Instruction d'utilisation Cypress CY14B256L

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Comparison between CY14B256L
and STK14C88-3 nvSRAM
AN20639
Author: Shivendra Singh
Associated Project: No
Associated Part Family: CY14B256L and STK14C88-3
Associated Application Notes: None
Application Note Abstract
This application note compares the CY14B256L (0.25 μm) and the STK14C88-3 (0.8 μm) devices and presents the results.
Most applications use autostore and autorecall features of
Introduction
nvSRAM. To simplify the comparison, all electrical parame-
CY14B256L and STK14C88-3 are both

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AN20639 Table 1. Comparison Table (continued) Specification CY14B256L (35 nsec) STK14C88-3 (35 nsec) Auto Store/Power Up Recall t [2] 20 ms max 550 µs max HRECALL 3 t [ ] 12.5 ms max 10 ms max STORE V [4] No minimum 2.65V max 2.7V min 2.95V max SWITCH Notes 2. The power up recall specification is the most dramatic difference between the two devices. To accommodate the much slower specification of the CY14B256L device, system timing modifications may be required. 3. Store timing differences

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AN20639 Document History Page Document Title: Comparison between CY14B256L and STK14C88-3 nvSRAM Document Number: 001-20639 Orig. of Submission Revision ECN No. Change Date Description of Change ** 1410463 ZSK 08/23/07 New application note *A 1639723 ZSK 10/16/07 Changed title *B 1758963 ZSK 11/19/07 Minor change *C 2610582 NXR 11/20/08 Changed title. Updated content to reflect change in part number All trademarks or registered trademarks referenced herein are the property of their respective o