Instrukcja obsługi Panasonic Schottky Barrier Diodes MA2Z7840G

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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2Z7840G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Package
■ Features
•
• Code
High-density mounting is possible
• SMini2-F3
Forward current (Average) I = 100 mA rectification is possible
F(AV)
•
• Pin Name
Optimum for high frequency rectification because of its short
1: Anode
reverse recovery time t
rr
• 2: Cathode
Low forward voltage V and good rect

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This product complies with the RoHS Directive (EU 2002/95/EC). MA2Z7840G I  V I  V V  T F F R R F a 3 4 10 10 1.0 75°C 25°C 2 3 10 10 0.8 T = 125°C a T = 125°C −20°C a 2 10 10 0.6 75°C I = 100 mA F 1 10 0.4 25°C −1 1 0.2 10 10 mA 3 mA −2 −1 10 10 0 −40 0 40 80 120 160 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V I  T R a t R F(AV) a 4 140 10 24 T = 125°C j I f = 1 MHz F T = 25°C t a p 120 20 T

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This product complies with the RoHS Directive (EU 2002/95/EC). MA2Z7840G SMini2-F3 Unit: mm 1.25 ±0.10 +0.05 0.50 ±0.05 0.13 −0.02 2 0 to 0.05 1 0.35 ±0.05 5° SKH00187AED 3 0.7 ±0.1 5° (0.15) 0.4 ±0.1 1.7 ±0.1 2.5 ±0.2

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application