Instruction d'utilisation Panasonic Schottky Barrier Diodes MA3J745EG

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3J745EG
Silicon epitaxial planar type
For high speed switching
For wave detection
 Package
 Features  Code
 Two elements are contained in one package, allowing highdensity
SMini3-F2
mounting  Pin Name
 Low forward voltage V , optimum for low voltage recti fication
F
1: Anode 1
 Optimum for high frequency recti fication because of its short
2: Anode 2
reverse recovery time t
rr
3: Cat

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This product complies with the RoHS Directive (EU 2002/95/EC). MA3J745EG I  V I  V V  T F F R R F a 3 4 10 10 1.0 T = 125°C a 75°C 25°C 2 3 10 10 0.8 T = 125°C −20°C a 75°C I = 30 mA F 2 10 10 0.6 10 mA 25°C 1 10 0.4 –1 10 1 0.2 1 mA –2 −1 10 10 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 5 10 15 20 25 30 −40 0 40 80 120 160 Forward voltage V (V) Reverse voltage V (V) ( ) Ambient temperature T °C F R a I  T C  V I  T R a t R F(AV) a 4 10 3.2 50 f = 1 MHz T = 125°C j T = 25°C I a F t p V = 30 V

Résumé du contenu de la page N° 3

This product complies with the RoHS Directive (EU 2002/95/EC). MA3J745EG SMini3-F2 Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 3 1 2 +0.05 (0.65) (0.65) 0.13 −0.02 1.30 ±0.10 (5°) SKH00234AED 3 (0.89) 1.25 ±0.10 0 to 0.10 0.90 ±0.10 2.10 ±0.10 (5°) 0.425 ±0.050 (0.49)

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application