Instruction d'utilisation Panasonic Schottky Barrier Diodes MA3J7020G

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3J7020G
Silicon epitaxial planar type
For high frequency rectification
■ Package
■ Features
•
• Code
Forward current (Average) I = 500 mA rectification is possible
F(AV)
• SMini3-F2
Small reverse current I (About 1/10 of I of the ordinary
R R
•
Pin Name
products)
1: Anode
2: N.C.
3: Cathode
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
■ Marking Symbol: M4R
Reverse voltage V 20 V

Résumé du contenu de la page N° 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3J7020G I  V I  V V  T F F R R F a 4 1 10 0.8 T = 125°C a −1 3 10 10 T = 125°C a 75°C 0.6 25°C −20°C −2 2 10 10 I = 500 mA F 75°C 0.4 −3 10 10 50 mA 0.2 −4 10 1 25°C 5 mA −5 −1 10 10 0 0 0.2 0.4 0.6 0 5 10 15 20 25 30 −40 0 40 80 120 160 200 ( ) Forward voltage V V Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V I  t R a t R F(surge) W 3 80 10 4 10 T = 25°C a T = 25°C a I F(surge) t W 3 10 2 V = 20

Résumé du contenu de la page N° 3

This product complies with the RoHS Directive (EU 2002/95/EC). MA3J7020G SMini3-F2 Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 3 12 +0.05 (0.65) (0.65) 0.13 −0.02 1.30 ±0.10 (5°) SKH00193AED 3 (0.89) 0 to 0.10 1.25 ±0.10 0.90 ±0.10 2.10 ±0.10 (5°) 0.425 ±0.050 (0.49)

Résumé du contenu de la page N° 4

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application