ページ1に含まれる内容の要旨
CY62147DV30
4-Mbit (256K x 16) Static RAM
vanced circuit design to provide ultra-low active current. This
Features
®
is ideal for providing More Battery Life™ (MoBL ) in portable
• Temperature Ranges applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
— Industrial: –40°C to +85°C
power consumption. The device can also be put into standby
— Automotive-A: –40°C to +85°C
mode reducing power consumption by more than 99% when
dese
ページ2に含まれる内容の要旨
CY62147DV30 [2, 3, 4] Pin Configuration VFBGA (Top View) 44 TSOP II (Top View) 1 2 3 4 5 6 44 A 1 A 4 5 A OE A A NC A 2 43 A BLE 0 1 2 A 3 6 3 42 A A 2 7 4 41 A OE 1 A A I/O BHE CE I/O B 4 8 3 0 40 5 A BHE 0 39 6 CE BLE 38 I/O I/O A A C 7 I/O I/O I/O I/O 0 15 5 9 10 6 1 2 37 I/O 8 I/O 1 14 36 I/O 9 I/O 2 13 Vcc V A I/O A I/O SS 7 D 35 11 17 3 I/O 10 I/O 3 12 34 11 V V CC SS 33 Vss V 12 V V DNU A SS CC I/O I/O E CC 16 12 4 I/O 13 32 I/O 4 11 31 I/O I/O 5 14 10 F A A I/O I/O I/O I/O I/O 30 15
ページ3に含まれる内容の要旨
CY62147DV30 Output Current into Outputs (LOW)............................. 20 mA Maximum Ratings Static Discharge Voltage........................................... >2001V (Above which the useful life may be impaired. For user guide- (per MIL-STD-883, Method 3015) lines, not tested.) Latch-up Current...................................................... >200 mA Storage Temperature .................................–65°C to +150°C Operating Range Ambient Temperature with Power Applied...........
ページ4に含まれる内容の要旨
CY62147DV30 [10] Capacitance (for all packages) Parameter Description Test Conditions Max. Unit C Input Capacitance T = 25°C, f = 1 MHz, 10 pF IN A V = V CC CC(typ) C Output Capacitance 10 pF OUT [10] Thermal Resistance Parameter Description Test Conditions VFBGA TSOP II Unit Θ Thermal Resistance Still Air, soldered on a 3 × 4.5 inch, four-layer 72 75.13 °C/W JA (Junction to Ambient) printed circuit board Θ Thermal Resistance 8.86 8.95 °C/W JC (Junction to Case) [10] AC Test Loads and Waveform
ページ5に含まれる内容の要旨
CY62147DV30 [14] Switching Characteristics Over the Operating Range [11] 45 ns 55 ns 70 ns Parameter Description Min. Max. Min. Max. Min. Max. Unit Read Cycle t Read Cycle Time 45 55 70 ns RC t Address to Data Valid 45 55 70 ns AA t Data Hold from Address Change 10 10 10 ns OHA t CE LOW to Data Valid 45 55 70 ns ACE t OE LOW to Data Valid 25 25 35 ns DOE [15] t OE LOW to LOW Z 5 5 5 ns LZOE [15, 16] t OE HIGH to High Z 15 20 25 ns HZOE [15] t CE LOW to Low Z 10 10 10 ns LZCE [15, 16] t CE HIG
ページ6に含まれる内容の要旨
CY62147DV30 Switching Waveforms [18, 19] Read Cycle 1 (Address Transition Controlled) t RC ADDRESS t AA t OHA DATA OUT PREVIOUS DATA VALID DATA VALID [19, 20] Read Cycle No. 2 (OE Controlled) ADDRESS t RC CE t PD t t HZCE ACE OE t HZOE t DOE BHE/BLE t LZOE t HZBE t DBE t LZBE HIGH IMPEDANCE HIGH IMPEDANCE DATA OUT DATA VALID t LZCE t PU V I CC CC SUPPLY 50% 50% CURRENT I SB Notes: 18. The device is continuously selected. OE, CE = V , BHE and/or BLE = V . IL IL 19. WE is HIGH for read cycle.
ページ7に含まれる内容の要旨
CY62147DV30 Switching Waveforms (continued) [17, 21, 22] Write Cycle No. 1 (WE Controlled) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE t BW BHE/BLE OE t SD t HD DATA I/O NOTE23 DATA IN t HZOE [17, 21, 22] Write Cycle No. 2 (CE Controlled) t WC ADDRESS t SCE CE t SA t t AW HA t PWE WE t BW BHE/BLE OE t SD t HD DATA I/O DATA IN NOTE 23 t HZOE Notes: 21. Data I/O is high impedance if OE = V . IH 22. If CE goes HIGH simultaneously with WE = V , the output remains in a high-impedance state. IH
ページ8に含まれる内容の要旨
CY62147DV30 Switching Waveforms (continued) [22] Write Cycle No. 3 (WE Controlled, OE LOW) t WC ADDRESS t SCE CE t BW BHE/BLE t t AW HA t t SA PWE WE t HD t SD NOTE 23 DATAI/O DATA IN t HZWE t LZWE [22] Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) t WC ADDRESS CE t SCE t t AW HA t BW BHE/BLE t SA t PWE WE t HZWE t t HD SD DATA I/O DATA NOTE 23 IN t LZWE Document #: 38-05340 Rev. *F Page 8 of 12 [+] Feedback
ページ9に含まれる内容の要旨
CY62147DV30 Truth Table CE WE OE BHE BLE Inputs/Outputs Mode Power H X X X X High Z Deselect/Power-Down Standby (I ) SB X X X H H High Z Deselect/Power-Down Standby (I ) SB L H L L L Data Out (I/O –I/O ) Read Active (I ) O 15 CC L H L H L Data Out (I/O –I/O ); Read Active (I ) O 7 CC I/O –I/O in High Z 8 15 L H L L H Data Out (I/O –I/O ); Read Active (I ) 8 15 CC I/O –I/O in High Z 0 7 L H H L L High Z Output Disabled Active (I ) CC L H H H L High Z Output Disabled Active (I ) CC L H H L H
ページ10に含まれる内容の要旨
CY62147DV30 Package Diagram 48-ball VFBGA (6 x 8 x 1 mm) (51-85150) BOTTOM VIEW TOP VIEW A1 CORNER Ø0.05 M C Ø0.25 M C A B A1 CORNER Ø0.30±0.05(48X) 1 2346 5 65 4 3 2 1 A A B B C C D D E E F F G G H H 1.875 A A B 0.75 6.00±0.10 3.75 B 6.00±0.10 0.15(4X) 51-85150-*D SEATING PLANE C Document #: 38-05340 Rev. *F Page 10 of 12 [+] Feedback 0.25 C 8.00±0.10 0.26 MAX. 0.55 MAX. 0.21±0.05 1.00 MAX 0.10 C 8.00±0.10 5.25 0.75 2.625
ページ11に含まれる内容の要旨
CY62147DV30 Package Diagram (continued) 44-Pin TSOP II (51-85087) 51-85087-*A MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05340 Rev. *F Page 11 of 12 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no re
ページ12に含まれる内容の要旨
CY62147DV30 Document History Page ® Document Title:CY62147DV30 MoBL 4-Mbit (256K x 16) Static RAM Document Number: 38-05340 Orig. of REV. ECN NO. Issue Date Change Description of Change ** 127481 06/17/03 HRT New Data Sheet *A 131010 01/23/04 CBD Changed from Advance to Preliminary *B 213252 See ECN AJU Changed from Preliminary to Final Added 70 ns speed bin Modified footnote 7 to include ramp time and wait time Modified input and output capacitance values to 10 pF Modified Thermal Resistance
