ページ1に含まれる内容の要旨
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PRODUCT SELECTION GUIDE
Displays, LEDs, Memory and Storage 2H 2013
CONTACTS DISPLA S STORAGE MCPS FLASh - SSD DRAM
ページ2に含まれる内容の要旨
Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers — from ultra-mobile notebooks to powerful servers — and in a wide range of handheld devices such as smartphones and tablets. Samsung also delivers the industry’s widest line of storage products from the consumer to the enterprise level. These include optical disk drives as well as flash storage, s
ページ3に含まれる内容の要旨
Pages 4–12 DRAM samsung.com/dram • DDR4 SDRAM • Mobile DRAM • DDR3 SDRAM • Graphics SDRAM • DDR2 SDRAM • DRAM Ordering Information • DDR SDRAM Pages 13–17 FLASH - SSD samsung.com/flash • SLC Flash • Solid State Drives (SSD) • MLC Flash • Flash Products Ordering Information • microSD Cards • Industrial Cards • eMMC MULTI-CIP P h ACKAGES Page 18–19 samsung.com/mcp • eMMC + LPDDR2 • eMMC + LPDDR3 • eMMC + MDDR STORAGE Pages 20–21 samsung.com/flash-ssd • Solid State Drives samsungodd.com • Opti
ページ4に含まれる内容の要旨
DDR4 SDRAM REGISTERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 8GB 1.2V 1Gx 72 M393A1G40DB0-CPB 4Gb (1G x4) * 18 Lead Free & Halogen Free, Flip Chip 2133 1 3Q'13 16GB 1.2V 2Gx72 M393A2G40DB0-CPB 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 2133 2 3Q'13 Notes: Register is not fixed yet NA = DDR4-1866 (14-14-14) QB = DDR4-2133(16-16-16) PB = DDR4-2133(15-15-15) DDR4 SDRAM LOAD REDUCED MODULES Density Voltage Organizat
ページ5に含まれる内容の要旨
DDR3 SDRAM LOAD REDUCED REGISTERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 16GB 1.35V 2Gx72 M386B2K70DM0-YH90 4Gb DDP (1G x4) * 36 Lead Free & Halogen Free 1333 4 Now M386B4G70BM0-YK0(3/4)/ 8Gb DDP (2G x4) * 36 Lead Free & Halogen Free 1333/1600/1866 4 Now CMA(3/4) 32GB 1.35V/1.5V 4Gx72 M386B4G70DM0-YK0(3/4)/ 8Gb DDP (2G x4) * 36 Lead Free & Halogen Free 1600/1866 4 Q3'13 CMA(3/4) M386B8G70BO0-YH94/CK04 4Gb QDP (4G x4) * 36 Lead F
ページ6に含まれる内容の要旨
DDR3 SDRAM UNBUFFERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 1GB 1.5V 128Mx64 M378B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 8 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1 Now M378B5673GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 16 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 2 Now 2GB 1.5V 256Mx64 M378B5773DH0-C(F8/H9/K0/MA) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now M378B5773QB0-CK0/MA 2Gb (2
ページ7に含まれる内容の要旨
DDR3 SDRAM SODIMM MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 1GB 1.5V 128Mx64 M471B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 8 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1 Now 2GB 1.5V 256Mx64 M471B5673GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 16 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 2 Now M471B5773DH0-C(F8/H9/K0/MA) 2Gb (256M x8) * 8 Lead Free & Halogen Free 1066/1333/1600/1866 1 Now 4GB 1.5V 512Mx64 M471B5273DH0-C(
ページ8に含まれる内容の要旨
DDR3 SDRAM COMPONENTS Density Voltage Organization Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production Lead Free & Halogen Free, 256M x4 K4B1G0446G-BC(F8/H9/K0/MA) 78 Ball -FBGA 1066/1333/1600/1866 7.5x11mm Now Flip Chip Lead Free & Halogen Free, 1Gb 1.5V 128M x8 K4B1G0846G-BC(F8/H9/K0/MA) 78 Ball -FBGA 1066/1333/1600/1866 7.5x11mm Now Flip Chip Lead Free & Halogen Free, 128M x16 K4B1G1646G-BC(F8/H9/K0/MA/NB) 96 Ball -FBGA 1066/1333/1600/1866/2133 7.5x13.3mm Now Flip Chip
ページ9に含まれる内容の要旨
DDR SDRAM COMPONENTS Density Organization Part Number # Pins - Package Speed (Mbps) K4H510438J-LCB3/B0 66-TSOP 266/333 128Mx4 K4H510438J-BCCC/B3 60-FBGA 333/400 512Mb K4H510838J-LCCC/B3 66-TSOP 333/400 64Mx8 K4H510838J-BCCC/B3 60-FBGA 333/400 32Mx16 K4H511638J-LCCC/B3 66-TSOP 333/400 Notes: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3) MOBILE DRAM COMPONENTS Density Type Organization Part Number Package Power Production 32Mx16
ページ10に含まれる内容の要旨
COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power DRAM Package Type DRAM Type Generation Density Interface (VDD, VDDQ) Bit Organization Number of Internal Banks 08: x8 1. Memory (K) 9. Package Type 15: x16 (2CS) DDR2 DRAM 2. DRAM: 4 16: x16 L: TSOP II (Lead-free & Halogen-free) 26: x4 Stack (JEDEC Standard) 3. DRAM Type H: FBGA (Lead-free & Halogen-free) 27: x8 Stack (JEDEC Standard) F: FBGA for 64Mb DDR (Lead-free & Halo
ページ11に含まれる内容の要旨
COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power DRAM Package Type DRAM Type Generation Density Interface (VDD, VDDQ) Bit Organization Number of Internal Banks XDR DRAM DDR2 SDRAM 09: 0.9ns (1100MHz) J: BOC(LF) P: BOC CC: DDR2-400 (200MHz @ CL=3, tRCD=3, 45: 4.5ns (222MHz) tRP=3) 1 : 1.0ns (1000MHz) Mobile DRAM D5: DDR2-533 (266MHz @ CL=4, tRCD=4, 50/5A: 5.0ns (200MHz) Leaded/Lead Free tRP=4) 1 : 1.1ns (900MHz) G/A: 52balls F
ページ12に含まれる内容の要旨
MODULE DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X SAMSUNG Memory AMB Vendor DIMM Speed Data bits Temp & Power DRAM Component Type PCB Revision Depth Package Number of Banks Generation Bit Organization 1. Memory Module: M 5. Depth 9. Package 09: 8M (for 128Mb/512Mb) E: FBGA QDP (Lead-free & Halogen-free) 2. DIMM Type 17: 16M (for 128Mb/512Mb) G: FBGA 3: DIMM 16: 16M H: FBGA (Lead-free & Halogen-free) 4: SODIMM 28: 128M J: FBGA DDP (Lead-free) 29: 128M (
ページ13に含まれる内容の要旨
SLC FLASH Density Technology Part Number Package Type Org. Vol(V) Status K9WAG08U1E-SCB0* TSOP1-LF/HF x8 3.3 Sampling now 16Gb QDP 21nm SDR K9WAG08U1E-SIB0* TSOP1-LF/HF, i-temp x8 3.3 Sampling now K9K8G08U0E-SCB0* TSOP1-LF/HF x8 3.3 Sampling now 8Gb DDP 21nm SDR K9K8G08U0E-SIB0* TSOP1-LF/HF, i-temp x8 3.3 Sampling now K9F4G08U0E-SCB0* TSOP1 LF/HF x8 3.3 Sampling now 4Gb 21nm SDR K9F4G08U0E-SIB0* TSOP1 LF/HF, i-temp x8 3.3 Sampling now K9F1G08U0E-SCB0* TSOP1-LF/HF x8 3.3 CS Sept'13 K9F1G08U0E-SIB
ページ14に含まれる内容の要旨
microSD FLASH CARDS Application Density Part Number Class Ultra High Speed (UHS) 2GB MMAUR02G3ACA-QNJ00 CL4 4GB MMBTR04G3CCA-QNJ00 CL4 UHS 104 8GB MMCTR08G3ACH-QNJ00 CL4 UHS 104 uSD Cards 16GB MMCTR16GUACJ-SAC00 CL10 UHS 104 32GB MMCTR32GUACJ-SAC00 CL10 UHS 104 64GB MMCTR64GUACJ-SAC00 CL10 UHS 104 Please contact your local Samsung sales representative for part numbers and latest product offerings. microSD Card Key Features • Durable and high-performance data storage for your secure digital (SD)
ページ15に含まれる内容の要旨
MAINSTREAM eMMC Seq R/W Random Package Size Density Flash MMC* Class Part Number C/S Perf (MB/s) R/W IOPS (mm) 4GB 32Gb*1 5.0 200 KLM4G1YEMD-C031 100/6 2500/200 11.5x13x0.8 Oct 8GB 64Gb*1 5.0 200 KLM8G1WEMB-B031 100/6 2500/200 11.5x13x0.8 Sep 16GB 64Gb*2 5.0 700 KLMAG2WEMB-B031 170/11 4000/500 11.5x13x0.8 Oct 32GB 64Gb*4 5.0 1500 KLMBG4WEMC-B031 200/50 4000/1500 11.5x13x1.0 Sep 64GB 64Gb*8 5.0 1500 KLMCG8WEMC-B031 200/50 4000/1500 11.5x13x1.0 Oct *MMC5.0 is backwards compatible with 4.5 & 4.41
ページ16に含まれる内容の要旨
SOLID STATE DRIVES (SSD) Power-loss Drive Type Drive Name Interface Form Factor Connector Component Density Part Number Status Protection 128GB MZMTD128HAFV-00000 EOL PM841 SATA III - 6Gb/s mSATA MO-300 Mini PCI-E 3-bit MLC No 256GB MZMTD256HAGM-00000 EOL 512GB MZMTD512HAGL-00000 EOL 128GB MZMPD128HAFV-00000 EOL Client PC/ SM841 SATA III - 6Gb/s mSATA MO-300 Mini PCI-E 2-bit MLC No 256GB MZMPD256HAGM-00000 EOL Embedded 512GB MZMPD512HAGL-00000 EOL 128GB MZHPU128HCGM-00000 MP XP941 PCIe - SATA
ページ17に含まれる内容の要旨
FLASH PRODUCTS ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 K 9 X X X X X X X X - X X X X SAMSUNG Memory Pre-Program Version NAND Flash Customer Bad Block Small Classification Temp Density Package Density --- Organization Generation Organization Mode Vcc 1. Memory (K) 8. Vcc 13. Temp A : 1.65V~3.6V B : 2.7V (2.5V~2.9V) C : Commercial I : Industrial 2. NAND Flash : 9 C : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V) 0 : NONE (Containing Wafer, CHIP, BIZ, Exception E : 2.3V~3.6V R : 1.8V
ページ18に含まれる内容の要旨
Samsung has a vast portfolio of eMCP products for a variety of devices, such as mobile phones and tablets. The following illustration shows Samsung’s lineup of eMCP memory solutions, which can be deployed in almost any application. Samsung eMCP pr oduct suit e with diff er ent d ensities and t y pes o f Mobile DRAM and eMMC eMCP = eMMC + LPDDR1 or LPDDR2 or LPDDR3 ROM 64GB 32GB 16GB 8GB 4GB 2GB 256M 512M 1G 2G 4G 8G
ページ19に含まれる内容の要旨
eMCP: eMMC + LPDDR3 Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package 4GB 4Gb*2 (x32, 1ch, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm 8GB 4Gb*2 (x32, 1ch, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm eMMC & MDRAM 16GB 4Gb*2 (x32, 1ch, 2CS) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5x13mm eMCP: eMMC + LPDDR2 Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package 2Gb (x32) 3.3V/1.8V - 1.8V/1.2V 162FBGA 11.5x13mm 4GB 4Gb (x32) 3.3V/1.8V - 1.8V/1.2V 162FBGA 11.5x1
ページ20に含まれる内容の要旨
SAMSUNG SOLID STATE DRIVES STANDARD DATA PRO DATA DELUXE CENTER SERIES CENTER SERIES ENTERPRISE SERIES Read-Intensive High-Read and High-Write Environments Write Environments Environments Samsung PM843 Samsung SM843T Samsung SM1625 Form Factor 2.5 inches 2.5 inches 2.5 inches Capacity (GB) 120/240/480 120/240/480/960 GB 100/200/400/800 Host Interface Serial ATA 3 (6 Gb/s) Serial ATA 3 (6 Gb/s) SAS (6 Gb/s) MTBF 1.5 Million Hours 2,000,000 hours 2,000,000 hours Uncorrectable Bit 16 17 17
