Instruction d'utilisation Panasonic Schottky Barrier Diodes MA2SD30

Résumé du contenu de la page N° 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD30
Silicon epitaxial planar type
Unit: mm
+0.05
0.60
–0.03
For super high speed switching
+0.05
+0.05
0.12
0.80 –0.02
–0.03
1
■ Features
• Small reverse current: I < 2 µA (at V = 30 V)
R R
0.01±0.01
• Optimum for high frequency rectification because of its short
reverse recovery time t .
rr
2
0.30±0.05
+0
0
–0.05
■ Absolute Maximum Ratings T = 25°C
a
5˚
Parameter Symbol Rating Unit
Reverse voltage

Résumé du contenu de la page N° 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA2SD30 I  V I  V C  V F F R R t R 3 10 10 100 T = 25°C a 75°C 2 10 1 T = 75°C a 10 −1 10 25°C 1 10 25°C −2 T = −25°C 10 a −1 10 −3 10 −25°C −2 10 −3 −4 10 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 Forward voltage V (V) Reverse voltage V (V) Reverse voltage V (V) F R R 2 SKH00130AED Forward current I (mA) F Reverse current I (µA) R Terminal capacitance C (pF) t

Résumé du contenu de la page N° 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application