Philips SA7016 user manual

Summary of the content on the page No. 1

INTEGRATED CIRCUITS
SA7016
1.3GHz low voltage fractional-N
synthesizer
Product specification 1999 Nov 04
Supersedes data of 1999 Apr 20






Summary of the content on the page No. 2

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 GENERAL DESCRIPTION The SA7016 BICMOS device integrates programmable dividers, 1 16 PON charge pumps and a phase comparator to implement a LOCK phase-locked loop. The device is designed to operate from 3 NiCd 2 15 STROBE TEST cells, in pocket phones, with low current and nominal 3 V supplies. 3 14 V DATA DD The synthesizer operates at VCO input frequencies up to 1.3 GHz. 4 13 GND CLOCK The synthesizer

Summary of the content on the page No. 3

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 GND 4 13 22–BIT SHIFT CLOCK 2–BIT SHIFT PUMP 14 REGISTER REGISTER CURRENT DATA SETTING 10 PUMP CONTROL R 15 SET BIAS STROBE ADDRESS DECODER LATCH 9 V DDCP LOAD SIGNALS LATCH COMP 5 RFin+ 8 MAIN DIVIDER PHP 6 PHASE RFin– DETECTOR AMP 7 GND CP LATCH 1 12 LOCK REF REFERENCE in+ DIVIDER REF in– 11 16 PON 2 TEST 3 V DD SR01506 Figure 2. Block Diagram PINNING SYMBOL PIN DESCRIPTION LOCK 1 Lock detect output

Summary of the content on the page No. 4

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT V Digital supply voltage –0.3 +5.5 V DD V Analog supply voltage –0.3 +5.5 V DDCP ΔV –V Difference in voltage between V V (V ≥ V ) –0.3 +2.8 V DDCP DD DDCP and DD DDCP DD V Voltage at pins 1, 2, 5, 6, 11 to 16 –0.3 V + 0.3 V n DD V Voltage at pin 8, 9 –0.3 V + 0.3 V 1 DDCP ΔV Difference in

Summary of the content on the page No. 5

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 CHARACTERISTICS V = V = +3.0V, T = +25°C; unless otherwise specified. DDCP DD amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply; pins 3, 9 V Digital supply voltage 2.7 – 5.5 V DD V Analog supply voltage V = V 2.7 – 5.5 V DDCP DDCP DD I Synthesizer operational total supply current V = +3.0V – 6.2 7.3 mA DDTotal DD I Total supply current in power-down mode logic levels 0 or VDD – 1 TBD μA Sta

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Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Phase noise (R = 7.5 kΩ, CP=00) SET Synthesizer’s contribution to close-in phase noise GSM – –90 – dBc/Hz of 900 MHz RF signal at 1 kHz offset. f = 13MHz, TCXO, REF f = 1MHz COMP indicative, not tested (f) Synthesizer’s contribution to close-in phase noise TDMA – –85 – dBc/Hz of 800 MHz RF signal at 1 kHz offset. f = 19.44MHz, TCXO, REF f = 240kHz COM

Summary of the content on the page No. 7

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 fractional accumulator and is nulled by the fractional compensation FUNCTIONAL DESCRIPTION charge pump. Main Fractional-N divider The reloading of a new main divider ratio is synchronized to the The RFin inputs drive a pre-amplifier to provide the clock to the first state of the main divider to avoid introducing a phase disturbance. divider stage. For single ended operation, the signal should be fed t

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Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 V CC P–TYPE “1” P D CHARGE PUMP Q REF DIVIDER f REF CLK R R I τ PH “1” R D N–TYPE AUX/MAIN CLK CHARGE PUMP DIVIDER N Q X GND f REF R X τ P τ N I PH SR02103 Figure 5. Phase Detector Structure with Timing 1999 Nov 04 8

Summary of the content on the page No. 9

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 Main Output Charge Pumps and Fractional Compensation Currents (see Figure 6) The compensation is done by sourcing a small current, I , see COMP The main charge pumps on pins PHP and PHI are driven by the Figure 7, that is proportional to the fractional error phase. For proper main phase detector and the charge pump current values are fractional compensation, the area of the fractional compensation det

Summary of the content on the page No. 10

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 Charge pump currents CP0 I I PHP PHP–SU 0 3xI 15xl SET SET 1 1xl 5xl SET SET NOTES: 1. I =V /R : bias current for charge pumps. SET SET SET 2. I is the total current at pin PHP during speed up condition. PHP–SU Lock Detect Power-down mode The output LOCK maintains a logic ‘1’ when the auxiliary phase The power-down signal can be either hardware (PON) or software detector ANDed with the main phase dete

Summary of the content on the page No. 11

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 data is latched into different working registers or temporary Serial programming bus registers. In order to fully program the synthesizer, 3 words must be The serial input is a 3-wire input (CLOCK, STROBE, DATA) to sent: C, B, and A. Table 1 shows the format and the contents of program all counter divide ratios, fractional compensation DAC, each word. The D word is normally used for testing purposes.

Summary of the content on the page No. 12

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 Data format Table 1. Format of programmed data LAST IN MSB SERIAL PROGRAMMING FORMAT FIRST IN LSB p23 p22 p21 p20 ../.. ../.. p1 p0 Table 2. A word, length 24 bits LAST IN MSB LSB FIRST IN Address fmod Fractional-N Main Divider ratio Spare 0 0 FM NF2 NF1 NF0 N15 N14 N13 N12 N11 N10 N9 N8 N7 N6 N5 N4 N3 N2 N1 N0 SP1 SP2 0 0 1 0 0 0 1 0 0 0 1 0 0 0 1 1 0 0 0 0 0 0 Default: A word select Fixed to 00. F

Summary of the content on the page No. 13

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 800 600 I = 206.67 A SET 600 I = 165.33 A 400 SET V = 3.0 V 400 dd I = 103.33 A SET I = 165.33 μA SET 200 TEMP = 85°C 200 I = 51.67 A SET TEMP = 25°C 0 0 TEMP = –40°C –200 I = 51.67 A SET –200 –400 I = 103.33 A SET I = 165.33 A SET –600 –400 I = 206.67 A SET –800 –600 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 COMPLIANCE VOLTAGE

Summary of the content on the page No. 14

Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 1500 1000 I = 206.67 A SET 800 1000 I = 165.33 A SET 600 I = 103.33 A TEMP = 85C SET 500 400 TEMP = 25C I = 51.67 A SET 200 TEMP = –40C 0 0 I = 51.67 A –200 SET –500 I = 103.33 A SET –400 I = 165.33 A SET –600 –1000 I = 206.67 A SET –800 –1500 –1000 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 COMPLIANCE VOLTAGE (V) COMPLIANCE

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Philips Semiconductors Product specification 1.3GHz low voltage fractional-N synthesizer SA7016 8.5 8 7.5 7 6.5 TEMP = +85C 6 TEMP = +25C TEMP = –40C 5.5 2.5 3 3.5 4 4.5 5 5.5 6 SUPPLY VOLTAGE (V) SR01931 Figure 21. Current Supply Over V DD 1999 Nov 04 15 I TOTAL (mA)

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Philips Semiconductors Product specification 1.3GHz low voltage fractional-N frequency SA7016 synthesizer TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1 1999 Nov 04 16

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Philips Semiconductors Product specification 1.3GHz low voltage fractional-N frequency SA7016 synthesizer NOTES 1999 Nov 04 17

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Philips Semiconductors Product specification 1.3GHz low voltage fractional-N frequency SA7016 synthesizer Data sheet status [1] Data sheet Product Definition status status Objective Development This data sheet contains the design target or goal specifications for product development. specification Specification may change in any manner without notice. Preliminary Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. specification Phil