Inhaltszusammenfassung zur Seite Nr. 1
®
CY62147EV30 MoBL
4-Mbit (256K x 16) Static RAM
®
ideal for providing More Battery Life™ (MoBL ) in portable appli-
Features
cations such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
■ Very high speed: 45 ns
consumption when addresses are not toggling. Placing the
■ Temperature ranges
device into standby mode reduces power consumption by more
❐ Industrial: –40°C to +85°C
than 99% when deselected (CE HIGH or both BLE and BHE are
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® CY62147EV30 MoBL Product Portfolio Power Dissipation Speed Product Range V Range (V) Operating I (mA) CC CC (ns) Standby I ( μA) SB2 f = 1 MHz f = f max [2] [2] [2] [2] Min Typ Max Typ Max Typ Max Typ Max CY62147EV30LL Ind’l/Auto-A 2.2 3.0 3.6 45 ns 2 2.5 15 20 1 7 Auto-E 2.2 3.0 3.6 55 ns 2 3 15 25 1 20 Pin Configuration [3, 4] [3, 4] Figure 1. 48-Ball VFBGA (Single Chip Enable) Figure 2. 48-Ball VFBGA (Dual Chip Enable) 126 3 4 5 126 3 4 5 A A A CE A BLE OE 0 1 2 2 A A A NC A BLE OE 0
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® CY62147EV30 MoBL [5, 6] DC Input Voltage ............ –0.3V to 3.9V (V + 0.3V) Maximum Ratings CCmax Output Current into Outputs (LOW) ............................20 mA Exceeding the maximum ratings may impair the useful life of the Static Discharge Voltage .......................................... >2001V device. User guidelines are not tested. (MIL-STD-883, Method 3015) Storage Temperature ................................ –65°C to + 150°C Latch Up Current ................................
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® CY62147EV30 MoBL [9] Thermal Resistance VFBGA TSOP II Parameter Description Test Conditions Unit Package Package Θ Thermal Resistance Still Air, soldered on a 3 × 4.5 inch, two-layer 75 77 °C/W JA (Junction to Ambient) printed circuit board Θ Thermal Resistance 10 13 °C/W JC (Junction to Case) Figure 4. AC Test Load and Waveforms R1 ALL INPUT PULSES V CC V CC 90% OUTPUT 90% 10% 10% GND R2 30 pF Rise Time = 1 V/ns Fall Time = 1 V/ns INCLUDING JIG AND SCOPE Equivalent to: THEVENIN EQUIVALE
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® CY62147EV30 MoBL Switching Characteristics [12, 13] Over the Operating Range 45 ns (Ind’l/Auto-A) 55 ns (Auto-E) Parameter Description Unit Min Max Min Max Read Cycle t Read Cycle Time 45 55 ns RC t Address to Data Valid 45 55 ns AA t Data Hold from Address Change 10 10 ns OHA t CE LOW to Data Valid 45 55 ns ACE t OE LOW to Data Valid 22 25 ns DOE [14] t OE LOW to LOW Z 55 ns LZOE [14, 15] t OE HIGH to High Z 18 20 ns HZOE [14] t CE LOW to Low Z 10 10 ns LZCE [14, 15] t CE HIGH to High Z 1
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® CY62147EV30 MoBL Switching Waveforms [17, 18] Figure 6. Read Cycle No. 1 (Address Transition Controlled) t RC ADDRESS t AA t OHA DATA OUT PREVIOUS DATA VALID DATA VALID [1, 18, 19] Figure 7. Read Cycle No. 2 (OE Controlled) ADDRESS t RC CE t PD t t HZCE ACE OE t HZOE t DOE t LZOE BHE/BLE t HZBE t DBE t LZBE HIGH IMPEDANCE HIGHI MPEDANCE DATA OUT DATA VALID t LZCE t PU I CC V 50% 50% CC I SUPPLY SB CURRENT Notes 17. The device is continuously selected. OE, CE = V , BHE, BLE, or both = V .
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® CY62147EV30 MoBL Switching Waveforms (continued) [1, 16, 20, 21] Figure 8. Write Cycle No. 1 (WE Controlled) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE t BW BHE/BLE OE t HD t SD NOTE 22 DATA DATA IO IN t HZOE [1, 16, 20, 21] Figure 9. Write Cycle No. 2 (CE Controlled) t WC ADDRESS t SCE CE t SA t t AW HA t PWE WE t BW BHE/BLE OE t t SD HD DATA DATA IO NOTE 22 IN t HZOE Document #: 38-05440 Rev. *G Page 7 of 13 [+] Feedback
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® CY62147EV30 MoBL Switching Waveforms (continued) [1, 21] Figure 10. Write Cycle No. 3 (WE Controlled, OE LOW) t WC ADDRESS t SCE CE t BW BHE/BLE t t AW HA t t SA PWE WE t HD t SD DATA IO NOTE 22 DATA IN t LZWE t HZWE [1, 21] Figure 11. Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) t WC ADDRESS CE t SCE t t AW HA t BW BHE/BLE t SA t PWE WE t HZWE t HD t SD NOTE 22 DATA DATA IO IN t LZWE Notes 20. Data I/O is high impedance if OE = V . IH 21. If CE goes HIGH simultaneously with WE = V ,
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® CY62147EV30 MoBL Truth Table [1] IOs Mode Power CE WE OE BHE BLE H X X X X High Z Deselect/Power Down Standby (I ) SB L X X H H High Z Deselect/Power Down Standby (I ) SB L H L L L Data Out (IO –IO ) Read Active (I ) 0 15 CC L H L H L Data Out (IO –IO ); Read Active (I ) 0 7 CC IO –IO in High Z 8 15 L H L L H Data Out (IO –IO ); Read Active (I ) 8 15 CC IO –IO in High Z 0 7 L H H L L High Z Output Disabled Active (I ) CC L H H H L High Z Output Disabled Active (I ) CC L H H L H High Z Out
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® CY62147EV30 MoBL Package Diagrams Figure 12. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150 BOTTOM VIEW TOP VIEW A1 CORNER Ø0.05 M C Ø0.25 M C A B A1 CORNER Ø0.30±0.05(48X) 1 2346 5 65 4 3 2 1 A A B B C C D D E E F F G G H H 1.875 A A B 0.75 6.00±0.10 3.75 B 6.00±0.10 0.15(4X) SEATING PLANE C 51-85150-*D Document #: 38-05440 Rev. *G Page 10 of 13 [+] Feedback 0.25 C 8.00±0.10 0.55 MAX. 0.26 MAX. 0.21±0.05 1.00 MAX 0.10 C 8.00±0.10 5.25 0.75 2.625
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® CY62147EV30 MoBL Package Diagrams (continued) Figure 13. 44-Pin TSOP II, 51-85087 51-85087-*A Document #: 38-05440 Rev. *G Page 11 of 13 [+] Feedback
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® CY62147EV30 MoBL Document History Page ® Document Title: CY62147EV30 MoBL 4-Mbit (256K x 16) Static RAM Document Number: 38-05440 Orig. of Submission Rev. ECN No. Description of Change Change Date ** 201861 AJU 01/13/04 New Data Sheet *A 247009 SYT See ECN Changed from Advanced Information to Preliminary Moved Product Portfolio to Page 2 Changed Vcc stabilization time in footnote #8 from 100 μs to 200 μs Removed Footnote #15(t ) from Previous Revision LZBE Changed I from 2.0 μA to 2.5 μA C
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® CY62147EV30 MoBL Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products PSoC Solutions PSoC psoc.cypress.com General psoc.cypress.com/solutions Clocks & Buffers clocks.cypress.com Low Power/Low Voltage psoc.cypress.com/low-power Wireless wireless.cypress.com Precision Analog psoc.c
