Instruction d'utilisation Philips BGD712

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD712
750 MHz, 18.5 dB gain power
doubler amplifier
Product specification 2001 Nov 02
Supersedes data of 2001 Oct 29

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Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 FEATURES PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2, 3 common • Silicon nitride passivation 5+V B • Rugged construction 7, 8 common • Gold metallization ensures excellent reliability. 9 output APPLICATIONS handbook, halfpage • CATV systems operating in the 40 to 750 MHz 2 8 1 35 7 9 frequency range. DESCRIPTION Side view M

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Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 CHARACTERISTICS Bandwidth 40 to 750 MHz; V = 24 V; T =35 °C; Z =Z =75 Ω B mb S L SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G power gain f = 45 MHz 18.2 18.5 18.8 dB p f = 750 MHz 19 19.5 20 dB SL slope straight line f = 45 to 750 MHz; note 1 0.5 1 1.5 dB FL flatness straight line f = 45 to 100 MHz --± 0.35 dB f = 100 to 700 MHz --± 0.5 dB f = 700 to 750 MHz --± 0.15 dB S input return losses f = 4

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Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT CSO composite second 112 channels flat; V = 44 dBmV; --- 63 dB o order distortion f = 746.5 MHz m 79 channels flat; V = 44 dBmV; --- 68 dB o f = 548.5 MHz m 79 channels; f = 746.5 MHz; --- 62 dB m V = 49.3 dBmV at 547 MHz; note 2 o d second order distortion note 3 --- 74 dB 2 V output voltage d = - 60 dB; note 4 64 -- dBmV o im NF noise figure f = 50 MHz --

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Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 MCD842 MCD843 - 50 56 - 50 56 handbook, halfpage handbook, halfpage V X V CTB o o mod (dB) (dBmV) (dB) (dBmV) (1) (1) - 60 52 - 60 52 (2) (3) (4) - 70 48 - 70 48 (2) (3) - 80 (4) 44 - 80 44 40 40 - 90 - 90 0 200 400 600 800 0 200 400 600 800 f (MHz) f (MHz) Z =Z =75 Ω; V = 24 V; 79 channels; Z =Z =75 Ω; V = 24 V; 79 channels; S L B S L B tilt = 7.3 dB (50 to 550 MHz). tilt = 7.3 dB (50 to 550 MHz). (1

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Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A 2 1 23 5 78 9 A L F S W e b w M c e 1 d q y M B U 2 Q 2 B q y M B 1 y M B p U q 1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) U A d A D E L Q Z 2 1 UNITbF c eep q q q S U W w y 1 1 2 2 max. max.

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Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS (2) STATUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will b

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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of