Summary of the content on the page No. 1
CY7C1410AV18, CY7C1425AV18
CY7C1412AV18, CY7C1414AV18
36-Mbit QDR™-II SRAM 2-Word
Burst Architecture
Features Functional Description
■ Separate independent read and write data ports The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and
CY7C1414AV18 are 1.8V Synchronous Pipelined SRAMs,
❐ Supports concurrent transactions
equipped with QDR-II architecture. QDR-II architecture consists
■ 250 MHz clock for high bandwidth
of two separate ports: the read port and the write port to access
■ 2-word burst on
Summary of the content on the page No. 2
2M x 8 Array 2M x 9 Array 2M x 8 Array 2M x 9 Array CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Logic Block Diagram (CY7C1410AV18) 8 D [7:0] Write Write 21 Address A Reg Reg (20:0) Register 21 Address A (20:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 16 V 8 REF 8 CQ Reg. Reg. Control WPS Logic 8 8 NWS Q Reg. [1:0] [7:0] 8 Logic Block Diagram (CY7C1425AV18) 9 D [8:0] Write Write 21 Address A Reg Reg (20:0) Register 21 Address A (20:0) Register RPS K Control CLK
Summary of the content on the page No. 3
1M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Logic Block Diagram (CY7C1412AV18) 18 D [17:0] Write Write 20 Address A Reg Reg (19:0) Register 20 Address A (19:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 36 V 18 REF 18 CQ Reg. Reg. Control WPS Logic 18 18 BWS Q Reg. [1:0] [17:0] 18 Logic Block Diagram (CY7C1414AV18) 36 D [35:0] Write Write 19 Address A Reg Reg (18:0) Register 19 Address A (18:0) Register
Summary of the content on the page No. 4
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Pin Configuration [1] The pin configuration for CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and CY7C1414AV18 follow. 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1410AV18 (4M x 8) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/72M A WPS NWS K NC/144M RPS AA CQ 1 B NC NC NC A NC/288M K NWS ANC NC Q3 0 C NC NC NC V AAA V NC NC D3 SS SS D NC D4 NC V V V V V NC NC NC SS SS SS SS SS E NC NC Q4 V V V V V NC D2 Q2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ
Summary of the content on the page No. 5
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Pin Configuration (continued) [1] The pin configuration for CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and CY7C1414AV18 follow. 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1412AV18 (2M x 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/144M A WPS BWS K NC/288M RPS A NC/72M CQ 1 B NC Q9 D9 A NC K BWS ANC NC Q8 0 C NC NC D10 V AAA V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12 D12 V
Summary of the content on the page No. 6
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Pin Definitions Pin Name IO Pin Description D Input- Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. [x:0] CY7C1410AV18 - D Synchronous [7:0] CY7C1425AV18 - D [8:0] CY7C1412AV18 - D [17:0] CY7C1414AV18 - D [35:0] WPS Input- Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the writ
Summary of the content on the page No. 7
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Pin Definitions (continued) Pin Name IO Pin Description CQ Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 23. CQ Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is syn
Summary of the content on the page No. 8
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Write Operations Functional Overview Write operations are initiated by asserting WPS active at the The CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and rising edge of the positive input clock (K). On the same K clock CY7C1414AV18 are synchronous pipelined Burst SRAMs with a rise, the data presented to D is latched and stored into the [17:0] read port and a write port. The read port is dedicated to read are both lower 18-bit write data register,
Summary of the content on the page No. 9
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 synchronized to the output clock (C/C) of the QDR-II. In single Programmable Impedance clock mode, CQ is generated with respect to K and CQ is An external resistor, RQ, must be connected between the ZQ pin generated with respect to K. The timing for the echo clocks is on the SRAM and V to allow the SRAM to adjust its output SS shown in the Switching Characteristics on page 23. driver impedance. The value of RQ must be 5x the value of the int
Summary of the content on the page No. 10
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Truth Table [2, 3, 4, 5, 6, 7] The truth table for CY7C1410AV18, CY7C1425AV18, CY7C1412AV18, and CY7C1414AV18 follows. Operation K RPS WPS DQ DQ L-H X L D(A + 0) at K(t) ↑ D(A + 1) at K(t) ↑ Write Cycle: Load address on the rising edge of K; input write data on K and K rising edges. Read Cycle: L-H L X Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ Load address on the rising edge of K; wait one and a half cycle; read data on C and C rising
Summary of the content on the page No. 11
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Write Cycle Descriptions [2, 8] The write cycle description table for CY7C1425AV18 follows. BWS K K Comments 0 L L–H – During the Data portion of a write sequence, the single byte (D ) is written into the device. [8:0] ) is written into the device. L – L–H During the Data portion of a write sequence, the single byte (D [8:0] H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into t
Summary of the content on the page No. 12
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions can be serially loaded into the instruction These SRAMs incorporate a serial boundary scan Test Access register. This register is loaded when it is placed between the TDI Port (TAP) in the FBGA package. This part is fully compliant with and TDO pins, as shown in TAP Controller Block Diagram on IEEE Standard #1149.1-1900. The TAP operates using JEDEC page 15. U
Summary of the content on the page No. 13
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 IDCODE BYPASS The IDCODE instruction loads a vendor-specific, 32-bit code into When the BYPASS instruction is loaded in the instruction register the instruction register. It also places the instruction register and the TAP is placed in a Shift-DR state, the bypass register is between the TDI and TDO pins and shifts the IDCODE out of the placed between the TDI and TDO pins. The advantage of the device when the TAP controller enters the Shift-D
Summary of the content on the page No. 14
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 TAP Controller State Diagram [9] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 0 SHIFT-DR SHIFT-IR 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05615 Rev. *E P
Summary of the content on the page No. 15
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 TAP Controller Block Diagram 0 Bypass Register 2 1 0 Selection Selection TDI TDO Instruction Register Circuitry Circuitry 31 30 29 . . 2 1 0 Identification Register . 108 . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [10, 11, 12] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH Output HIGH Voltage I = −100 μA1.6 V V OH2 OH
Summary of the content on the page No. 16
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 TAP AC Switching Characteristics [13, 14] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capt
Summary of the content on the page No. 17
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Identification Register Definitions Value Instruction Field Description CY7C1410AV18 CY7C1425AV18 CY7C1412AV18 CY7C1414AV18 Revision Number 000 000 000 000 Version number. (31:29) Cypress Device ID 11010011010000111 11010011010001111 11010011010010111 11010011010100111 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1111 Indi
Summary of the content on the page No. 18
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P29 9G 57 5B85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N32 9F 60 5C88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43
Summary of the content on the page No. 19
~ ~ CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 DLL Constraints Power Up Sequence in QDR-II SRAM ■ DLL uses K clock as its synchronizing input. The input must QDR-II SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . KC Var predefined manner to prevent undefined operations. ■ The DLL functions at frequencies down to 120 MHz. Power Up Sequence ■ If the input clock is unstable and the DLL is enabled, then the ■ Apply power and drive DOFF eith
Summary of the content on the page No. 20
CY7C1410AV18, CY7C1425AV18 CY7C1412AV18, CY7C1414AV18 Current into Outputs (LOW) .........................................20 mA Maximum Ratings Static Discharge Voltage (MIL-STD-883, M. 3015) . > 2001V Exceeding maximum ratings may impair the useful life of the Latch-up Current ................................................... > 200 mA device. These user guidelines are not tested. Storage Temperature ..................................–65°C to +150°C Operating Range Ambient Temperature with Pow
