ページ1に含まれる内容の要旨
FUJITSU SEMICONDUCTOR
DS04-27801-1E
DATA SHEET
ASSP For Power Management Applications (Mobile Phones)
Power Management IC
for GSM Mobile Phone
MB3891
nnnn DESCRIPTION
MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
the necessary functions to support all Digital, Analog and RF blocks in these phones. A Charge-pump including
a Logic Level Translation circuit is built in to support SIM-card (SmartCard) of both 3 and 5 Volt technology. The
ページ2に含まれる内容の要旨
MB3891 nnnn PIN ASSIGNMENT (TOP VIEW) m N.C. : 49 32 : GND-VSIM N.C. : 50 31 : VCAP- SW2-OUTPUT : 51 30 : VCAP+ SW2-INPUT : 52 29 : VSIMOUT SW1-ON : 53 28 : OSC SW2-ON : 54 27 : SIMPROG SW3-ON : 55 26 : VSIM-ON CONT3 : 56 25 : VCC-VSIM CONT5 : 57 24 : REF-OUT OUT5 : 58 23 : VFIL GND5 : 59 22 : VREF VBAT3 : 60 21 : V-BACKUP VBAT3 : 61 20 : VBAT2 VBAT3 : 62 19 : GND1 N.C. : 63 18 : DELAYCAP N.C. : 64 17 : XPOWERGOOD (FPT-64P-M03) 2 N.C. : 1 48 : SW3-INPUT N.C. : 2 47 : SW3-OUTPUT OUT3 : 3 46 :
ページ3に含まれる内容の要旨
MB3891 nnnn PIN DESCRIPTION Pin No. Symbol I/O Descriptions 1, 2 N.C. Non connection. 3, 4 OUT3 O LDO3 output pin. 5GND3 LDO3 ground pin. 6, 7 OUT2 O LDO2 output pin. 8, 9, 10, 11 VBAT1 Battery voltage input pin for LDO1 and LDO2. 12, 13 OUT1 O LDO1 output pin. 14 CONT1 I Power on input from keypad (Active low, Pulled up to VBAT2). 15 CONT6 I “CONT6” input from digital system m P (Active high). 16 CONT2 I External accessory supply voltage Enable (Active high). 17 XPOWERGOOD O Generates the
ページ4に含まれる内容の要旨
MB3891 (Continued) Pin No. Symbol I/O Descriptions 42, 43 VBAT4 Supply voltage for LDO4. 44 CONT4 I OUT4 output voltage selection (“L”=2.8 V,“H”=2.5 V). 45 SW1-OUTPUT O Output of general purpose switch number 1 (Drain). 46 SW1-INPUT I Input of general purpose switch number 1 (Source). 47 SW3-OUTPUT O Output of general purpose switch number 3 (Drain). 48 SW3-INPUT I Input of general purpose switch number 3 (Source). 49, 50 N.C. Non connection. 51 SW2-OUTPUT O Output of general purpose switch
ページ5に含まれる内容の要旨
MB3891 nnnn BLOCK DIAGRAM VBAT2 VBAT1 20 8 9 10 11 LDO1 Over 12 Temp OUT1 OUT CONT1 14 13 Protection ON 17 XPOWERGOOD POR Main UVLO 18 DELAYCAP GND1 19 CONT6 15 LDO2 6 OUT2 OUT 7 ON CONT2 16 SW1-INPUT 46 SW1 SW1-ON 53 45 SW1-OUTPUT SW2-ON 54 52 SW2-INPUT SW2 SW3-ON 55 51 SW2-OUTPUT 48 SW3-INPUT SW3 47 SW3-OUTPUT CONT3 56 60 61 VBAT3 62 CONT5 57 LDO3 3 44 OUT OUT3 CONT4 4 ON 22 VREF 5 GND3 VREF-AMP 42 23 VBAT4 VFIL VREF + 43 LDO4 - 40 OUT OUT4 41 ON REF-OUT 24 CONT4 RESET-IN 33 39 GND4 LDO5 CLK-I
ページ6に含まれる内容の要旨
MB3891 nnnn ABSOLUTE MAXIMUM RATINGS Rating Parameter Symbol Conditions Unit Min. Max. VBAT - 0.3 7 V Power supply voltage VCC-VSIM - 0.3 7 V IO OUT1 pin 120 mA IO OUT2 pin 50 mA LDO regulator IO OUT3 pin 100 mA IO OUT4 pin 100 mA IO OUT5 pin 50 mA VSIMOUT chargepump IO VSIMOUT pin 10 mA Power dissipation PD Ta £ +25 C 800* mW Storage temperature Tstg - 55 +125 C * : The packages are mounted on the dual-sided epoxy board(10 cm · 10 cm) WARNING: Semiconductor devices can be p
ページ7に含まれる内容の要旨
MB3891 nnnn ELECTRICAL CHARACTERISTICS (Ta = +25 C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) Value Parameter Symbol Pin No. Conditions Unit Min. Typ. Max. 8, 9, 10, 11, UVLO = “L”, IBAT1 80 m A 20, 42, 43, BACKUP UVLO = “L” 60, 61, 62 Shutdown supply current 8, 9, 10, 11, UVLO = “L”, IBAT2 160 m A 20, 42, 43, BACKUP UVLO = “H” 60, 61, 62 8, 9, 10, 11, Standby supply All circuit’s = On IBAT3 20, 42, 43, 400 m A current (No load) 60, 61, 62 All circuit’s -VSIM = Operating ground 4,
ページ8に含まれる内容の要旨
MB3891 (Ta = +25 C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) Value Pin Parameter Symbol Conditions Unit No. Min. Typ. Max. Output voltage VO 12, 13 - 50 m A > OUT1 > - 120 mA 2.000 2.100 2.200 V Line regulation Line 12, 13 3.1 V < VBAT1 < 5.5 V 10 mV Load reguration Load 12, 13 - 50 m A > OUT1 > - 120 mA 30 mV Ripple rejection R.R 12, 13 f = 217 Hz 45 dB D VBAT1/D OUT1 LDO1 (OUT1) Dropout voltage VDO 12, 13 OUT1 = - 120 mA 500 mV GND current at low load IGND 19 OUT1 > - 1 mA 30
ページ9に含まれる内容の要旨
MB3891 (Ta = +25 C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) Value Parameter Symbol Pin No. Conditions Unit Min. Typ. Max. Output voltage VO 3, 4 - 50 m A > OUT3 > - 100 mA 2.700 2.800 2.900 V Line regulation Line 3, 4 3.1 V < VBAT3 < 5.5 V 10 mV Load regulation Load 3, 4 - 50 m A > OUT3 > - 100 mA 30 mV Ripple rejection R.R 3, 4 f = 217 Hz 45 dB D VBAT3/D OUT3 LDO3 Dropout voltage VDO 3, 4 OUT3 = - 100 mA 250 mV (OUT3) GND current at low load IGND 5OUT3 > - 1 mA 30 m A GND curr
ページ10に含まれる内容の要旨
MB3891 (Ta = +25 C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) Value Parameter Symbol Pin No. Conditions Unit Min. Typ. Max. - 10 m A > V-BACKUP Output voltage VO 21 2.000 2.100 2.200 V > - 250 m A Line regulation Line 21 3.1 V < VBAT2 < 5.5 V 10 mV - 10 m A > V-BACKUP Load regulation Load 21 30 mV > - 250 m A Ripple rejection D VBAT2/ R.R 21 f = 217 Hz 25 dB D V-BACKUP LDO6 (V-BACKUP) GND current at IGND 19 V-BACKUP > - 10 m A 10 m A low load GND current at IGND 19 V-BACKUP = - 2
ページ11に含まれる内容の要旨
MB3891 (Ta = +25 C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) Value Parameter Symbol Pin No. Conditions Unit Min. Typ. Max. Ripple rejection D VCC-VSIM/ R.R 29 f = 217 Hz 30 dB D VSIMOUT 3.1 V < VCC-VSIM < 5.5 V, IO 29 10 mA VSIMOUT = 5 V Output current 3.1 V < VCC-VSIM < 5.5 V, IO 29 6 mA VSIMOUT = 3 V VSIMOUT GND current at chargepump IGND 32 VSIMOUT > - 50 m A 100 m A no load Efficiency at VSIMOUT = - 10 mA, h 25, 29 85 % max. load VSIMOUT = 5 V Output ripple f = 10 Hz to 1
ページ12に含まれる内容の要旨
MB3891 (Continued) (Ta = +25 C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) Value Parameter Symbol Pin No. Conditions Unit Min. Typ. Max. VSIMOUT VOH 36 RST (max.) = - 20 m A VSIMOUT V - 0.7 Output voltage VOL 36 RST (max.) = 200 mA0 0.6 V Rise time TR 36 RESET-IN = RST = 30 pF 400 m s Fall time TF 36 RESET-IN = RST = 30 pF 400 m s 0.7 · VOH 37 CLK (max.) = - 20 m A VSIMOUT V VSIMOUT Output voltage SIM VOL 37 CLK (max.) = 200 mA0 0.5 V interface Rise time TR 37 CLK-IN = CLK = 30
ページ13に含まれる内容の要旨
MB3891 nnnn TYPICAL CHARACTERISTICS Power supply current vs. power supply voltage Power supply current vs. power supply voltage 350 400 Ta = +25 C Ta = +25 C CONT1 = OPEN CONT1 = “L” 350 m m 300 CONT2 = “H” CONT2 = “H” CONT3 = “H” CONT3 = “H” 300 250 CONT4 = OPEN CONT4 = OPEN CONT5 = OPEN CONT5 = OPEN 250 CONT6 = “H” CONT6 = OPEN 200 VSIM-ON = “H” VSIM-ON = “H” 200 SIMPROG = “H” SIMPROG = “H” OUT1 = No load 150 OUT1 = No load 150 OUT2 = No load OUT2 = No load OUT3 = No load OUT3 = No load 10
ページ14に含まれる内容の要旨
MB3891 Ripple rejection vs. frequency (LDO1) Ripple rejection vs. frequency (LDO1) 0 0 Ta = +25 C VBAT = 3.6 V - 20 - 20 OUT1 = 1 m F CONT1 = “L” CONT6 = OPEN - 40 - 40 Ta = +25 C - 60 - 60 VBAT = 3.6 V OUT1 = 1 m F OUT1 = 18 W - 80 - 80 CONT1 = “L” CONT6 = OPEN - 100 - 100 10 100 1 k 10 k 100 k 1 M 10 100 1 k 10 k 100 k 1 M Frequency f (Hz) Frequency f (Hz) Dropout voltage vs. load current (LDO1) Output voltage vs. ambient temperature (LDO1) 0.6 2.13 VBAT = 2.1 V VBAT = 3.6 V Ta = +85
ページ15に含まれる内容の要旨
MB3891 Output voltage falling waveforms (LDO1) Output voltage falling waveforms (LDO1) 4 Ta = +25 C Ta = +25 C VBAT = 1 m F OUT1 = No load 3 4 OUT1 = No load CONT1 = “L” CONT1 = “L” 2 2 CONT6 = OPEN CONT6 = OPEN VBAT 1 0 VBAT 0 2 2 1 1 OUT1 OUT1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 400 450 500 t (s) t (ms) Output voltage falling waveforms (LDO1) Output voltage rising waveforms (LDO1) 10 CONT1 4 5 2 0 Ta = +25 C CONT1 VBAT = 3.6 V 0 2.0 OUT1 = No lo
ページ16に含まれる内容の要旨
MB3891 Waveform at rapid change of output load (LDO1) [Measurement diagram] OUT1 VBAT = 3.6 V 2.0 1.5 VREF = 1.225 V 1.0 (IC internal) LDO1 OUT1 120 mA VC 0.5 2 Ta = +25 C 0.0 1 VBAT = 3.6 V 1 m F VC CONT1 = “L” 0 4 V CONT6 = OPEN 0 V OUT1 = - 120 mA 0 A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t (ms) [Measurement diagram] Waveform at rapid change of output load (LDO2) 3.0 VBAT = 3.6 V OUT2 2.5 Ta = +25 C VBAT = 3.6 V 2.0 VREF = 1.225 V CONT1 = “L” (IC internal) 1.5 CONT2 = “H” LDO
ページ17に含まれる内容の要旨
MB3891 Reference voltage vs. power supply voltage Reference voltage vs. ambient temperature 1.24 1.4 VBAT = 3.6 V 1.2 1.23 1.0 1.22 0.8 0.6 1.21 0.4 1.20 0.2 Ta = +25 C VFIL = 0.1 m F 1.19 0.0 - 40 - 20 0 20 40 60 80 100 01 2 3 4 5 6 7 Power supply voltage VBAT (V) Ambient temperature Ta ( C) Power supply current vs. power supply voltage Power supply current vs. power supply voltage (VSIMOUT Chargepump) (VSIMOUT Chargepump) 100000 100000 m m VSIMOUT = 510 W VSIMOUT = 510 W 10000 10000 10
ページ18に含まれる内容の要旨
MB3891 Output voltage vs. load current Output voltage vs. load current (VSIMOUT Chargepump) (VSIMOUT Chargepump) 3.00 5.00 Ta = +25 C Ta = +25 C 2.99 4.95 VSIM-ON = “H” VSIM-ON = “H” 2.98 VCC-VISM = 5.5 V SIMPROG = “L” SIMPROG = “H” 4.90 VCC-VISM = 5.5 V 2.97 4.85 2.96 VCC-VISM = 3.1 V 2.95 4.80 VCC-VISM = 3.6 V 2.94 4.75 VCC-VISM VCC-VISM = 3.1 V 2.93 = 3.6 V 4.70 2.92 4.65 2.91 2.90 4.60 0 - 5 - 10 - 15 - 20 0 - 5 - 10 - 15 - 20 Load current ILOAD (mA) Load current ILOAD (mA) Ripple r
ページ19に含まれる内容の要旨
MB3891 Efficiency vs. power supply voltage Efficiency vs. power supply voltage (VSIMOUT Chargepump) (VSIMOUT Chargepump) 100 100 Ta = +25 C Ta = +25 C 90 90 VSIM-ON = “H” VSIM-ON = “H” 80 80 SIMPROG = “H” SIMPROG = “L” 70 70 ILOAD = - 10 mA h h 60 60 50 50 ILOAD = - 10 mA 40 40 ILOAD = - 1 mA 30 30 20 20 ILOAD = - 1 mA 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 3.0 3.5 4.0 4.5 5.0 5.5 Power supply voltage VCC-VSIM (V) Power supply voltage VCC-VSIM (V) Efficiency vs. load current Efficiency vs. lo
ページ20に含まれる内容の要旨
MB3891 Output voltage rising waveforms Output voltage falling waveforms (VSIMOUT Chargepump) (VSIMOUT Chargepump) 10 10 SIMPROG 5 5 SIMPROG VSIMOUT 5 0 5 0 4 4 VSIMOUT 3 3 2 2 Ta = +25 C Ta = +25 C 1 1 VBAT = VCC-VSIM = 3.6 V VBAT = VCC-SIM = 3.6 V VSIMOUT = 510 W 0 VSIMOUT = 510 W 0 VSIM-ON = “H” VSIM-ON = “H” 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t (ms) t (ms) Output voltage falling waveforms Output voltage falling waveforms (VSIMOUT C
