Inhaltszusammenfassung zur Seite Nr. 1
CY7C1411BV18, CY7C1426BV18
CY7C1413BV18, CY7C1415BV18
36-Mbit QDR™-II SRAM 4-Word
Burst Architecture
Features Configurations
■ Separate independent read and write data ports CY7C1411BV18 – 4M x 8
❐ Supports concurrent transactions CY7C1426BV18 – 4M x 9
CY7C1413BV18 – 2M x 18
■ 300 MHz clock for high bandwidth
CY7C1415BV18 – 1M x 36
■ 4-word burst for reducing address bus frequency
Functional Description
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 M
Inhaltszusammenfassung zur Seite Nr. 2
1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array 1M x 8 Array 1M x 9 Array CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Logic Block Diagram (CY7C1411BV18) 8 D [7:0] Write Write Write Write 20 Address A Reg Reg Reg Reg (20:0) Register 20 Address A (19:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 32 V 16 REF 8 CQ Reg. Reg. Control WPS 8 Logic 8 8 16 NWS Q Reg. [1:0] [7:0] 8 Logic Block Diagram (CY7C1426BV18) 9 D [8:0] Write Write Write
Inhaltszusammenfassung zur Seite Nr. 3
512K x 18 Array 256K x 36 Array 512K x 18 Array 256K x 36 Array 512K x 18 Array 256K x 36 Array 512K x 18 Array 256K x 36 Array CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Logic Block Diagram (CY7C1413BV18) 18 D [17:0] Write Write Write Write 19 Address A Reg Reg Reg Reg (18:0) Register 19 Address A (18:0) Register RPS K Control CLK K Logic Gen. C DOFF Read Data Reg. C CQ 72 V 36 REF CQ 18 Reg. Reg. Control 18 WPS Logic 18 18 36 BWS Q Reg. [17:0] [1:0] 18 Logic Block Diagram (CY7C1415B
Inhaltszusammenfassung zur Seite Nr. 4
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Pin Configuration [1] The pin configuration for CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 follow. 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1411BV18 (4M x 8) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/72M A WPS NWS K NC/144M RPS AA CQ 1 B NC NC NC A NC/288M K NWS ANC NC Q3 0 C NC NC NC V ANC A V NC NC D3 SS SS D NC D4 NC V V V V V NC NC NC SS SS SS SS SS E NC NC Q4 V V V V V NC D2 Q2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC D
Inhaltszusammenfassung zur Seite Nr. 5
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Pin Configuration (continued) [1] The pin configuration for CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 follow. 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1413BV18 (2M x 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/144M A WPS BWS K NC/288M RPS A NC/72M CQ 1 B NC Q9 D9 A NC K BWS ANC NC Q8 0 C NC NC D10 V ANC A V NC Q7 D8 SS SS D NC D11 Q10 V V V V V NC NC D7 SS SS SS SS SS E NC NC Q11 V V V V V NC D6 Q6 DDQ SS SS SS DDQ F NC Q12 D12
Inhaltszusammenfassung zur Seite Nr. 6
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Pin Definitions Pin Name IO Pin Description D Input- Data Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active. [x:0] Synchronous CY7C1411BV18 − D [7:0] CY7C1426BV18 − D [8:0] CY7C1413BV18 − D [17:0] CY7C1415BV18 − D [35:0] WPS Input- Write Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects
Inhaltszusammenfassung zur Seite Nr. 7
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Pin Definitions (continued) Pin Name IO Pin Description CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the AC timing table. CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input c
Inhaltszusammenfassung zur Seite Nr. 8
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 rising edge of the output clocks (C and C, or K and K when in Functional Overview single clock mode). The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18 and When the read port is deselected, the CY7C1413BV18 first CY7C1415BV18 are synchronous pipelined burst SRAMs with a completes the pending read transactions. Synchronous internal read port and a write port. The read port is dedicated to read circuitry automatically tri-states the outputs followi
Inhaltszusammenfassung zur Seite Nr. 9
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 includes forwarding data from a write cycle that was initiated on of ±15% is between 175Ω and 350Ω, with V =1.5V. The DDQ the previous K clock rise. output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature. Read accesses and write access must be scheduled such that one transaction is initiated on any clock cycle. If both ports are Echo Clocks selected on the same K clock rise, the ar
Inhaltszusammenfassung zur Seite Nr. 10
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Truth Table [2, 3, 4, 5, 6, 7] The truth table for CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 follows. Operation K RPS WPS DQ DQ DQ DQ [8] [9] Write Cycle: L-H H L D(A) at K(t + 1)↑ D(A + 1) at K(t + 1)↑ D(A + 2) at K(t + 2)↑ D(A + 3) at K(t + 2)↑ Load address on the rising edge of K; input write data on two consecutive K and K rising edges. [9] Read Cycle: XQ(A) at C(t + 1)↑ Q(A + 1) at C(t + 2)↑ Q(A + 2) at C(t + 2)↑ Q(A
Inhaltszusammenfassung zur Seite Nr. 11
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Write Cycle Descriptions [2, 10] The write cycle description table for CY7C1426BV18 follows. BWS K K Comments 0 L L–H – During the Data portion of a write sequence, the single byte (D ) is written into the device. [8:0] ) is written into the device. L – L–H During the Data portion of a write sequence, the single byte (D [8:0] H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into
Inhaltszusammenfassung zur Seite Nr. 12
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Instruction Register IEEE 1149.1 Serial Boundary Scan (JTAG) Three-bit instructions can be serially loaded into the instruction These SRAMs incorporate a serial boundary scan Test Access register. This register is loaded when it is placed between the TDI Port (TAP) in the FBGA package. This part is fully compliant with and TDO pins, as shown in TAP Controller Block Diagram on IEEE Standard #1149.1-2001. The TAP operates using JEDEC page 15. U
Inhaltszusammenfassung zur Seite Nr. 13
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 IDCODE PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection The IDCODE instruction loads a vendor-specific, 32-bit code into of another boundary scan test operation. the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the The shifting of data for the SAMPLE and PRELOAD phases can device when the TA
Inhaltszusammenfassung zur Seite Nr. 14
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 TAP Controller State Diagram [11] The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 1 1 TEST-LOGIC/ SELECT SELECT 0 IDLE DR-SCAN IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 0 0 SHIFT-DR SHIFT-IR 1 1 1 1 EXIT1-DR EXIT1-IR 0 0 0 0 PAUSE-DR PAUSE-IR 1 1 0 0 EXIT2-DR EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 0 Note 11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-07037 R
Inhaltszusammenfassung zur Seite Nr. 15
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 TAP Controller Block Diagram 0 Bypass Register 2 1 0 Selection Selection TDI TDO Instruction Register Circuitry Circuitry 31 30 29 . . 2 1 0 Identification Register . 108 . . . 2 1 0 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics [12, 13, 14] Over the Operating Range Parameter Description Test Conditions Min Max Unit V Output HIGH Voltage I = −2.0 mA 1.4 V OH1 OH Output HIGH Voltage I = −100 μA1.6 V V OH2 OH
Inhaltszusammenfassung zur Seite Nr. 16
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 TAP AC Switching Characteristics [15, 16] Over the Operating Range Parameter Description Min Max Unit t TCK Clock Cycle Time 50 ns TCYC t TCK Clock Frequency 20 MHz TF t TCK Clock HIGH 20 ns TH t TCK Clock LOW 20 ns TL Setup Times t TMS Setup to TCK Clock Rise 5 ns TMSS t TDI Setup to TCK Clock Rise 5 ns TDIS t Capture Setup to TCK Rise 5 ns CS Hold Times t TMS Hold after TCK Clock Rise 5 ns TMSH t TDI Hold after Clock Rise 5 ns TDIH t Capt
Inhaltszusammenfassung zur Seite Nr. 17
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Identification Register Definitions Value Instruction Field Description CY7C1411BV18 CY7C1426BV18 CY7C1413BV18 CY7C1415BV18 Revision Number 000 000 000 000 Version number. (31:29) Cypress Device ID 11010011011000111 11010011011001111 11010011011010111 11010011011100111 Defines the type of (28:12) SRAM. Cypress JEDEC ID 00000110100 00000110100 00000110100 00000110100 Allows unique (11:1) identification of SRAM vendor. ID Register 1111 Indi
Inhaltszusammenfassung zur Seite Nr. 18
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P29 9G 57 5B85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N32 9F 60 5C88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43
Inhaltszusammenfassung zur Seite Nr. 19
~ ~ CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 DLL Constraints Power Up Sequence in QDR-II SRAM ■ DLL uses K clock as its synchronizing input. The input must QDR-II SRAMs must be powered up and initialized in a have low phase jitter, which is specified as t . KC Var predefined manner to prevent undefined operations. ■ The DLL functions at frequencies down to 120 MHz. Power Up Sequence ■ If the input clock is unstable and the DLL is enabled, then the ■ Apply power and drive DOFF eith
Inhaltszusammenfassung zur Seite Nr. 20
CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Current into Outputs (LOW) ........................................ 20 mA Maximum Ratings Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Exceeding maximum ratings may impair the useful life of the Latch-up Current ................................................... > 200 mA device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Operating Range Ambient Temperature with Pow
