronie nr. 17
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 D M E A 2 A A 1 L c e Z w M b 1 (e ) 1 b 16 9 M H pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) (1) A A A (1) (1) Z 1 2 UNIT b bcE D e eL MM w 1 1 E H max. min. max. max. 1.40 0.53 0.32 21.8 6.48 3.9 8.25 9.5 mm 4.7 0.51 3.7 2.54 7.62 0.254 2.2 1.14 0.38 0.23 21.4 6.20 3.4 7.80 8.3
Streszczenie treści zawartej na stronie nr. 18
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 SOLDERING Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary Introduction between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from There is no soldering method that is ideal for all IC 215 to 250 °C. packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed Preheating is necessary to
Streszczenie treści zawartej na stronie nr. 19
Philips Semiconductors Product specification 2 × 1 W BTL audio amplifier TDA8542 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134
Streszczenie treści zawartej na stronie nr. 20
Philips Semiconductors – a worldwide company Argentina: see South America Middle East: see Italy Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Tel. +31 40 27 82785, Fax. +31 40 27 88399 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Fax. +43 160 101 1210 Tel. +64 9 849 4160, Fax. +64 9 849 7811 Belarus: Hotel Min
