ページ1に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18
CY7C1512KV18, CY7C1514KV18
72-Mbit QDR™-II SRAM 2-Word
Burst Architecture
Features Configurations
■ Separate Independent Read and Write Data Ports CY7C1510KV18 – 8M x 8
❐ Supports concurrent transactions
CY7C1525KV18 – 8M x 9
■ 333 MHz Clock for High Bandwidth
CY7C1512KV18 – 4M x 18
CY7C1514KV18 – 2M x 36
■ 2-word Burst on all Accesses
■ Double Data Rate (DDR) Interfaces on both Read and Write
Functional Description
Ports (data transferred at 666 MHz) at 333 MHz
The
ページ2に含まれる内容の要旨
4M x 8 Array 4M x 9 Array 4M x 8 Array 4M x 9 Array CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Logic Block Diagram (CY7C1510KV18) 8 D [7:0] Write Write 22 Address A Reg Reg (21:0) Register 22 Address A (21:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 16 V 8 REF 8 CQ Reg. Reg. Control WPS Logic 8 8 NWS Q Reg. [1:0] [7:0] 8 Logic Block Diagram (CY7C1525KV18) 9 D [8:0] Write Write 22 Address A Reg Reg (21:0) Register 22 Address A (21:0) Register RPS K Control CLK
ページ3に含まれる内容の要旨
2M x 18 Array 1M x 36 Array 2M x 18 Array 1M x 36 Array CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Logic Block Diagram (CY7C1512KV18) 18 D [17:0] Write Write 21 Address A Reg Reg (20:0) Register 21 Address A (20:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 36 V 18 REF 18 CQ Reg. Reg. Control WPS Logic 18 18 BWS Q Reg. [1:0] [17:0] 18 Logic Block Diagram (CY7C1514KV18) 36 D [35:0] Write Write 20 Address A Reg Reg (19:0) Register 20 Address A (19:0) Register RPS
ページ4に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Pin Configuration [1] The pin configurations for CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1510KV18 (8M x 8) 1 2 3 4 5 6 7 8 9 10 11 A CQ AA WPS NWS K NC/144M RPS AA CQ 1 B NC NC NC A NC/288M K NWS ANC NC Q3 0 C NC NC NC V AAA V NC NC D3 SS SS D NC D4 NC V V V V V NC NC NC SS SS SS SS SS E NC NC Q4 V V V V V NC D2 Q2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS
ページ5に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Pin Configuration (continued) [1] The pin configurations for CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18 follow. 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1512KV18 (4M x 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/144M A WPS BWS K NC/288M RPS AA CQ 1 B NC Q9 D9 A NC K BWS ANC NC Q8 0 C NC NC D10 V AAA V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12 D12 V V V V
ページ6に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Pin Definitions Pin Name I/O Pin Description D Input- Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. [x:0] Synchronous CY7C1510KV18 − D [7:0] CY7C1525KV18 − D [8:0] CY7C1512KV18 − D [17:0] CY7C1514KV18 − D [35:0] WPS Input- Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the wri
ページ7に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Pin Definitions (continued) Pin Name I/O Pin Description CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the QDR-II. In single clock mode, CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 23. CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to
ページ8に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 lower 18-bit write data register, provided BWS are both Functional Overview [1:0] asserted active. On the subsequent rising edge of the negative input clock (K), the address is latched and the information The CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and presented to D is also stored into the write data register, CY7C1514KV18 are synchronous pipelined Burst SRAMs with a [17:0] provided BWS are both asserted active. The 36 bits of data read po
ページ9に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Echo Clocks PLL Echo clocks are provided on the QDR-II to simplify data capture These chips use a PLL that is designed to function between on high speed systems. Two echo clocks are generated by the 120 MHz and the specified maximum clock frequency. During QDR-II. CQ is referenced with respect to C and CQ is referenced power up, when the DOFF is tied HIGH, the PLL is locked after with respect to C. These are free running clocks and are synchr
ページ10に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Truth Table [2, 3, 4, 5, 6, 7] The truth table for CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18 follow. Operation K RPS WPS DQ DQ Write Cycle: L-H X L D(A + 0) at K(t) ↑ D(A + 1) at K(t) ↑ Load address on the rising edge of K; input write data on K and K rising edges. Read Cycle: L-H L X Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ Load address on the rising edge of K; wait one and a half cycle; read data on C and C rising e
ページ11に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Write Cycle Descriptions [2, 8] The write cycle description table for CY7C1525KV18 follow. BWS K K 0 L L–H – During the data portion of a write sequence, the single byte (D ) is written into the device. [8:0] ) is written into the device. L – L–H During the data portion of a write sequence, the single byte (D [8:0] H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into the device
ページ12に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions are serially loaded into the instruction These SRAMs incorporate a serial boundary scan Test Access register. This register is loaded when it is placed between the TDI Port (TAP) in the FBGA package. This part is fully compliant with and TDO pins, as shown in TAP Controller Block Diagram on IEEE Standard #1149.1-2001. The TAP operates using JEDEC page 15. Upon
ページ13に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 IDCODE BYPASS The IDCODE instruction loads a vendor-specific, 32-bit code into When the BYPASS instruction is loaded in the instruction register the instruction register. It also places the instruction register and the TAP is placed in a Shift-DR state, the bypass register is between the TDI and TDO pins and shifts the IDCODE out of the placed between the TDI and TDO pins. The advantage of the device when the TAP controller enters the Shift-D
ページ14に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 TAP Controller State Diagram [9] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 0 SHIFT-DR SHIFT-IR 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-00436 Rev
ページ15に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 TAP Controller Block Diagram 0 Bypass Register 2 1 0 Selection Selection TDI TDO Instruction Register Circuitry Circuitry 31 30 29 . . 2 1 0 Identification Register . 108 . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [10, 11, 12] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH Output HIGH Voltage I = −100 μA1.6 V V OH2 OH
ページ16に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 TAP AC Switching Characteristics [13, 14] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capt
ページ17に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Identification Register Definitions Value Instruction Field Description CY7C1510KV18 CY7C1525KV18 CY7C1512KV18 CY7C1514KV18 Revision Number 000 000 000 000 Version number. (31:29) Cypress Device ID 11010011010000100 11010011010001100 11010011010010100 11010011010100100 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1111 Indi
ページ18に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P29 9G 57 5B85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N32 9F 60 5C88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43
ページ19に含まれる内容の要旨
~ ~ CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 PLL Constraints Power Up Sequence in QDR-II SRAM ■ PLL uses K clock as its synchronizing input. The input must QDR-II SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . KC Var predefined manner to prevent undefined operations. ■ The PLL functions at frequencies down to 120 MHz. Power Up Sequence ■ If the input clock is unstable and the PLL is enabled, then the ■ Apply power and drive DOFF eith
ページ20に含まれる内容の要旨
CY7C1510KV18, CY7C1525KV18 CY7C1512KV18, CY7C1514KV18 Maximum Ratings Exceeding maximum ratings may impair the useful life of the Current into Outputs (LOW) ........................................ 20 mA device. These user guidelines are not tested. Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Storage Temperature ................................. –65°C to +150°C Latch up Current.................................................... > 200 mA Ambient Temperature with Power Applied.. –55
