Resumen del contenido incluido en la página 1
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D252
BGD814
860 MHz, 20 dB gain power
doubler amplifier
Product specification 2001 Nov 01
Supersedes data of 2001 Sep 07
Resumen del contenido incluido en la página 2
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 FEATURES PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2, 3 common • Silicon nitride passivation 5+V B • Rugged construction 7, 8 common • Gold metallization ensures excellent reliability. 9 output APPLICATIONS handbook, halfpage • CATV systems operating in the 40 to 870 MHz 2 8 1 35 7 9 frequency range. DESCRIPTION Side view MSA
Resumen del contenido incluido en la página 3
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 CHARACTERISTICS Bandwidth 40 to 870 MHz; V = 24 V; T =35 °C; Z =Z =75 Ω. B mb S L SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G power gain f = 45 MHz 19.7 - 20.3 dB p f = 870 MHz 20.5 - 21.5 dB SL slope straight line f = 45 to 870 MHz; note 1 0.5 - 1.5 dB FL flatness straight line f = 45 to 100 MHz --± 0.25 dB f = 100 to 800 MHz --± 0.5 dB f = 800 to 870 MHz - 0.4 - 0.1 dB s input return losses f = 4
Resumen del contenido incluido en la página 4
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT CSO composite second 79 chs flat; V = 44 dBmV; f = 548.5 MHz --- 68 dB o m order distortion 112 chs flat; V = 44 dBmV; f = 746.5 MHz--- 61 dB o m 132 chs flat; V = 44 dBmV; f = 860.5 MHz--- 57 dB o m 112 chs; f = 210 MHz; V = 50.2 dBmV at --- 56 dB m o 745 MHz; note 2 79 chs; f = 210 MHz; V = 47.3 dBmV at --- 64 dB m o 547 MHz; note 3 d second order distortio
Resumen del contenido incluido en la página 5
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 MLD345 MLD346 - 50 52 - 40 52 handbook, halfpage handbook, halfpage (1) (1) X V V CTB mod o o (dB) (dB) (dBmV) (dBmV) - 60 48 - 50 48 - 70 44 - 60 44 (2) (3) (2) (4) - 80 (3) 40 - 70 40 (4) 36 36 - 90 - 80 0 200 400 600 800 1000 0 200 400 600 800 1000 f (MHz) f (MHz) Z =Z =75 Ω; V = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). Z =Z =75 Ω; V = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). S L B S L B (1)
Resumen del contenido incluido en la página 6
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 MLD348 MLD349 - 40 52 - 40 52 handbook, halfpage handbook, halfpage (1) (1) X V V mod CTB o o (dB) (dB) (dBmV) (dBmV) - 50 48 - 50 48 (2) (3) (2) - 60 44 - 60 44 (3) (4) (4) - 70 40 - 70 40 36 36 - 80 - 80 0 200 400 600 800 1000 0 200 400 600 800 1000 f (MHz) f (MHz) Z =Z =75 Ω; V = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). Z =Z =75 Ω; V = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). S L B S L B
Resumen del contenido incluido en la página 7
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A 2 1 23 5 78 9 A L F S W e b w M c e 1 d q y M B U 2 Q 2 B q y M B 1 y M B p U q 1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) U A d A D E L Q Z 2 1 UNITbF c eep q q q S U W w y 1 1 2 2 max. max. ma
Resumen del contenido incluido en la página 8
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS DEFINITIONS (2) STATUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will b
Resumen del contenido incluido en la página 9
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 NOTES 2001 Nov 01 9
Resumen del contenido incluido en la página 10
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 NOTES 2001 Nov 01 10
Resumen del contenido incluido en la página 11
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 NOTES 2001 Nov 01 11
Resumen del contenido incluido en la página 12
Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of
