Instruction d'utilisation Panasonic Schottky Barrier Diodes MA3X716 (MA716)

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3X716 (MA716)
Silicon epitaxial planar type
Unit: mm
For switching
+0.10
0.40
–0.05 +0.10
0.16
For wave detection –0.06
3
■ Features
• Two MA3X704A (MA704A) is contained in one package
1 2
(series connection)
(0.95) (0.95)
• Low forward voltage V , optimum for low voltage rectification
F 1.9±0.1
+0.20
2.90
• Optimum for high frequency rectification because of its short
–0.05
reverse recovery time (t )

Résumé du contenu de la page N° 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3X716 I  V I  V V  T F F R R F a 3 3 10 10 1.0 75°C 25°C 2 2 10 10 0.8 T = 125°C a = 125°C T −20°C a I = 30 mA F 10 10 0.6 75°C 1 1 0.4 3 mA 25°C 1 mA −1 −1 10 10 0.2 −2 −2 10 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 −40 0 40 80 120 160 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V R a t R 3 2.4 10 f = 1 MHz T = 25°C a 2 10 V = 30 V R 15 V 1.6 10 1 0.8 −1 10 −2 0 10

Résumé du contenu de la page N° 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application