Manual de instrucciones de Panasonic Transistors 2SC2480

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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing Unit: mm
+0.10
0.40
–0.05 +0.10
0.16
–0.06
3
■ Features
• High transition frequency f
T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1 2
packing
(0.95) (0.95)
1.9±0.1
+0.20
2.90
–0.05
■ Absolute Maximum Ratings T = 25°C
a
10˚
Parameter Symbol Rating U

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SC2480 P  T I  V I  I C a C CE C B 24 240 24 T = 25°C a V = 10 V CE I = 300 µA T = 25°C B a 20 200 20 250 µA 16 160 16 200 µA 12 120 12 150 µA 8 80 8 100 µA 4 40 4 50 µA 0 0 0 048 12 16 0 40 80 120 160 0 100 200 300 400 500 Collector-emitter voltage V (V) Ambient temperature T (°C) Base current I (µA) CE a B I  V I  V h  I B BE C BE FE C 400 60 240 V = 10 V V = 10 V V = 10 V CE 25°C CE CE T = 25°C a 350 50 200 T = 75°C −

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This product complies with the RoHS Directive (EU 2002/95/EC). 2SC2480 Z  I G  I NF  I rb E P E E 12 120 40 V = 10 V CB V = 10 V V = 10 V CB CB f = 2 MHz f = 100 MHz f = 100 MHz 35 T = 25°C a R = 50 kΩ R = 50 Ω g g 10 Ω 100 T = 25°C T = 25°C a a 30 80 8 25 60 20 6 15 40 4 10 20 2 5 0 0 0 − 0.1 −1 −10 − 0.1 −1 −10 −100 − 0.1 −1 −10 −100 Emitter current I (mA) Emitter current I (mA) Emitter current I (mA) E E E b  g b  g b  g ib ib rb rb fb fb 0 0 48 200 y = g + jb y = g + jb y = g + j

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application