ページ1に含まれる内容の要旨
CY7C1215H
1-Mbit (32K x 32) Pipelined Sync SRAM
[1]
Features Functional Description
• Registered inputs and outputs for pipelined operation The CY7C1215H SRAM integrates 32K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
• 32K × 32 common I/O architecture
counter for internal burst operation. All synchronous inputs are
• 3.3V core power supply (V )
DD gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
•
ページ2に含まれる内容の要旨
CY7C1215H Selection Guide 166 MHz 133 MHz Unit Maximum Access Time 3.5 4.0 ns Maximum Operating Current 240 225 mA Maximum CMOS Standby Current 40 40 mA Pin Configuration 100-Pin TQFP Top View NC 1 80 NC DQ DQ C 2 79 B DQ C 3 78 DQ B V DDQ V 4 77 DDQ V SSQ 5 76 V SSQ DQ C 6 75 DQ B DQ BYTE C BYTE B C DQ 7 74 B DQ C 8 73 DQ B DQ C 9 72 DQ B V V SSQ 10 71 SSQ V DDQ 11 70 V DDQ DQ C 12 69 DQ B DQ C 13 68 DQ B NC 14 67 V SS V DD CY7C1215H NC 15 66 NC 16 65 V DD V SS 17 64 ZZ DQ DQ D 18 63 A DQ D 19
ページ3に含まれる内容の要旨
CY7C1215H Pin Definitions Name I/O Description A , A , A Input- Address Inputs used to select one of the 32K address locations. Sampled at the rising edge 0 1 Synchronous of the CLK if ADSP or ADSC is active LOW, and CE , CE , and CE are sampled active. A , A 1 2 3 1 0 feed the 2-bit counter. BW , BW Input- Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM. A B Synchronous Sampled on the rising edge of CLK. BW , BW C D GW Input- Global Write Enable
ページ4に含まれる内容の要旨
CY7C1215H signals. The CY7C1215H provides Byte Write capability that Functional Overview is described in the Write Cycle Descriptions table. Asserting All synchronous inputs pass through input registers controlled the Byte Write Enable input (BWE) with the selected Byte by the rising edge of the clock. All data outputs pass through Write (BW ) input, will selectively write to only the desired [A:D] output registers controlled by the rising edge of the clock. bytes. Bytes not selected during a By
ページ5に含まれる内容の要旨
CY7C1215H Linear Burst Address Table Interleaved Burst Address Table (MODE = GND) (MODE = Floating or V ) DD First Second Third Fourth First Second Third Fourth Address Address Address Address Address Address Address Address A , A A , A A , A A , A A , A A , A A , A A , A 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 00 01 10 11 00 01 10 11 01 10 11 00 01 00 11 10 10 11 00 01 10 11 00 01 11 00 01 10 11 10 01 00 ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min. Max. Unit I Sleep
ページ6に含まれる内容の要旨
CY7C1215H [2, 3] Truth Table for Read/Write Function GW BWE BW BW BW BW D C B A Continue Write Next L H X X X Suspend Write Current L X X X H Suspend Write Current L H X X X ZZ “Sleep” None H XXXX Read H H XXXX Read H L HHHH Write Byte A – DQ H L HHH L A Write Byte B – DQ HL H H L H B Write Bytes B, A H L H H L L Write Byte C – DQ HL HL H H C Write Bytes C, A H L H L H L Write Bytes C, B H L H L L H Write Bytes C, B, A H L H L L L Write Byte D – DQ H L L HHH D Write Bytes D, A H L L H H L Write
ページ7に含まれる内容の要旨
CY7C1215H DC Input Voltage ................................... –0.5V to V + 0.5V Maximum Ratings DD Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guide- Static Discharge Voltage........................................... >2001V lines, not tested.) (per MIL-STD-883, Method 3015) Storage Temperature ................................–65°C to + 150°C Latch-up Current.....................................................
ページ8に含まれる内容の要旨
CY7C1215H [9] Capacitance 100 TQFP Parameter Description Test Conditions Max. Unit C Input Capacitance T = 25°C, f = 1 MHz, 5 pF IN A V = 3.3V. DD C Clock Input Capacitance 5 pF CLK V = 2.5V DDQ C Input/Output Capacitance 5 pF I/O [9] Thermal Resistance 100 TQFP Parameter Description Test Conditions Package Unit Θ Thermal Resistance Test conditions follow standard test methods and 30.32 °C/W JA (Junction to Ambient) procedures for measuring thermal impedance, per EIA/JESD51 Θ Thermal Resistanc
ページ9に含まれる内容の要旨
CY7C1215H [10, 11] Switching Characteristics Over the Operating Range 166 MHz 133 MHz Parameter Description Min. Max Min. Max Unit [12] t V (Typical) to the First Access 1 1ms POWER DD Clock t Clock Cycle Time 6.0 7.5 ns CYC t Clock HIGH 2.5 3.0 ns CH t Clock LOW 2.5 3.0 ns CL Output Times t Data Output Valid after CLK Rise 3.5 4.0 ns CO t Data Output Hold after CLK Rise 1.5 1.5 ns DOH [13, 14, 15] t Clock to Low-Z 0 0 ns CLZ [13, 14, 15] t Clock to High-Z 3.5 4.0 ns CHZ t OE LOW to Output Valid
ページ10に含まれる内容の要旨
CY7C1215H Switching Waveforms [16] Read Cycle Timing t CYC CLK t t CL CH t t ADS ADH ADSP t t ADS ADH ADSC t t AS AH ADDRESS A1 A2 A3 Burst continued with t t WES WEH new base address GW, BWE, BW[A:D] Deselect t t CES CEH cycle CE t t ADVS ADVH ADV ADV suspends burst. OE t t OEV CO t t OEHZ t t CHZ OELZ DOH t CLZ Q(A1) Q(A2) Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) Data Out (Q) High-Z t CO Burst wraps around to its initial state Single READ BURST READ DON’T CARE UNDEFINED Note: 16. On th
ページ11に含まれる内容の要旨
CY7C1215H Switching Waveforms (continued) [16, 17] Write Cycle Timing t CYC CLK t t CL CH t t ADS ADH ADSP ADSC extends burst t t ADS ADH t t ADS ADH ADSC t t AS AH ADDRESS A1 A2 A3 Byte write signals are ignored for first cycle when t t ADSP initiates burst WEH WES BWE, BW[A :D] t t WES WEH GW t t CEH CES CE t t ADVS ADVH ADV ADV suspends burst OE t t DH DS Data In (D) D(A1) D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) High-Z t OEHZ Data Out (Q) BURST READ Single WRI
ページ12に含まれる内容の要旨
CY7C1215H Switching Waveforms (continued) [16, 18, 19] Read/Write Cycle Timing t CYC CLK t t CH CL t t ADS ADH ADSP ADSC t t AS AH ADDRESS A1 A2 A3 A4 A5 A6 t t WES WEH BWE, BW[A:D] t t CES CEH CE ADV OE t t t CO DS DH t OELZ Data In (D) High-Z D(A3) D(A5) D(A6) t t OEHZ CLZ Data Out (Q) Q(A1) Q(A2) Q(A4) Q(A4+1) Q(A4+2) Q(A4+3) High-Z Back-to-Back READs Single WRITE BURST READ Back-to-Back WRITEs DON’T CARE UNDEFINED Notes: 18. The data bus (Q) remains in High-Z following a Write cycle unless
ページ13に含まれる内容の要旨
CY7C1215H Switching Waveforms (continued) [20, 21] ZZ Mode Timing CLK t t ZZ ZZREC ZZ t ZZI I SUPPLY I DDZZ t RZZI ALL INPUTS DESELECT or READ Only (except ZZ) Outputs (Q) High-Z DON’T CARE Notes: 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05666 Rev. *B Page 13 of 15 [+] Feedback
ページ14に含まれる内容の要旨
CY7C1215H Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed Package Operating (MHz) Ordering Code Diagram Package Type Range 100 CY7C1215H-100AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1215H-100AXI Industrial 133 CY7C1215H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1
ページ15に含まれる内容の要旨
CY7C1215H Document History Page Document Title: CY7C1215H 1-Mbit (32K x 32) Pipelined Sync SRAM Document Number: 38-05666 Orig. of REV. ECN NO. Issue Date Change Description of Change ** 343896 See ECN PCI New Data Sheet *A 430678 See ECN NXR Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Added 2.5VI/O option Changed Three-State to Tri-State Included Maximum Ratings for V relative to GND DDQ Modified “Input Load” to “Inpu
