Panasonic MA2J727の取扱説明書

ページ1に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J727
Silicon epitaxial planar type
Unit: mm
1.25±0.1 0.7±0.1
For super high speed switching
0.35±0.1
For small current rectification
1
0 to 0.1
■ Features
• V = 50 V is guaranteed
R
• I = 200 mA rectification is possible
F(AV)
2
+0.1
0.16
0.5±0.1 –0.06
5˚
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
Reverse voltage V 50 V
R
1: Anode
2: Cathode
Repetitive peak reverse voltage V 5

ページ2に含まれる内容の要旨

This product complies with the RoHS Directive (EU 2002/95/EC). MA2J727 I  V I  V V  T F F R R F a 3 5 10 10 0.5 T = 150°C a I = 200 mA F 2 4 10 10 0.4 T = 150°C −20°C a 100 mA 100°C 3 10 10 0.3 100°C 25°C 2 1 10 0.2 30 mA 25°C −1 0.1 10 10 −2 10 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1020304050 60 −40 0 40 80 120 160 200 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V R a t R 5 10 30 f = 1 MHz T = 25°C a 25 4 10 20 3 10 V = 30 V R 15 5 V 2 10 10 10

ページ3に含まれる内容の要旨

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application