Panasonic Schottky Barrier Diodes MA2SD250Gの取扱説明書

ページ1に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD250G
Silicon epitaxial planar type
For super high speed switching
■ Package
■ Features
•
• Code
Forward current (Average) I = 200 mA rectification is possible
F(AV)
SSMini2-F4
•
Pin Name
1: Anode
■ Absolute Maximum Ratings T = 25°C
a
2: Cathode
Parameter Symbol Rating Unit
Reverse voltage V 15 V
■ Marking Symbol: 6L
R
Repetitive peak reverse voltage V 15 V
RRM
Forward current (Average) I 200 mA
F(A

ページ2に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC). MA2SD250G I  V I  V C  V F F R R t R 3 5 10 10 40 T = 25°C a T = 125°C a 4 2 10 10 30 T = 125°C a 3 75°C 10 10 25°C 75°C −20°C 2 10 1 20 25°C −1 10 10 10 −2 1 10 −1 −3 10 0 10 0 0.2 0.4 010 20 010 20 ( ) Reverse voltage V (V) Reverse voltage V (V) Forward voltage V V R R F I  T F(AV) a 300 T = 125°C j I F t p 250 T DC 200 150 100 50 0 0 40 80 120 160 Ambient temperature T (°C) a 2 SKH00179AED Forward current (Average) I

ページ3に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC). MA2SD250G SSMini2-F4 Unit: mm +0.05 +0.05 0.80 −0.03 0.13 −0.02 2 0 to 0.05 1 0.30 ±0.05 5° SKH00179AED 3 +0.05 0.60 −0.03 5° (0.15) +0.05 0.20 ±0.05 1.20 −0.03 1.60 ±0.05

ページ4に含まれる内容の要旨

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application