ページ1に含まれる内容の要旨
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3X152D (MA152WA), MA3X152E (MA152WK)
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits
+0.10
0.40
–0.05 +0.10
0.16
–0.06
3
■ Features
• Short reverse recovery time t
rr
• Small terminal capacitance, C
t
1 2
(0.95) (0.95)
1.9±0.1
■ Absolute Maximum Ratings T = 25°C
a
+0.20
2.90
–0.05
Parameter Symbol Rating Unit
10˚
Reverse voltage V 80 V
R
Maximum peak reverse voltage V 80 V
RM
Forward curre
ページ2に含まれる内容の要旨
This product complies with the RoHS Directive (EU 2002/95/EC). MA3X152D, MA3X152E Characteristics chart of MA3X152D I V I V V T F F R R F a 3 10 10 1.2 T = 125°C a 1.0 2 1 10 0.8 −1 75°C 10 10 I = 10 mA F 0.6 T = 125°C a −2 3 mA 10 1 1 mA 75°C 0.4 25°C 0.1 mA −3 −1 − 20°C 10 10 25°C 0.2 −4 −2 10 0 10 0 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1.0 1.2 −40 0 40 80 120 160 Reverse voltage V (V) Forward voltage V (V) Ambient temperature T (°C) R F a I T C V R a t R 10 10 f = 1 MHz T
ページ3に含まれる内容の要旨
This product complies with the RoHS Directive (EU 2002/95/EC). MA3X152D, MA3X152E Characteristics chart of MA3X152E I V I V V T F F R R F a 3 2 10 10 1.2 T = 125°C a 1.0 2 10 10 0.8 75°C 1 10 0.6 I = 10 mA F T = 125°C a −1 1 10 3 mA 75°C 0.4 1 mA 25°C 25°C −1 − 20°C −2 10 10 0.1 mA 0.2 −3 −2 10 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20406080 100 120 −40 0 40 80 120 160 ( ) Reverse voltage V (V) ( ) Forward voltage V V Ambient temperature T °C R F a I T C V R a t R 2 10 10 f = 1 MHz T =
ページ4に含まれる内容の要旨
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application
