ページ1に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18
CY7C1513KV18, CY7C1515KV18
72-Mbit QDR™-II SRAM 4-Word
Burst Architecture
Features Configurations
■ Separate Independent Read and Write Data Ports CY7C1511KV18 – 8M x 8
❐ Supports concurrent transactions
CY7C1526KV18 – 8M x 9
■ 333 MHz Clock for High Bandwidth
CY7C1513KV18 – 4M x 18
CY7C1515KV18 – 2M x 36
■ 4-word Burst for Reducing Address Bus Frequency
■ Double Data Rate (DDR) Interfaces on both Read and Write
Functional Description
Ports (data transferred at 666 MH
ページ2に含まれる内容の要旨
2M x 8 Array 2M x 9 Array 2M x 8 Array 2M x 9 Array 2M x 8 Array 2M x 9 Array 2M x 8 Array 2M x 9 Array CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Logic Block Diagram (CY7C1511KV18) 8 D [7:0] Write Write Write Write 21 Address A Reg Reg Reg Reg (20:0) Register 21 Address A (20:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 32 V 16 REF 8 CQ Reg. Reg. Control WPS 8 Logic 8 8 16 NWS Q Reg. [1:0] [7:0] 8 Logic Block Diagram (CY7C1526KV18) 9 D [8:0] Write Write Write
ページ3に含まれる内容の要旨
1M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array 1M x 18 Array 512K x 36 Array CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Logic Block Diagram (CY7C1513KV18) 18 D [17:0] Write Write Write Write 20 Address A Reg Reg Reg Reg (19:0) Register 20 Address A (19:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 72 V 36 REF CQ 18 Reg. Reg. Control 18 WPS Logic 18 18 36 BWS Q Reg. [17:0] [1:0] 18 Logic Block Diagram (CY7C1515KV18) 36
ページ4に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Pin Configuration [1] The pin configurations for CY7C1511KV18, CY7C1526KV18, CY7C1513KV18, and CY7C1515KV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1511KV18 (8M x 8) 1 2 3 4 5 6 7 8 9 10 11 A CQ AA WPS NWS K NC/144M RPS AA CQ 1 B NC NC NC A NC/288M K NWS ANC NC Q3 0 C NC NC NC V ANC A V NC NC D3 SS SS D NC D4 NC V V V V V NC NC NC SS SS SS SS SS E NC NC Q4 V V V V V NC D2 Q2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD
ページ5に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Pin Configuration (continued) [1] The pin configurations for CY7C1511KV18, CY7C1526KV18, CY7C1513KV18, and CY7C1515KV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1513KV18 (4M x 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/144M A WPS BWS K NC/288M RPS AA CQ 1 B NC Q9 D9 A NC K BWS ANC NC Q8 0 C NC NC D10 V ANC A V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12 D12 V V
ページ6に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Pin Definitions Pin Name I/O Pin Description D Input- Data Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active. [x:0] Synchronous CY7C1511KV18 − D [7:0] CY7C1526KV18 − D [8:0] CY7C1513KV18 − D [17:0] CY7C1515KV18 − D [35:0] WPS Input- Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects
ページ7に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Pin Definitions (continued) Pin Name I/O Pin Description CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the Switching Characteristics on page 24. CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synch
ページ8に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 , or K or K when from the rising edge of the output clock (C or C Functional Overview in single clock mode). To maintain the internal logic, each read access must be allowed to complete. Each read access consists The CY7C1511KV18, CY7C1526KV18, CY7C1513KV18, of four 18-bit data words and takes two clock cycles to complete. CY7C1515KV18 are synchronous pipelined Burst SRAMs with a Therefore, read accesses to the device cannot be initiated on r
ページ9に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Single Clock Mode Programmable Impedance The CY7C1511KV18 is used with a single clock that controls An external resistor, RQ, must be connected between the ZQ pin both the input and output registers. In this mode the device on the SRAM and V to allow the SRAM to adjust its output SS recognizes only a single pair of input clocks (K and K) that control driver impedance. The value of RQ must be 5X the value of the both the input and output regi
ページ10に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Application Example Figure 1 shows four QDR-II used in an application. Figure 1. Application Example SRAM #1 R = 250ohms SRAM #4 R = 250ohms ZQ ZQ R W B R W B CQ/CQ# CQ/CQ# Vt P P W P P W D Q D Q S S S S S S R A # CC# K K# # # A # # # CC# K K# DATA IN DATA OUT Vt Address Vt R RPS# BUS WPS# MASTER BWS# (CPU CLKIN/CLKIN# or Source K ASIC) Source K# Delayed K Delayed K# R R = 50ohms Vt = Vddq/2 Truth Table [2, 3, 4, 5, 6, 7] The truth table for
ページ11に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Write Cycle Descriptions [2, 10] The write cycle description table for CY7C1511KV18 and CY7C1513KV18 follows. BWS / BWS / 0 1 K Comments K NWS NWS 0 1 L L L–H – During the data portion of a write sequence: CY7C1511KV18 − both nibbles (D ) are written into the device. [7:0] CY7C1513KV18 − both bytes (D ) are written into the device. [17:0] L L – L-H During the data portion of a write sequence: CY7C1511KV18 − both nibbles (D ) are written
ページ12に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Write Cycle Descriptions [2, 10] The write cycle description table for CY7C1515KV18 follows. BWS BWS BWS BWS K K Comments 0 1 2 3 LLLL L–H – During the data portion of a write sequence, all four bytes (D ) are written into [35:0] the device. LLLL – L–H During the data portion of a write sequence, all four bytes (D ) are written into [35:0] the device. L H H H L–H – During the data portion of a write sequence, only the lower byte (D ) is w
ページ13に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions are serially loaded into the instruction These SRAMs incorporate a serial boundary scan Test Access register. This register is loaded when it is placed between the TDI Port (TAP) in the FBGA package. This part is fully compliant with and TDO pins, as shown in TAP Controller Block Diagram on IEEE Standard #1149.1-2001. The TAP operates using JEDEC page 16. Upon
ページ14に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 IDCODE PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection The IDCODE instruction loads a vendor-specific, 32-bit code into of another boundary scan test operation. the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the The shifting of data for the SAMPLE and PRELOAD phases can device when the TA
ページ15に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 TAP Controller State Diagram [11] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 0 SHIFT-DR SHIFT-IR 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 0 Note 11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-00435 R
ページ16に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 TAP Controller Block Diagram 0 Bypass Register 2 1 0 Selection Selection TDI TDO Instruction Register Circuitry Circuitry 31 30 29 . . 2 1 0 Identification Register . 108 . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [12, 13, 14] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH Output HIGH Voltage I = −100 μA1.6 V V OH2 OH
ページ17に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 TAP AC Switching Characteristics [15, 16] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capt
ページ18に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Identification Register Definitions Value Instruction Field Description CY7C1511KV18 CY7C1526KV18 CY7C1513KV18 CY7C1515KV18 Revision Number 000 000 000 000 Version number. (31:29) Cypress Device ID 11010011011000100 11010011011001100 11010011011010100 11010011011100100 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1111 Indi
ページ19に含まれる内容の要旨
CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P29 9G 57 5B85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N32 9F 60 5C88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43
ページ20に含まれる内容の要旨
~ ~ CY7C1511KV18, CY7C1526KV18 CY7C1513KV18, CY7C1515KV18 PLL Constraints Power Up Sequence in QDR-II SRAM ■ PLL uses K clock as its synchronizing input. The input must QDR-II SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . KC Var predefined manner to prevent undefined operations. ■ The PLL functions at frequencies down to 120 MHz. Power Up Sequence ■ If the input clock is unstable and the PLL is enabled, then the ■ Apply power and drive DOFF eith
