ページ1に含まれる内容の要旨
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGM1012
MMIC wideband amplifier
Product specification 2002 Sep 06
Supersedes data of 2002 May 16
ページ2に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 FEATURES PINNING • Internally matched to 50 Ω PIN DESCRIPTION • Very wide frequency range (4 Ghz at 3 dB bandwidth) 1V S 2, 5 GND2 • Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness) 3 RF out • 10 dBm saturated output power at 1 GHz 4 GND1 • High linearity (18 dBm IP3 at 1 GHz) (out) 6RFin • Low current (14.6 mA) • Unconditionally stable. APPLICATIONS 6 54 1 • LNB IF amplifiers • Cable systems 63 • ISM 4 2, 5 132 • Ge
ページ3に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DC supply voltage RF input AC coupled - 4V S I supply current - 50 mA S P total power dissipation T ≤ 90 °C - 200 mW tot s T storage temperature - 65 +150 °C stg T operating junction temperature - 150 °C j P maximum drive power - 10 dBm D THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE
ページ4に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 CHARACTERISTICS V =3V; I = 14.6 mA; T =25 °C; unless otherwise specified. S S j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I supply current 11 14.6 19 mA S 2 ⎪s ⎪ insertion power gain f = 100 MHz 19 19.5 20 dB 21 f = 1 GHz 19 20.1 21 dB f = 1.8 GHz 19 20.4 21 dB f = 2.2 GHz 19 20.4 22 dB f = 2.6 GHz 18 19.9 21 dB f = 3 GHz 16 18.7 20 dB R return losses input f = 1 GHz 9 11 - dB LIN f = 2.2 GHz 13 15 - dB R return loss
ページ5に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 APPLICATION INFORMATION In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance Figure 2 shows a typical application circuit for the and matched input and output offer quick design solutions BGM1012 MMIC. The device is internally matched to in such applications. 50 Ω, and therefore does not need any external matching. The value of the input and output DC block
ページ6に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 90° handbook, full pagewidth 1.0 +1 0.8 135° 45° +2 +0.5 0.6 0.4 +0.2 +5 0.2 100 MHz 4 GHz 0.2 0.5 2 5 180° 0 0° 0 - 0.2 - 5 - 0.5 - 2 - 45° - 135° - 1 MLD910 1.0 - 90° I = 14.6 mA; V = 3 V; P = - 30 dBm; Z =50 Ω. S S D O Fig.7 Input reflection coefficient (s ); typical values. 11 90° handbook, full pagewidth 1.0 +1 0.8 135° 45° +2 +0.5 0.6 0.4 +0.2 +5 100 MHz 0.2 0.2 0.5 1 2 5 180° 0 0° 0 4 GHz - 0.2 - 5 - 0.5 - 2 - 45°
ページ7に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 MLD912 MLD913 0 25 handbook, halfpage handbook, halfpage 2 s 12 2 (dB) s 21 - 10 (dB) 20 (1) - 20 (2) (3) - 30 15 - 40 10 - 50 0 1000 2000 3000 4000 0 1000 2000 3000 4000 f (MHz) f (MHz) P = - 30 dBm; Z =50 Ω. D O (1) I = 18.7 mA; V = 3.3 V. S S (2) I = 14.6 mA; V =3V. S S I = 14.6 mA; V = 3 V; P = - 30 dBm; Z =50 Ω. S S D O (3) I = 10.6 mA; V = 2.7 V. S S 2 2 Fig.9 Isolation (⎪s ⎪ ) as a function of frequency; Fig.10 I
ページ8に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 MLD916 MLD917 5.5 12 handbook, halfpage handbook, halfpage NF (dB) K 5.3 8 5.1 4.9 (1) (3) 4 (2) 4.7 0 4.5 0 1000 2000 3000 0 1000 2000 3000 4000 f (MHz) f (MHz) Z =50 Ω. O (1) I = 10.6 mA; V = 2.7 V. S S (2) I = 14.6 mA; V =3V. S S I = 14.6 mA; V = 3 V; P = - 30 dBm; Z =50 Ω. S S D O (3) I = 18.7 mA; V = 3.3 V. S S Fig.13 Noise figure as a function of frequency; Fig.14 Stability factor as a function of frequency; typical
ページ9に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2002 Sep 06 9 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white t
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Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E X B A y H v M A E 6 54 Q pin 1 index A A 1 132 c e b wB M L 1 p p e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) A 1 UNIT A b cD E e e H LQyvw p 1 E p max 1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25 mm 0.1 1.3 0.65 0.2 0.2 0.1 0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15 REFERENCES EUROPEAN OUTLINE ISSUE DATE PROJECTION VERSION IEC JEDEC EIAJ S
ページ11に含まれる内容の要旨
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS (2) STATUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a la
ページ12に含まれる内容の要旨
Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of
