Inhaltszusammenfassung zur Seite Nr. 1
99
CY7C199
32K x 8 Static RAM
provided by an active LOW Chip Enable (CE) and active LOW
Features
Output Enable (OE) and three-state drivers. This device has
• High speed an automatic power-down feature, reducing the power con-
sumption by 81% when deselected. The CY7C199 is in the
—10 ns
standard 300-mil-wide DIP, SOJ, and LCC packages.
Fast t
DOE
An active LOW Write Enable signal (WE) controls the writ-
CMOS for optimum speed/power
ing/reading operation of the memory. When CE and WE inputs
Inhaltszusammenfassung zur Seite Nr. 2
CY7C199 DC Voltage Applied to Outputs Maximum Ratings [1] in High Z State ................................... –0.5V to V + 0.5V (Above which the useful life may be impaired. For user guide- CC [1] lines, not tested.) DC Input Voltage ................................ –0.5V to V + 0.5V CC Storage Temperature .................................–65°C to +150°C Output Current into Outputs (LOW)............................. 20 mA Ambient Temperature with Static Discharge Voltage ......................
Inhaltszusammenfassung zur Seite Nr. 3
CY7C199 [3] Electrical Characteristics Over the Operating Range (continued) 7C199-20 7C199-25 7C199-35 7C199-45 Parameter Description Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit V Output HIGH V = Min., I =–4.0 mA 2.4 2.4 2.4 2.4 V OH CC OH Voltage V Output LOW V = Min., I =8.0 mA 0.4 0.4 0.4 0.4 V OL CC OL Voltage V Input HIGH 2.2 V 2.2 V 2.2 V 2.2 V V IH CC CC CC CC Voltage +0.3V +0.3V +0.3V +0.3V V Input LOW –0.5 0.8 -0.5 0.8 -0.5 0.8 -0.5 0.8 V IL Voltage I Input Load GND
Inhaltszusammenfassung zur Seite Nr. 4
CY7C199 [5] AC Test Loads and Waveforms R1 481Ω R1 481Ω 5V 5V ALL INPUT PULSES OUTPUT OUTPUT 3.0V 90% 90% 10% 10% R2 R2 30 pF 5pF GND 255 Ω 255Ω ≤t ≤t r r INCLUDING INCLUDING JIG AND JIG AND C199–5 SCOPE SCOPE C199–6 (a) (b) Equivalent to: THÉVE NIN EQUIVALENT 167 Ω OUTPUT 1.73V Data Retention Characteristics Over the Operating Range (L version only) [6] Parameter Description Conditions Min. Max. Unit V V for Data Retention 2.0 V DR CC I Data Retention Current Com’l V = V = 2.0V, µ A CCDR CC
Inhaltszusammenfassung zur Seite Nr. 5
CY7C199 [3, 7] Switching Characteristics Over the Operating Range 7C199-8 7C199-10 7C199-12 7C199-15 Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit READ CYCLE t Read Cycle Time 8 10 12 15 ns RC t Address to Data Valid 8 101215ns AA t Data Hold from Address Change 3 33 3 ns OHA t CE LOW to Data Valid 8 101215ns ACE t OE LOW to Data Valid 4.5 5 5 7 ns DOE [8] t OE LOW to Low Z 0 00 0 ns LZOE [8, 9] t OE HIGH to High Z 5557ns HZOE [8] t CE LOW to Low Z 3 33 3 ns LZCE [8,9] t C
Inhaltszusammenfassung zur Seite Nr. 6
CY7C199 [3,7] Switching Characteristics Over the Operating Range (continued) 7C199-20 7C199-25 7C199-35 7C199-45 Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit READ CYCLE t Read Cycle Time 20 25 35 45 ns RC t Address to Data Valid 20 25 35 45 ns AA t Data Hold from Address 33 3 3 ns OHA Change t CE LOW to Data Valid 20 25 35 45 ns ACE t OE LOW to Data Valid 9 10 16 16 ns DOE [8] t OE LOW to Low Z 00 0 0 ns LZOE [8, 9] t OE HIGH to High Z 911 15 15ns HZOE [8] t CE LOW to Low
Inhaltszusammenfassung zur Seite Nr. 7
CY7C199 Switching Waveforms (continued) [13, 14] Read Cycle No. 2 t RC CE t ACE OE t HZOE t DOE t HZCE t LZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA OUT DATA VALID t LZCE t PD t PU V CC ICC SUPPLY 50% 50% CURRENT ISB C199–9 [10, 15, 16] Write Cycle No. 1 (WE Controlled) t WC ADDRESS CE t t AW HA t t SA PWE WE OE t SD t HD DATA VALID DATA I/O IN t HZOE C199–10 [10, 15, 16] Write Cycle No. 2 (CE Controlled) t WC ADDRESS t CE SCE t SA t t AW HA WE t t SD HD DATA I/O DATA VALID IN C199–11 Notes: 14.
Inhaltszusammenfassung zur Seite Nr. 8
CY7C199 Switching Waveforms (continued) [11, 16] Write Cycle No. 3 (WE Controlled OE LOW) t WC ADDRESS CE t t AW HA t SA WE t t SD HD DATA I/O DATA VALID IN t t LZWE HZWE C199–12 Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE vs. OUTPUT VOLTAGE VOLTAGE vs. SUPPLY 1.4 120 1.4 I CC 1.2 1.2 100 I CC 1.0 1.0 80 0.8 0.8 V =5.0V CC 60 T =25°C A 0.6 0.6 V =5.0V IN T =25°C A 40 V =5.0V 0.4 CC 0.4 V =5.0V IN 20 0.2 0.2
Inhaltszusammenfassung zur Seite Nr. 9
CY7C199 Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE NORMALIZED I vs. CYCLETIME vs. SUPPLY VOLTAGE vs. OUTPUT LOADING CC 3.0 30.0 1.25 2.5 25.0 V =5.0V CC T =25°C A 1.00 2.0 20.0 V =0.5V IN 1.5 15.0 0.75 V =4.5V 1.0 10.0 CC T =25°C A 0.5 5.0 0.0 0.50 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0 200 400 600 800 1000 10 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) Truth Table CE WE OE Inputs/Outputs Mode Power H X X High Z Deselect/Powe
Inhaltszusammenfassung zur Seite Nr. 10
CY7C199 Ordering Information (continued) Speed Package Operating (ns) Ordering Code Name Package Type Range 15 CY7C199-15PC P21 28-Lead (300-Mil) Molded DIP Commercial CY7C199-15VC V21 28-Lead Molded SOJ CY7C199-15ZC Z28 28-Lead Thin Small Outline Package CY7C199L-15PC P21 28-Lead (300-Mil) Molded DIP CY7C199L-15VC V21 28-Lead Molded SOJ CY7C199L-15ZC Z28 28-Lead Thin Small Outline Package CY7C199-15VI V21 28-Lead Molded SOJ Industrial CY7C199-15ZI Z28 28-Lead Thin Small Outline Package CY7C19
Inhaltszusammenfassung zur Seite Nr. 11
CY7C199 MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameter Subgroups V 1, 2, 3 OH V 1, 2, 3 OL V 1, 2, 3 IH V Max. 1, 2, 3 IL I 1, 2, 3 IX I 1, 2, 3 OZ I 1, 2, 3 CC I 1, 2, 3 SB1 I 1, 2, 3 SB2 Switching Characteristics Parameter Subgroups READ CYCLE t 7, 8, 9, 10, 11 RC t 7, 8, 9, 10, 11 AA t 7, 8, 9, 10, 11 OHA t 7, 8, 9, 10, 11 ACE t 7, 8, 9, 10, 11 DOE WRITE CYCLE t 7, 8, 9, 10, 11 WC t 7, 8, 9, 10, 11 AA t 7, 8, 9, 10, 11 AW t 7, 8, 9, 10, 11 HA t 7, 8, 9, 10, 11
Inhaltszusammenfassung zur Seite Nr. 12
CY7C199 Package Diagrams 28-Lead (300-Mil) CerDIP D22 MIL-STD-1835 D-15 Config. A 51-80032 Document #: 38-05160 Rev. ** Page 12 of 16
Inhaltszusammenfassung zur Seite Nr. 13
CY7C199 Package Diagrams (continued) 28-Pin Rectangular Leadless Chip Carrier L54 MIL-STD-1835 C-11A 51-80067 28-Lead (300-Mil) Molded DIP P21 51-85014-B Document #: 38-05160 Rev. ** Page 13 of 16
Inhaltszusammenfassung zur Seite Nr. 14
CY7C199 Package Diagrams (continued) 28-Lead (300-Mil) Molded SOIC S21 51-85026-A 28-Lead (300-Mil) Molded SOJ V21 51-85031-B Document #: 38-05160 Rev. ** Page 14 of 16
Inhaltszusammenfassung zur Seite Nr. 15
CY7C199 Package Diagrams (continued) 28-Lead Thin Small Outline Package Z28 51-85071-F Document #: 38-05160 Rev. ** Page 15 of 16 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not
Inhaltszusammenfassung zur Seite Nr. 16
CY7C199 Document Title: CY7C199 32K x 8 Static RAM Document Number: 38-05160 Issue Orig. of REV. ECN NO. Date Change Description of Change ** 109971 10/28/01 SZV Change from Spec number: 38-00239 to 38-05160 Document #: 38-05160 Rev. ** Page 16 of 16
