Résumé du contenu de la page N° 1
Product Selection Guide
LCD, Memory and Storage - 1H 2011
Résumé du contenu de la page N° 2
Samsung Semiconductor, inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks to powerful servers—and in a wide range of handheld devices such as smartphones and tablets. Samsung also delivers the industry’s widest line of storage products from the consumer to the enterprise level. These include optical and hard disk drives as well as flash storage, such as the
Résumé du contenu de la page N° 3
dr AM Pages 4-12 samsung.com/semi/dram • DDR3 SDRAM • Mobile DRAM • DDR2 SDRAM • Graphics DDR SDRAM • DDR SDRAM • DRAM Ordering • SDRAM Information Samsung Semiconductor, inc Fl ASH Pages 13-15 samsung.com/semi/flash • SLC Flash • Solid State Drive • MLC Flash • SATA SSD • SD and microSD Cards • Flash Ordering • moviNAND™ (eMMC) Information Hi GH-SPeed Sr AM Pages 16-20 samsung.com/semi/sram • Asychronous • DDR Synchronous SRAM • Synchronous • QDR Synchronous SRAM • NtRAM™ • SRAM Ordering • L
Résumé du contenu de la page N° 4
ddr3 Sdr AM reGiS tered ModuleS Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production M393B2873FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now 1GB 1.5V 128Mx72 M393B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1 Now M393B5673FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333/1600 2 Now M393B5673GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8)
Résumé du contenu de la page N° 5
ddr3 Sdr AM VlP re GiS tered ModuleS Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production M392B2873FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now 1GB 1.5V 128Mx72 Lead Free & Halogen Free, M392B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9 1066/1333/1600/1866 1 Now Flip Chip M392B5673FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333/K0 2 Now Lead Free & Halogen Free, M392B5673GB0-C(F8/
Résumé du contenu de la page N° 6
ddr3 Sdr AM unBuFFered ModuleS Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production M378B2873FH0-C(F8/H9/K0) 1Gb (128M x8) * 8 Lead Free & Halogen Free 1066/1333/1600 1 Now 1GB 1.5V 128Mx64 Lead Free & Halogen Free, M378B2873GB0-C(F8/H9/K0/MA) 1Gb (128M x8) * 8 1066/1333/1600/1866 1 Now Flip Chip M378B5673FH0-C(F8/H9/K0) 1Gb (128M x8) * 16 Lead Free & Halogen Free 1066/1333/1600 2 Now Lead Free & Halogen Free, M378B5673GB0-C(F8/H9/K0/MA) 1Gb (128M x8)
Résumé du contenu de la page N° 7
ddr3 Sdr AM coMPonent S Density Voltage Organization Part Number # Pins-Package Compliance Speed (Mbps) Dimensions Production K4B1G0446F-HC(F8/H9/K0) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now 1Gb 1.5V 256M x4 Lead Free & Halogen Free, K4B1G0446G-BC(F8/H9/K0/MA) 78 Ball -FBGA 1066/1333/1600/1866 7.5x11mm Now Flip Chip K4B1G0846F-HC(F8/H9/K0) 78 Ball -FBGA Lead Free & Halogen Free 1066/1333/1600 7.5x11mm Now 1Gb 1.5V 128M x8 Lead Free & Halogen Free, K4B1G0846G-BC(F8/H9/
Résumé du contenu de la page N° 8
ddr2 Sdr AM unBuFFered ModuleS Density Organization Part Number Composition Compliance Speed (Mbps) Rank Production 1GB 128Mx64 M378t2863FBs-C(e6/F7/e7) (128M x8)*8 Lead free 667/800 1 Now 2GB 256Mx64 M378t5663FB3-C(e6/F7/e7) (128M x8)*16 Lead free 667/800 2 Now Notes: e6 = PC2-5300 (DDR2-667 @ CL=5) e7 = PC2-6400 (DDR2-800 @ CL=5) F7 = PC2-6400 (DDR2-800 @ CL=6) Voltage = 1.8V ddr2 Sdr AM unBuFFered ModuleS (ecc) Density Organization Part Number Composition Compliance Speed (Mbps) Rank Product
Résumé du contenu de la page N° 9
MoBile dr AM coMPonent S Type Density Organization Part Number Package Power Production 32Mx16 K4M51163PI-BG(1) 54-FBGA 1.8V Now MsDR 512Mb 16Mx32 K4M51323PI-HG(1) 90-FBGA 1.8V Now 16Mx16 K4X56163PN-FG(1) 60-FBGA 1.8V Now 256Mb 8Mx32 K4X56323PN-8G(1) 90-FBGA 1.8V Now 32Mx16 K4X51163PI-FG(1) 60-FBGA 1.8V Now 512Mb 16Mx32 K4X51323PI-8G(1) 90-FBGA 1.8V Now MDDR 1Gb 32Mx32 K4X1G323PF-8G(1) 90-FBGA 1.8V Now 2Gb 64Mx32 K4X2G323PC-8G(1) 90-FBGA 1.8V Now x32 (2Cs, 2CKe) K4X4G303PC-AG(1) 168-FBGA, 12x12
Résumé du contenu de la page N° 10
coMPonent dr AM orderinG inF orMAtion 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power DRAM Package Type DRAM Type Revision Density Interface (VDD, VDDQ) Bit Organization Number of Internal Banks 08: x8 1. Memory (K) 9. Package Type 15: x16 (2Cs) DDR SDRAM 2. DRAM: 4 16: x16 L: tsoP II (Lead-free & Halogen-free) 26: x4 stack (JeDeC standard) 3. DRAM Type H: FBGA (Lead-free & Halogen-free) 27: x8 stack (JeDeC standard) F: FBGA for 64Mb DDR (Lead-free & Halogen-
Résumé du contenu de la page N° 11
coMPonent dr AM orderinG inF orMAtion 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power DRAM Package Type DRAM Type Revision Density Interface (VDD, VDDQ) Bit Organization Number of Internal Banks XDR DRAM DDR2 SDRAM 1 : 1.1ns (900MHz) J: BoC(LF) P: BoC CC: DDR2-400 (200MHz @ CL=3, tRCD=3, 55: 5.5ns (183MHz) tRP=3) 12: 1.25ns (800MHz) Mobile DRAM D5: DDR2-533 (266MHz @ CL=4, tRCD=4, 60: 6.0ns (166MHz) Leaded / Lead Free tRP=4) 14: 1.4ns (700MHz) G/A: 52balls FB
Résumé du contenu de la page N° 12
Module dr AM orderinG inF orMAtion 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X SAMSUNG Memory AMB Vendor DIMM Speed Data bits Temp & Power DRAM Component Type PCB Revision Depth Package Number of Banks Component Revision Bit Organization 1. Memory Module: M 5. Depth 9. Package 09: 8M (for 128Mb/512Mb) e: FBGA QDP (Lead-free & Halogen-free) 2. DIMM Type 17: 16M (for 128Mb/512Mb) G: FBGA 3: DIMM 16: 16M H: FBGA (Lead-free & Halogen-free) 4: soDIMM 28: 128M J: FBGA DDP (Lead-free)
Résumé du contenu de la page N° 13
Slc Fl ASH MOQ Family Density Part Number Package Type Org. Vol(V) Tray T/R Status -xxxx0xx -xxx0Txx K9QDGD8s5M-HCB* BGA x8 1.8 960 1000 C/s 128Gb oDP K9QDGD8U5M-HCB* BGA x8 3.3 960 1000 C/s K9QDG08U5M-HCB* BGA x8 3.3 960 1000 C/s K9WCGD8s5M-HCB* BGA x8 1.8 960 1000 C/s K9WCGD8U5M-HCB* BGA x8 3.3 960 1000 C/s 64Gb QDP K9WCG08U5M-HCB* BGA x8 3.3 960 1000 C/s K9WCG08U5M-HIB* BGA x8 3.3 960 1000 C/s 16Gb Based K9KBGD8s1M-HCB* BGA x8 1.8 960 1000 C/s K9KBGD8U1M-HCB* BGA x8 3.3 960 1000 C/s 32Gb DDP
Résumé du contenu de la page N° 14
Mlc Fl ASH MOQ Package Type Family Density Technology Part Number Org. Vol(V) Tray T/R Status Type -xxxx0xx -xxx0Txx 256Gb oDP 32nm ep-MLC K9PFGD8U5M-HCe* BGA x8 3.3 720 - C/s Now 32Gb Based 128Gb QDP 32nm ep-MLC K9HDGD8U5M-HCe* BGA x8 3.3 720 - C/s Now 64Gb DDP 32nm ep-MLC K9LCGD8U1M-HCe* BGA x8 3.3 720 - C/s Now 64Gb Based 256Gb oDP 35nm K9ACGD8U0M-sCB* 52LGA x8 3.3 720 2000 MP 128Gb QDP 27nm K9HDG08U1A-sCB* 48tsoP x8 3.3 960 1000 MP 2bit 32Gb Based 64Gb DDP 27nm K9LCG08U0A-sCB* 48tsoP x8 3.3
Résumé du contenu de la page N° 15
Fl ASH Product orderinG inF orMAtion 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 K 9 X X X X X X X X - X X X X SAMSUNG Memory Pre-Program Version NAND Flash Customer Bad Block Small Classification Temp Density Package Density --- Organization Generation Organization Mode Vcc 1. Memory (K) 8. Vcc 13. Temp A : 1.65V~3.6V B : 2.7V (2.5V~2.9V) C : Commercial I : Industrial 2. NAND Flash : 9 C : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V) 0 : NoNe (Containing Wafer, CHIP, BIZ, exception e : 2.3V~3.6V R : 1.8V
Résumé du contenu de la page N° 16
Hi GH-SPeed ASYncHronouS Sr AM Density Organization Part Number Package Vcc (V) Speed (ns) Operating Operating Standby Production Temp. Current (mA) Current (uA) Status K6R4016C1D 44-soJ, 44-tsoP2 5 10 I 65, 55 20, 5 Mass Production 256Kx16 K6R4016V1D 44-soJ, 44-tsoP2 3.3 10 I 80, 65 20, 5 (1.2) Mass Production 4Mb K6R4008C1D 36-soJ, 44-tsoP2 5 10 I 65, 55 20, 5 Mass Production 512Kx8 K6R4008V1D 36-soJ, 44-tsoP2 3.3 10 I 80, 65 20, 5 Mass Production SYncHronouS Sr AM SPB & SB Density Org
Résumé du contenu de la page N° 17
ntr AM Type Density Organization Part Number Package Operating Vdd (V) Access Time Speed I/O Voltage Production Status Mode tCD (ns) tCYC (MHz) (V) 2Mx36 K7N643645M 100-tQFP sPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 72Mb 4Mx18 K7N641845M 100-tQFP sPB 2.5 2.6, 3.5 250, 167 2.5 Mass Production 1Mx36 K7N323631C 100-tQFP, 165FBGA sPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 2Mx18 K7N321831C 100-tQFP, 165FBGA sPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 Mass Production 36Mb 1Mx36 K7M32363
Résumé du contenu de la page N° 18
ddr S YncHronouS Sr AM Type Density Organization Part Number Package Vdd (V) Access Time Cycle Time I/O Voltage Production Comments tCD (ns) (V) Status 512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production 16Mb 1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production DDR 256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs 8Mb 512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs K7I641882M
Résumé du contenu de la page N° 19
Qdr SYncHronouS Sr AM Type Density Organization Part Package Vdd Access Time Cycle Time I/O Voltage Production Comments Number (V) tCD (ns) (V) Status K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B 1Mx18 K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B QDR I 18Mb K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B 512Kx36 K7Q163664B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B 8Mx9 K7R640982M 165
Résumé du contenu de la page N° 20
SYncHronouS Sr AM orderinG inF orMAtion 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 K 7 X X X X X X X X - X X X X X SAMSUNG Memory Packaging Type Sync SRAM Speed Small Classification Speed Density Temp, Power Density Package Organization --- Organization Generation Vcc, Interface, Mode Vcc, Interface, Mode 49: 2.5V,LVttL,Hi sPeeD WAFER, CHIP BIZ Level Division 1. Memory (K) 52: 2.5V,1.5/1.8V,HstL,Burst2 0: NoNe,NoNe 2. Sync SRAM: 7 54: 2.5V,1.5/1.8V,HstL,Burst4 1: Hot DC sort 62: 2.5V/1.8V,HstL,Burst
