Resumen del contenido incluido en la página 1
INTEGRATED CIRCUITS
DATA SHEET
TDA8586
Power amplifier with load detection
and auto BTL/SE selection
Preliminary specification 2001 Jul 23
Supersedes data of 1999 Apr 08
File under Integrated Circuits, IC01
Resumen del contenido incluido en la página 2
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection FEATURES GENERAL DESCRIPTION General The device incorporates the following functions: • 4 × 6 W SE amplifies without SE capacitor, because of • Operating voltage from 8 to 18 V the availability of 2 half supply voltage power buffers • Low distortion • 2 × 20 W BTL amplifiers • Few external components, fixed gain • Automatic switching between 2 and 4 speaker • Automatic mode select
Resumen del contenido incluido en la página 3
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V operating supply voltage 8.0 - 18 V P I total quiescent current V = 14.4 V, SE mode - 140 170 mA q(tot) P I standby supply current V = 14.4 V - 1 100 μA stb P G voltage gain SE mode 25 26 27 dB v BTL mode 31 32 33 dB Bridge-tied load application P output power V = 14.4 V; R =4 Ω o P L THD = 0.5% 14 15 - W THD =
Resumen del contenido incluido en la página 4
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection BLOCK DIAGRAM V handbook, full pagewidth V P1 P2 2 16 5 IN1 - 60 V/I - kΩ 1 + OUT1 OA + + 60 TDA8586Q V/I - kΩ 3 V - Pn HVP1 OA + + 6 4 OUT2 IN2 OA + 60 - V/I kΩ - 7 IN3 - 60 V/I - kΩ 17 + OUT3 OA + 11 ACREF + V Pn 60 V/I - kΩ 15 V - Pn HVP2 OA 30 kΩ + BUFFER + 8 14 IN4 OUT4 + OA 60 - V/I kΩ - 13 12 MSO DIAG INTERFACE DIAGNOSTIC 10 9 MGR023 PGND2 PGND1 Fig.1 Block diagram SOT243-
Resumen del contenido incluido en la página 5
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection handbook, full pagewidth V V P1 P2 18 13 2 IN1 - 60 V/I - kΩ 17 + OUT1 OA + + 60 TDA8586TH V/I - kΩ 1 19 V - Pn n.c. OA HVP1 + + 3 20 IN2 OA OUT2 + 60 - V/I kΩ - 4 IN3 - 60 V/I - kΩ 14 + OUT3 OA + 6 ACREF + V Pn 60 V/I - kΩ 12 V - Pn HVP2 OA 30 kΩ + BUFFER + 5 11 IN4 OA OUT4 + 60 - V/I kΩ - 8 7 DIAG MSO INTERFACE DIAGNOSTIC 10 9 15 16 MGR024 DDDSEL OVERRULE PGND2 PGND1 Fig.2 Bloc
Resumen del contenido incluido en la página 6
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection PINNING PIN SYMBOL DESCRIPTION TDA8586Q TDA8586TH n.c. - 1 not connected IN1 5 2 non-inverting input 1 IN2 6 3 inverting input 2 IN3 7 4 non inverting input 3 IN4 8 5 inverting input 4 ACREF 11 6 common signal input DIAG 12 7 diagnostic output/mode fix MSO 13 8 mode select mute, standby or on OVERRULE - 9 mode selection overrule DDDSEL - 10 2 or 10% dynamic distortion detection OUT
Resumen del contenido incluido en la página 7
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection handbook, halfpage OUT1 1 V 2 P1 3 HVP1 handbook, halfpage OUT2 4 OUT2 20 1 n.c. HVP1 IN1 5 19 2 IN1 V 18 3 IN2 6 IN2 P1 OUT1 17 4 IN3 7 IN3 PGND1 16 5 IN4 IN4 8 TDA8586TH PGND2 15 6 ACREF PGND1 9 TDA8586Q OUT3 14 7 DIAG PGND2 10 V 13 8 MSO ACREF 11 P2 12 HVP2 12 9 OVERRULE DIAG OUT4 13 11 10 DDDSEL MSO MGR026 14 OUT4 15 HVP2 V 16 P2 OUT3 17 MGR025 Fig.3 Pin configuration (SOT243
Resumen del contenido incluido en la página 8
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection FUNCTIONAL DESCRIPTION The presence of the load is measured after the transition between standby and mute. The IC will determine if there The TDA8586 is a multi-purpose power amplifier with four is an acceptable load on both outputs (OUT2 and OUT4). amplifiers and 2 buffer stages, which can be connected in If both outputs are unloaded, the IC will switch to a the following configu
Resumen del contenido incluido en la página 9
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection handbook, full pagewidth mute mute on on on state standby condition load detect no load detect no clipping/shorts clipping short-circuit V P V P 0 minimum 1 s 9 V SE detection MSO 3 V BTL detection 0 BTL detected 5 V diagnostic information SE detected 0 10 V The mode is overruled only from diagnostic BTL to SE when the diagnostic pin overrule is excited with a pulse of 10 V. 0 5
Resumen del contenido incluido en la página 10
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V supply voltage operating 8 18 V P load dump protected; - 45 V see Fig.6 V voltage on diagnostic pin - 18 V DIAG I non-repetitive peak output current - 6A OSM I repetitive peak output current - 4A ORM V reverse polarity voltage note 1 - 6V rp V AC and DC s
Resumen del contenido incluido en la página 11
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection CHARACTERISTICS V = 14.4 V; T =25 °C; f = 1 kHz; R = ∞; measured in test circuit of Fig.8; unless otherwise specified. P amb i L SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies V operating supply voltage 8.0 14.4 18 V P I total quiescent current SE mode - 140 170 mA q(tot) I standby current - 1 100 μA stb V DC output voltage V = 14.4 V - 7.0 - V O P V low supply voltage mu
Resumen del contenido incluido en la página 12
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G voltage gain V =15mV 313233dB v i(rms) ΔG channel unbalance V =15mV - 0.7 0 +0.7 dB v i(rms) α channel separation P = 2 W; f = 1 kHz; R =4 Ω 45 55 - dB cs o i L V DC output offset voltage V = 14.4 V; on condition - 0 100 mV OO P V = 14.4 V; R =4 Ω; - 10 20 mV P L mute condition V noise output voltage on R =1kΩ; V = 14.4 V; note 3 -
Resumen del contenido incluido en la página 13
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection APPLICATION INFORMATION V handbook, full pagewidth P 1000 μF 100 nF (16/40 V) V V P1 P2 2 16 220 nF IN1 5 - 60 V front V/I - INL kΩ OUT1 1 + OA + + 4 or 8 Ω + - 60 TDA8586Q V/I - kΩ HVP1 3 V - Pn OA + + 220 nF IN2 6 4 OUT2 OA + 60 - V/I kΩ - 220 nF IN3 7 - 60 V front V/I - INR kΩ OUT3 17 + OA + ACREF 11 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 15 V - Pn OA 30 kΩ + BUFFER
Resumen del contenido incluido en la página 14
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection V handbook, full pagewidth P 1000 μF 100 nF (16/40 V) V V P1 P2 2 16 220 nF IN1 5 - 60 V front V/I - INL kΩ OUT1 1 + OA + + 4 or 8 Ω + - 60 TDA8586Q V/I - kΩ HVP1 3 V - Pn OA + + 4 or 8 Ω - + 220 nF OUT2 IN2 6 4 OA + 60 - V/I V rear INL kΩ - 220 nF IN3 7 - 60 V front V/I - INR kΩ OUT3 17 + OA + ACREF 11 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 15 V - Pn OA 30 kΩ + + 4 or
Resumen del contenido incluido en la página 15
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection V handbook, full pagewidth P 1000 μF 100 (16/40 V) nF V V P1 P2 18 13 220 nF IN1 2 - 60 V/I V front - INL kΩ OUT1 17 + OA + + 4 or 8 Ω + - 60 TDA8586TH V/I - kΩ HVP1 19 n.c. 1 V - Pn OA + + 220 nF IN2 3 20 OUT2 + OA 60 - V/I kΩ - 220 nF IN3 4 - 60 V front V/I - INR kΩ OUT3 14 + OA + ACREF 6 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 12 V - Pn OA 30 kΩ + BUFFER + 220 nF IN4
Resumen del contenido incluido en la página 16
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection V handbook, full pagewidth P 1000 μF 100 nF (16/40 V) V V P1 P2 18 13 220 nF IN1 2 - 60 V front V/I - INL kΩ OUT1 17 + OA + + 4 or 8 Ω + - 60 TDA8586TH V/I - kΩ HVP1 n.c. 1 19 V - Pn OA + + 4 or 8 Ω - + 220 nF OUT2 IN2 3 20 OA + 60 - V/I V rear INL kΩ - 220 nF IN3 4 - 60 V front V/I - INR kΩ OUT3 14 + OA + ACREF 6 + 47 μF 4 or 8 Ω (10 V) - + V Pn 60 V/I - kΩ HVP2 12 V - Pn OA 30 k
Resumen del contenido incluido en la página 17
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection INTERNAL PIN CONFIGURATION PIN NAME EQUIVALENT CIRCUIT TDA8586TH 2, 3, 4, 5 and 6 inputs V handbook, halfpage P IN MGE014 11, 12, 14, 17, outputs handbook, halfpage V P 19 and 20 OUT 0.5 V MGE015 P 8 mode select V handbook, halfpage P MGE016 2001 Jul 23 17
Resumen del contenido incluido en la página 18
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection PACKAGE OUTLINES DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave D h x D E h view B: mounting base side d A 2 B j E A L 3 L Q c v M 117 e m e w M Z 1 2 b p e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) (1) (1) UNIT A A b cDdeD E e e E j LL m Q v w x Z 2 p h 1 2 h 3 17.0 4.6 0.75 0.48 24.0 20.0 12.2 3.4 12.4 2.4 2.1
Resumen del contenido incluido en la página 19
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-2 E A D x X c E y 2 H v M A E D 1 D 2 1 10 pin 1 index Q A A 2 (A ) E 3 1 A 4 θ L p detail X 20 11 w M Z b e p 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) A (1) (2) (2) A A A b c D D D E E E e H L Q v w x yZ θ UNIT 2 3 4 p 1 2 1 2 E p max. +0.12 0.53 0.32 16.0 13.0 1.1 11.1 6.2 2
Resumen del contenido incluido en la página 20
Philips Semiconductors Preliminary specification Power amplifier with load detection and TDA8586 auto BTL/SE selection SOLDERING Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the Introduction packages should preferable be kept below 220 °C for This text gives a very brief insight to a complex technology. thick/large packages, and below 235 °C for small/thin A more in-depth account of soldering ICs can be found in packages. our “Data Handbook IC26; Integr
