Instrukcja obsługi NXP Semiconductors SiGeC BFU725F

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SiGeC microwave NPN
transistor BFU725F
A perfect match up to 20 GHz
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave
NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise.
All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz.
Key features
Ñ Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) The NPN microwave transistor BFU725F delivers an unbeatable
Ñ Hig

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Parameter Symbol Conditions Value Collector-emitter breakdown BV I = 1 mA; I = 0 3.2 V CEO C B voltage Maximum collector current I 40 mA C(max) Transition frequency f V = 2 V; I = 25 mA; f = 2 GHz 68 GHz T CE C V = 2 V; I = 5 mA; f = 1.8 GHz; Γ = Γ 0.4 dB CE C s opt V = 2 V; I = 5 mA; f = 2.4 GHz; Γ = Γ 0.45 dB CE C s opt Noise figure NF V = 2 V; I = 5 mA; f = 5.8 GHz; Γ = Γ 0.7 dB CE C s opt V = 2 V; I = 5 mA; f = 12 GHz; Γ = Γ 1.0 dB CE C s opt V = 2 V; I = 25 mA; f = 1.8 GHz 26.6 dB CE C