Instruction d'utilisation Panasonic Schottky Barrier Diodes MA2Z720

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2Z720
Silicon epitaxial planar type
Unit: mm
1.25±0.1 0.7±0.1
For high frequency rectification
0.35±0.1
1
■ Features
0 to 0.1
• Forward current (Average) I = 500 mA rectification is
F(AV)
possible
• High-density mounting is possible
2
+0.1
0.16
0.5±0.1 –0.06
■ Absolute Maximum Ratings T = 25°C 5˚
a
Parameter Symbol Rating Unit
Reverse voltage V 40 V
R
Maximum peak reverse voltage V 40 V
RM
Forward cur

Résumé du contenu de la page N° 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA2Z720 I  V I  V C  V F F R R t R −1 100 10 10 T = 25°C a T = 125°C a 1 75°C 25°C −2 10 80 T = 125°C a −1 10 −20°C −3 60 10 75°C −2 10 −4 40 10 −3 10 25°C −5 10 20 −4 10 −5 −6 0 10 10 0 0.2 0.4 0.6 0 1020304050 60 02 100 3040 5060 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R SKH00035BED 2 Forward current I (A) F Reverse current I (A) R ( ) Terminal capacitance C pF t

Résumé du contenu de la page N° 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application