ページ1に含まれる内容の要旨
FDD6690A
July 2003
FDD6690A
Ò
30V N-Channel PowerTrench MOSFET
General Description Features
This N-Channel MOSFET is produced using Fairchild
• 46 A, 30 V R = 12 mΩ @ V = 10 V
DS(ON) GS
Semiconductor’s advanced PowerTrench process that
R = 14 mΩ @ V = 4.5 V
DS(ON) GS
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
• Low gate charge
superior switching performance.
• Fast Switching Speed
Applications
• DC/DC converter
• High performance trench
ページ2に含まれる内容の要旨
FDD6690A Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) E Drain-Source Avalanche Energy Single Pulse, V = 15 V, I = 12A 180 mJ AS DD D I Drain-Source Avalanche Current 12 A AS Off Characteristics BV Drain–Source Breakdown Voltage V = 0 V, I = 250 μA 30 V DSS GS D ΔBVDSS Breakdown Voltage Temperature 24 I = 250 μA,Referenced to 25°C mV/°C D Coefficient ΔT J I DSS Zero Gate Voltage Drain Cur
ページ3に含まれる内容の要旨
FDD6690A Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current 2.3 A S V Drain–Source Diode Forward Voltage V = 0 V, I = 2.3 A (Note 2) 0.76 1.2 V SD GS S I = 12 A, d /d = 100 A/µs F iF t t Diode Reverse Recovery Time 24 nS rr Q Diode Reverse Recovery Charge 13 nC rr Notes: 1. R is the sum of the junction-to-case and case-to
ページ4に含まれる内容の要旨
FDD6690A Typical Characteristics 100 1.8 V = 10.0V 4.5V GS V = 3.5V GS 6.0V 5.0V 4.0V 1.6 80 1.4 4.0V 60 4.5V 3.5V 5.0V 1.2 40 6.0V 10.0V 1 20 3.0V 0.8 0 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 I , DRAIN CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 0.03 I = 12A D I = 6A D V = 10V GS 1.4 0.025 1.2 0.02 o T = 125 C A 1 0.015 o T = 25 C A 0.8 0.01 0.6 0.005 -50 -25 0 25 50 75 100 125 150 2 4 6 8
ページ5に含まれる内容の要旨
FDD6690A Typical Characteristics 10 1800 f = 1MHz I = 12 A D V = 0 V V = 10V GS DS 20V 1500 8 C iss 1200 15V 6 900 4 600 C oss 2 300 C rss 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 Q , GATE CHARGE (nC) V , DRAIN TO SOURCE VOLTAGE (V) g DS Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 1000 100 SINGLE PULSE R = 96°C/W θJA R LIMIT 100µs DS(ON) 100 80 T = 25°C A 1ms 10ms 10 100ms 60 1s 10 1 40 DC V = 4.5V GS SINGLE PULSE o R = 96 C/W 0.1 θJA 20 o T = 25 C A 0.01 0 0.1 1 10
ページ6に含まれる内容の要旨
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ LittleFET™ Power247™ SuperSOT™-6 FACT Quiet Series™ ActiveArray™ MICROCOUPLER™ PowerTrench SuperSOT™-8 FAST Bottomless™ MicroFET™ QFET SyncFET™ FASTr™ CoolFET™ MicroPak™ QS™ TinyLogic FRFET™ CROSSVOLT™ MICROWIRE™ QT Optoelectronics™ TINYOPTO™ GlobalOptoisolator™ DOME™ MSX™ Quiet Series™ TruTrans
