Summary of the content on the page No. 1
CY7C1310BV18, CY7C1910BV18
CY7C1312BV18, CY7C1314BV18
18-Mbit QDR™-II SRAM 2-Word
Burst Architecture
Features Functional Description
■ Separate independent read and write data ports The CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and
CY7C1314BV18 are 1.8V Synchronous Pipelined SRAMs,
❐ Supports concurrent transactions
equipped with QDR™-II architecture. QDR-II architecture
■ 250 MHz clock for high bandwidth
consists of two separate ports: the read port and the write port to
■ 2-word burst on all a
Summary of the content on the page No. 2
1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Logic Block Diagram (CY7C1310BV18) 8 D [7:0] Write Write 20 Address A Reg Reg (19:0) Register 20 Address A (19:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 16 V 8 REF 8 CQ Reg. Reg. Control WPS Logic 8 8 NWS Q Reg. [1:0] [7:0] 8 Logic Block Diagram (CY7C1910BV18) 9 D [8:0] Write Write 20 Address A Reg Reg (19:0) Register 20 Address A (19:0) Register RPS K Control CLK
Summary of the content on the page No. 3
512K x 18 Array 256K x 36 Array 512K x 18 Array 256K x 36 Array CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Logic Block Diagram (CY7C1312BV18) 18 D [17:0] Write Write 19 Address A Reg Reg (18:0) Register 19 Address A (18:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 36 V 18 REF 18 CQ Reg. Reg. Control WPS Logic 18 18 BWS Q Reg. [1:0] [17:0] 18 Logic Block Diagram (CY7C1314BV18) 36 D [35:0] Write Write 18 Address A Reg Reg (17:0) Register 18 Address A (17:0) Regi
Summary of the content on the page No. 4
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Pin Configuration [1] The pin configuration for CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1310BV18 (2M x 8) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/72M A WPS NWS K NC/144M RPS A NC/36M CQ 1 B NC NC NC A NC/288M K NWS ANC NC Q3 0 C NC NC NC V AAA V NC NC D3 SS SS D NC D4 NC V V V V V NC NC NC SS SS SS SS SS E NC NC Q4 V V V V V NC D2 Q2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC
Summary of the content on the page No. 5
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Pin Configuration (continued) [1] The pin configuration for CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1312BV18 (1M x 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/144M NC/36M WPS BWS K NC/288M RPS A NC/72M CQ 1 B NC Q9 D9 A NC K BWS ANC NC Q8 0 C NC NC D10 V AAA V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12
Summary of the content on the page No. 6
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Pin Definitions Pin Name IO Pin Description D Input- Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. [x:0] CY7C1310BV18 - D Synchronous [7:0] CY7C1910BV18 - D [8:0] CY7C1312BV18 - D [17:0] CY7C1314BV18 - D [35:0] WPS Input- Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the writ
Summary of the content on the page No. 7
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Pin Definitions (continued) Pin Name IO Pin Description CQ Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks is shown in the Switching Characteristics on page 23. CQ Echo Clock CQ Referenced with Respect to C. This is a free - running clock and is syn
Summary of the content on the page No. 8
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Write Operations Functional Overview Write operations are initiated by asserting WPS active at the The CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and rising edge of the positive input clock (K). On the same K clock CY7C1314BV18 are synchronous pipelined Burst SRAMs rise, the data presented to D is latched and stored into the [17:0] equipped with a read port and a write port. The read port is are both lower 18-bit write data register, provided
Summary of the content on the page No. 9
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 synchronized to the output clock (C/C) of the QDR-II. In single Programmable Impedance clock mode, CQ is generated with respect to K and CQ is An external resistor, RQ, must be connected between the ZQ pin generated with respect to K. The timing for the echo clocks is on the SRAM and V to allow the SRAM to adjust its output SS shown in the Switching Characteristics on page 23. driver impedance. The value of RQ must be 5x the value of the int
Summary of the content on the page No. 10
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Truth Table [2, 3, 4, 5, 6, 7] The truth table for CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follows. Operation K RPS WPS DQ DQ L-H X L D(A + 0) at K(t) ↑ D(A + 1) at K(t) ↑ Write Cycle: Load address on the rising edge of K; input write data on K and K rising edges. Read Cycle: L-H L X Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ Load address on the rising edge of K; wait one and a half cycle; read data on C and C rising
Summary of the content on the page No. 11
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Write Cycle Descriptions [2, 8] The write cycle description table for CY7C1910BV18 follows. BWS K K Comments 0 L L–H – During the data portion of a write sequence, the single byte (D ) is written into the device. [8:0] ) is written into the device. L – L–H During the data portion of a write sequence, the single byte (D [8:0] H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into t
Summary of the content on the page No. 12
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions can be serially loaded into the instruction These SRAMs incorporate a serial boundary scan Test Access register. This register is loaded when it is placed between the TDI Port (TAP) in the FBGA package. This part is fully compliant with and TDO pins, as shown in TAP Controller Block Diagram on IEEE Standard #1149.1-1900. The TAP operates using JEDEC page 15. U
Summary of the content on the page No. 13
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 IDCODE BYPASS The IDCODE instruction loads a vendor-specific, 32-bit code into When the BYPASS instruction is loaded in the instruction register the instruction register. It also places the instruction register and the TAP is placed in a Shift-DR state, the bypass register is between the TDI and TDO pins and shifts the IDCODE out of the placed between the TDI and TDO pins. The advantage of the device when the TAP controller enters the Shift-D
Summary of the content on the page No. 14
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 TAP Controller State Diagram [9] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 0 SHIFT-DR SHIFT-IR 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05619 Rev. *F P
Summary of the content on the page No. 15
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 TAP Controller Block Diagram 0 Bypass Register 2 1 0 Selection Selection TDI TDO Instruction Register Circuitry Circuitry 31 30 29 . . 2 1 0 Identification Register . 106 . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [10, 11, 12] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH Output HIGH Voltage I = −100 μA1.6 V V OH2 OH
Summary of the content on the page No. 16
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 TAP AC Switching Characteristics [13, 14] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capt
Summary of the content on the page No. 17
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Identification Register Definitions Value Instruction Field Description CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 Revision Number 000 000 000 000 Version number. (31:29) Cypress Device ID 11010011010000101 11010011010001101 11010011010010101 11010011010100101 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1111 Indi
Summary of the content on the page No. 18
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 27 11H 54 7B 81 3G 1 6P 28 10G 55 6B 82 2G 26N 29 9G 56 6A 83 1J 3 7P 30 11F 57 5B 84 2J 4 7N 31 11G 58 5A 85 3K 57R 32 9F 59 4A 86 3J 6 8R 33 10F 60 5C 87 2K 7 8P 34 11E 61 4B 88 1K 8 9R 35 10E 62 3A 89 2L 9 11P 36 10D 63 1H 90 3L 10 10P 37 9E 64 1A 91 1M 11 10N 38 10C 65 2B 92 1L 12 9P 39 11D 66 3B 93 3N 13 10M 40 9C 67 1C 94 3M 14 11N 41 9D 68 1B 95 1N 15 9M
Summary of the content on the page No. 19
~ ~ CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 DLL Constraints Power Up Sequence in QDR-II SRAM ■ DLL uses K clock as its synchronizing input. The input must QDR-II SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . KC Var predefined manner to prevent undefined operations. ■ The DLL functions at frequencies down to 120 MHz. Power Up Sequence ■ If the input clock is unstable and the DLL is enabled, then the ■ Apply power and drive DOFF eith
Summary of the content on the page No. 20
CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 Current into Outputs (LOW) ........................................ 20 mA Maximum Ratings Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Exceeding maximum ratings may impair the useful life of the Latch up Current.................................................... > 200 mA device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Operating Range Ambient Temperature with Pow
