ページ1に含まれる内容の要旨
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BGA2003
Silicon MMIC amplifier
Product specification 1999 Jul 23
Supersedes data of 1999 Feb 25
ページ2に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 FEATURES PINNING • Low current PIN DESCRIPTION • Very high power gain 1 GND • Low noise figure 2 RF in • Integrated temperature compensated biasing 3 CTRL (bias current control) • Control pin for adjustment bias current 4V + RF out S • Supply and RF output pin combined. APPLICATIONS V +RFout handbook, halfpage CTRL S • RF front end 3 4 • Wideband applications, e.g. analog and digital cellular BIAS telephones, cordless tele
ページ3に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V supply voltage RF input AC coupled - 4.5 V S V voltage on control pin - 2V CTRL I supply current (DC) forced by DC voltage on RF input - 30 mA S or I CTRL I control current - 3mA CTRL P total power dissipation T ≤ 100 °C - 135 mW tot s T storage temperature - 65 +150 °C stg T operating junction temp
ページ4に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS537 200 handbook, halfpage P tot (mW) 100 pF handbook, halfpage R1 V S 150 L1 C RF out R CTRL 100 V 3 4 CTRL BGA2003 50 2 1 C 0 0 50 100 150 200 RF in MGS536 T (°C) s Fig.2 Typical application circuit. Fig.3 Power derating. MGS538 MGS539 2.5 30 handbook, halfpage handbook, halfpage I CTRL (mA) I VS-OUT (mA) 2 20 1.5 1 10 0.5 0 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 I (mA) V (V) CTRL CTRL I =(V - 0.83)/296. V = 2.5 V. CTRL
ページ5に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS540 MGS541 30 20 handbook, halfpage handbook, halfpage (6) I VS-OUT I VS-OUT (mA) (mA) 25 (5) 15 20 (4) 15 10 (3) 10 5 5 (2) (1) 0 0 - 40 0 40 80 120 015 23 4 T (°C) V (V) amb VS-OUT V = 2.5 V. S-OUT (1) I = 0.2 mA. (4) I = 1.5 mA. CTRL CTRL (2) I = 0.4 mA. (5) I = 2.0 mA. CTRL CTRL (3) I = 1.0 mA. (6) I = 2.5 mA. CTRL CTRL I = 1 mA. CTRL Fig.6 Bias current (I ) as a function of the Fig.7 Bias current (I ) as a function
ページ6に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS545 MGS544 40 25 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG 20 30 G max 15 G UM G 20 UM G max 10 10 5 0 0 2 3 4 10 10 10 01 5 015 2025 f (MHz) I (mA) VS-OUT V = 2.5 V; f = 1800 MHz. V = 2.5 V; I = 10 mA. VS-OUT VS-OUT VS-OUT Fig.10 Gain as a function of the bias current Fig.11 Gain as a function of frequency; typical (I ); typical values. values. VS-OUT MGS546 3 handbook, halfpage NF min (dB) 2.5 2 (1
ページ7に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 handbook, full pagewidth 90° unstable region 1.0 source +1 135° 0.8 45° +2 unstable +0.5 region load 0.6 (1) (2) 0.4 +0.2 +5 (3) 0.2 Γopt 0.2 0.5 1 2 5 180° 0° 0 0 (4) - 5 - 0.2 (5) f = 900 MHz; V = 2.5 V; (6) VS-OUT = 10 mA; Z =50 Ω. I VS-OUT o (1) G = 23 dB. - 0.5 - 2 (2) G = 22 dB. - 45° - 135° (3) G =21 dB. - 1 (4) NF = 1.8 dB. 1.0 (5) NF = 2 dB. - 90° MGS547 (6) NF = 2.2 dB. Fig.13 Noise, stability and gain circles;
ページ8に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 90° handbook, full pagewidth 1.0 +1 0.8 135° 45° +0.5 +2 0.6 0.4 +0.2 +5 0.2 0.2 0.5 1 2 5 180° 0 0° 0 1 GHz 100 MHz 2 GHz 3 GHz 200 MHz 500 MHz - 5 - 0.2 - 0.5 - 2 - 45° - 135° - 1 1.0 - 90° MGS549 V = 2.5 V; I = 10 mA; Z =50 Ω. VS-OUT VS-OUT o Fig.15 Common emitter input reflection coefficient (s ); typical values. 11 90° handbook, full pagewidth 135° 45° 500 MHz 900 MHz 200 MHz 1 GHz 1.8 GHz 100 MHz 3 GHz 20 16 12 8 4
ページ9に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 90° handbook, full pagewidth 135° 45° 3 GHz 0.5 0.4 0.3 0.2 0.1 180° 0° 100 MHz - 135° - 45° MGS551 - 90° V = 2.5 V; I = 10 mA; Z =50 Ω. VS-OUT VS-OUT o Fig.17 Common emitter reverse transmission coefficient (s ); typical values. 12 90° handbook, full pagewidth 1.0 +1 0.8 135° 45° +2 +0.5 0.6 0.4 +0.2 +5 0.2 0.2 0.5 1 2 5 180° 0° 0 0 100 MHz 900 MHz 200 MHz 1 GHz - 5 - 0.2 500 MHz 3 GHz 1.8 GHz - 0.5 - 2 - 45° - 135° - 1
ページ10に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads SOT343R D B E A X y H v M A E e 3 4 Q A A 1 c 21 L w M B b b p p 1 e 1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) A 1 A UNIT b b cD E e e H LQwv y p 1 1 E p max 0.4 1.1 0.7 0.25 2.2 1.35 2.2 0.45 0.23 mm 0.1 1.3 1.15 0.2 0.2 0.1 0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13 REFERENCES EUROPEAN OUTLINE ISSUE DATE VERSION PROJECTION
ページ11に含まれる内容の要旨
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). St
ページ12に含まれる内容の要旨
Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Norway: Box 1, Manglerud 0612, OSLO, T
